Qhalid Fareed

Person

Columbia, SC, US

People

Patents Grantslast 30 patents

Information Patent Grant
Electronic device with gallium nitride transistors and method of ma...
- Patent number 12,142,639
- Issue date Nov 12, 2024
- Texas Instruments Incorporated
- Qhalid R S Fareed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monolithic integration of high and low-side GaN FETs with screening...
- Patent number 11,888,027
- Issue date Jan 30, 2024
- Texas Instruments Incorporated
- Dong Seup Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device with gallium nitride transistors and method of ma...
- Patent number 11,742,390
- Issue date Aug 29, 2023
- Texas Instruments Incorporated
- Qhalid R S Fareed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Normally off III nitride transistor
- Patent number 11,011,515
- Issue date May 18, 2021
- Texas Instruments Incorporated
- Qhalid Fareed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating non-etch gas cooled epitaxial stack for group...
- Patent number 10,529,561
- Issue date Jan 7, 2020
- Texas Instruments Incorporated
- Asad Mahmood Haider
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ultraviolet light emitting devices and methods of fabrication
- Patent number 9,985,177
- Issue date May 29, 2018
- University of South Carolina
- M. Asif Khan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Buffer stack for group IIIA-N devices
- Patent number 9,847,223
- Issue date Dec 19, 2017
- Texas Instruments Incorporated
- Qhalid Fareed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Buffer stack for group IIIA-N devices
- Patent number 9,590,086
- Issue date Mar 7, 2017
- Texas Instruments Incorporated
- Qhalid Fareed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selectively area regrown III-nitride high electron mobility transistor
- Patent number 9,343,563
- Issue date May 17, 2016
- University of South Carolina
- Asif Khan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Buffer stack for group IIIA-N devices
- Patent number 9,337,023
- Issue date May 10, 2016
- Texas Instruments Incorporated
- Qhalid Fareed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Utlraviolet light emitting devices and methods of fabrication
- Patent number 9,331,240
- Issue date May 3, 2016
- University of South Carolina
- M. Asif Khan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High power ultraviolet light emitting diode with superlattice
- Patent number 9,142,714
- Issue date Sep 22, 2015
- Nitek, Inc.
- Vinod Adivarahan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selectively area regrown III-nitride high electron mobility transistor
- Patent number 8,796,097
- Issue date Aug 5, 2014
- University of South Carolina
- Asif Khan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ultraviolet light emitting diode with AC voltage operation
- Patent number 8,698,191
- Issue date Apr 15, 2014
- Nitek, Inc.
- Asif Khan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to increase breakdown voltage of semiconductor devices
- Patent number 8,692,293
- Issue date Apr 8, 2014
- University of South Carolina
- M. Asif Khan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High power ultraviolet light sources and method of fabricating the...
- Patent number 8,680,551
- Issue date Mar 25, 2014
- Nitek, Inc.
- Vinod Adivarahan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ultraviolet light emitting diode/laser diode with nested superlattice
- Patent number 8,563,995
- Issue date Oct 22, 2013
- Nitek, Inc.
- Asif Khan
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Multilayer barrier III-nitride transistor for high voltage electronics
- Patent number 8,541,817
- Issue date Sep 24, 2013
- Nitek, Inc.
- Qhalid Fareed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ultraviolet light emitting diode with AC voltage operation
- Patent number 8,507,941
- Issue date Aug 13, 2013
- Nitek, Inc.
- Asif Khan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low resistance ultraviolet light emitting device and method of fabr...
- Patent number 8,415,654
- Issue date Apr 9, 2013
- Nitek, Inc.
- Asif Khan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Efficient thermal management and packaging for group III nitride ba...
- Patent number 8,354,687
- Issue date Jan 15, 2013
- Nitek, Inc.
- Vinod Adivarahan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to increase breakdown voltage of semiconductor devices
- Patent number 8,318,562
- Issue date Nov 27, 2012
- University of South Carolina
- M. Asif Khan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of growing nitride-based film using varying pulses
- Patent number 8,227,322
- Issue date Jul 24, 2012
- Sensor Electronic Technology, Inc.
- Qhalid Fareed
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Mixed source growth apparatus and method of fabricating III-nitride...
- Patent number 8,222,669
- Issue date Jul 17, 2012
- Nitek, Inc.
- Asif Khan
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Etching a nitride-based heterostructure
- Patent number 7,429,534
- Issue date Sep 30, 2008
- Sensor Electronic Technology, Inc.
- Remigijus Gaska
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of growing nitride-based film using varying pulses
- Patent number 7,192,849
- Issue date Mar 20, 2007
- Sensor Electronic Technology, Inc.
- Qhalid Fareed
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Heterostructure semiconductor device
- Patent number 6,841,809
- Issue date Jan 11, 2005
- Sensor Electronic Technology, Inc.
- Qhalid Fareed
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
MONOLITHIC INTEGRATION OF HIGH AND LOW-SIDE GAN FETS WITH SCREENING...
- Publication number 20240120383
- Publication date Apr 11, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Dong Seup Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GAN DEVICE WITH EXTENDED DRAIN CONTACT
- Publication number 20230411461
- Publication date Dec 21, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Dong Seup Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC DEVICE WITH GALLIUM NITRIDE TRANSISTORS AND METHOD OF MA...
- Publication number 20230343829
- Publication date Oct 26, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Qhalid RS Fareed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MONOLITHIC INTEGRATION OF HIGH AND LOW-SIDE GAN FETS WITH SCREENING...
- Publication number 20230197784
- Publication date Jun 22, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Dong Seup Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
APPARATUS AND METHOD TO CONTROL THRESHOLD VOLTAGE AND GATE LEAKAGE...
- Publication number 20230134698
- Publication date May 4, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Jungwoo Joh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
P TYPE GALLIUM NITRIDE CONFORMAL EPITAXIAL STRUCTURE OVER THICK BUF...
- Publication number 20220190148
- Publication date Jun 16, 2022
- TEXAS INSTRUMENTS INCORPORATED
- Tatsuya Tominari
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC DEVICE WITH GALLIUM NITRIDE TRANSISTORS AND METHOD OF MA...
- Publication number 20220140087
- Publication date May 5, 2022
- TEXAS INSTRUMENTS INCORPORATED
- Qhalid RS Fareed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC DEVICE WITH ENHANCEMENT MODE GALLIUM NITRIDE TRANSISTOR,...
- Publication number 20220130988
- Publication date Apr 28, 2022
- TEXAS INSTRUMENTS INCORPORATED
- Qhalid RS Fareed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NORMALLY OFF III NITRIDE TRANSISTOR
- Publication number 20210242200
- Publication date Aug 5, 2021
- TEXAS INSTRUMENTS INCORPORATED
- Qhalid Fareed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR TRANSISTOR EPITAXIAL STACK FABRICATION
- Publication number 20190288089
- Publication date Sep 19, 2019
- TEXAS INSTRUMENTS INCORPORATED
- QHALID FAREED
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR TRANSISTOR EPITAXIAL STACK FABRICATION
- Publication number 20190181240
- Publication date Jun 13, 2019
- TEXAS INSTRUMENTS INCORPORATED
- QHALID FAREED
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NORMALLY OFF III NITRIDE TRANSISTOR
- Publication number 20180277535
- Publication date Sep 27, 2018
- TEXAS INSTRUMENTS INCORPORATED
- Qhalid Fareed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-ETCH GAS COOLED EPITAXIAL STACK FOR GROUP IIIA-N DEVICES
- Publication number 20170186859
- Publication date Jun 29, 2017
- TEXAS INSTRUMENTS INCORPORATED
- Asad Mahmood HAIDER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BUFFER STACK FOR GROUP IIIA-N DEVICES
- Publication number 20170133221
- Publication date May 11, 2017
- TEXAS INSTRUMENTS INCORPORATED
- Qhalid FAREED
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NORMALLY OFF III-NITRIDE TRANSISTOR
- Publication number 20160293596
- Publication date Oct 6, 2016
- TEXAS INSTRUMENTS INCORPORATED
- Qhalid Fareed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ULTRAVIOLET LIGHT EMITTING DEVICES AND METHODS OF FABRICATION
- Publication number 20160276533
- Publication date Sep 22, 2016
- University of South Carolina
- M. Asif Khan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BUFFER STACK FOR GROUP IIIA-N DEVICES
- Publication number 20160218202
- Publication date Jul 28, 2016
- TEXAS INSTRUMENTS INCORPORATED
- Qhalid FAREED
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Selectively Area Regrown III-Nitride High Electron Mobility Transistor
- Publication number 20150001550
- Publication date Jan 1, 2015
- Asif Khan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Selectively Area Regrown III-Nitride High Electron Mobility Transistor
- Publication number 20130313613
- Publication date Nov 28, 2013
- Asif Khan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ULTRAVIOLET LIGHT EMITTING DIODE WITH AC VOLTAGE OPERATION
- Publication number 20130256631
- Publication date Oct 3, 2013
- ASIF KHAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Novel Method to Increase Breakdown Voltage of Semiconductor Devices
- Publication number 20130056796
- Publication date Mar 7, 2013
- University of South Carolina
- M. Asif Khan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STABLE HIGH POWER ULTRAVIOLET LIGHT EMITTING DIODE
- Publication number 20120145994
- Publication date Jun 14, 2012
- NITEK, INC
- Vinod ADIVARAHAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPERLATTICE FREE ULTRAVIOLET EMITTER
- Publication number 20110220867
- Publication date Sep 15, 2011
- Asif Khan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MIXED SOURCE GROWTH APPARATUS AND METHOD OF FABRICATING III-NITRIDE...
- Publication number 20110127571
- Publication date Jun 2, 2011
- NITEK, INC
- Asif Khan
- C30 - CRYSTAL GROWTH
Information Patent Application
MULTILAYER BARRIER III-NITRIDE TRANSISTOR FOR HIGH VOLTAGE ELECTRONICS
- Publication number 20110108887
- Publication date May 12, 2011
- Nitek, Inc.
- Qhalid Fareed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ULTRAVIOLET LIGHT EMITTING DIODE WITH AC VOLTAGE OPERATION
- Publication number 20110073838
- Publication date Mar 31, 2011
- Asif Khan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ULTRAVIOLET LIGHT EMITTING DIODE/LASER DIODE WITH NESTED SUPERLATTICE
- Publication number 20110017976
- Publication date Jan 27, 2011
- NITEK, INC
- Asif Khan
- B82 - NANO-TECHNOLOGY
Information Patent Application
LOW RESISTANCE ULTRAVIOLET LIGHT EMITTING DEVICE AND METHOD OF FABR...
- Publication number 20110012089
- Publication date Jan 20, 2011
- Asif Khan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
UTLRAVIOLET LIGHT EMITTING DEVICES AND METHODS OF FABRICATION
- Publication number 20100032647
- Publication date Feb 11, 2010
- University of South Carolina
- M. Asif Khan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Novel Method to Increase Breakdown Voltage of Semiconductor Devices
- Publication number 20090090984
- Publication date Apr 9, 2009
- M. Asif Khan
- H01 - BASIC ELECTRIC ELEMENTS

Qhalid Fareed

Person

Patents Grantslast 30 patents

Electronic device with gallium nitride transistors and method of ma...

Monolithic integration of high and low-side GaN FETs with screening...

Electronic device with gallium nitride transistors and method of ma...

Normally off III nitride transistor

Method of fabricating non-etch gas cooled epitaxial stack for group...

Ultraviolet light emitting devices and methods of fabrication

Buffer stack for group IIIA-N devices

Buffer stack for group IIIA-N devices

Selectively area regrown III-nitride high electron mobility transistor

Buffer stack for group IIIA-N devices

Utlraviolet light emitting devices and methods of fabrication

High power ultraviolet light emitting diode with superlattice

Selectively area regrown III-nitride high electron mobility transistor

Ultraviolet light emitting diode with AC voltage operation

Method to increase breakdown voltage of semiconductor devices

High power ultraviolet light sources and method of fabricating the...

Ultraviolet light emitting diode/laser diode with nested superlattice

Multilayer barrier III-nitride transistor for high voltage electronics

Ultraviolet light emitting diode with AC voltage operation

Low resistance ultraviolet light emitting device and method of fabr...

Efficient thermal management and packaging for group III nitride ba...

Method to increase breakdown voltage of semiconductor devices

Methods of growing nitride-based film using varying pulses

Mixed source growth apparatus and method of fabricating III-nitride...

Etching a nitride-based heterostructure

Methods of growing nitride-based film using varying pulses

Heterostructure semiconductor device

Patents Applicationslast 30 patents

MONOLITHIC INTEGRATION OF HIGH AND LOW-SIDE GAN FETS WITH SCREENING...

GAN DEVICE WITH EXTENDED DRAIN CONTACT

ELECTRONIC DEVICE WITH GALLIUM NITRIDE TRANSISTORS AND METHOD OF MA...

MONOLITHIC INTEGRATION OF HIGH AND LOW-SIDE GAN FETS WITH SCREENING...

APPARATUS AND METHOD TO CONTROL THRESHOLD VOLTAGE AND GATE LEAKAGE...

P TYPE GALLIUM NITRIDE CONFORMAL EPITAXIAL STRUCTURE OVER THICK BUF...

ELECTRONIC DEVICE WITH GALLIUM NITRIDE TRANSISTORS AND METHOD OF MA...

ELECTRONIC DEVICE WITH ENHANCEMENT MODE GALLIUM NITRIDE TRANSISTOR,...

NORMALLY OFF III NITRIDE TRANSISTOR

METHODS FOR TRANSISTOR EPITAXIAL STACK FABRICATION

METHODS FOR TRANSISTOR EPITAXIAL STACK FABRICATION

NORMALLY OFF III NITRIDE TRANSISTOR

NON-ETCH GAS COOLED EPITAXIAL STACK FOR GROUP IIIA-N DEVICES

BUFFER STACK FOR GROUP IIIA-N DEVICES

NORMALLY OFF III-NITRIDE TRANSISTOR

ULTRAVIOLET LIGHT EMITTING DEVICES AND METHODS OF FABRICATION

BUFFER STACK FOR GROUP IIIA-N DEVICES

Selectively Area Regrown III-Nitride High Electron Mobility Transistor

Selectively Area Regrown III-Nitride High Electron Mobility Transistor

ULTRAVIOLET LIGHT EMITTING DIODE WITH AC VOLTAGE OPERATION

Novel Method to Increase Breakdown Voltage of Semiconductor Devices

STABLE HIGH POWER ULTRAVIOLET LIGHT EMITTING DIODE

SUPERLATTICE FREE ULTRAVIOLET EMITTER

MIXED SOURCE GROWTH APPARATUS AND METHOD OF FABRICATING III-NITRIDE...

MULTILAYER BARRIER III-NITRIDE TRANSISTOR FOR HIGH VOLTAGE ELECTRONICS

ULTRAVIOLET LIGHT EMITTING DIODE WITH AC VOLTAGE OPERATION

ULTRAVIOLET LIGHT EMITTING DIODE/LASER DIODE WITH NESTED SUPERLATTICE

LOW RESISTANCE ULTRAVIOLET LIGHT EMITTING DEVICE AND METHOD OF FABR...

UTLRAVIOLET LIGHT EMITTING DEVICES AND METHODS OF FABRICATION

Novel Method to Increase Breakdown Voltage of Semiconductor Devices