Qian FAN

Person

Suzhou, CN

People

Patents Grantslast 30 patents

Information Patent Grant
Vertical cavity surface emitting laser and corresponding fabricatin...
- Patent number 12,015,246
- Issue date Jun 18, 2024
- SUZHOU HANHUA SEMICONDUCTOR CO., LTD.
- Qian Fan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated enhancement/depletion mode HEMT and method for manufactu...
- Patent number 11,532,739
- Issue date Dec 20, 2022
- SUZHOU HAN HUA SEMICONDUCTOR CO., LTD.
- Xianfeng Ni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 11,056,572
- Issue date Jul 6, 2021
- SUZHOU HAN HUA SEMICONDUCTOR CO., LTD.
- Xianfeng Ni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of group III-nitride semiconductor devices
- Patent number 11,049,718
- Issue date Jun 29, 2021
- SUZHOU HAN HUA SEMICONDUCTOR CO., LTD.
- Xian-Feng Ni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated enhancement/depletion mode HEMT
- Patent number 11,049,952
- Issue date Jun 29, 2021
- SUZHOU HAN HUA SEMICONDUCTOR CO., LTD.
- Xianfeng Ni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming III-nitride semiconductor device and the III-nit...
- Patent number 11,049,943
- Issue date Jun 29, 2021
- SUZHOU HAN HUA SEMICONDUCTOR CO., LTD.
- Xian-Feng Ni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating high-quality and high-uniformity III-nitride...
- Patent number 10,879,063
- Issue date Dec 29, 2020
- SUZHOU HAN HUA SEMICONDUCTOR CO., LTD.
- Xianfeng Ni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated enhancement/depletion mode HEMT and method for manufactu...
- Patent number 10,784,366
- Issue date Sep 22, 2020
- Xianfeng Ni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing an integrated enhancement/depletion mode HEMT
- Patent number 10,777,653
- Issue date Sep 15, 2020
- SUZHOU HAN HUA SEMICONDUCTOR CO., LTD.
- Xianfeng Ni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing nitrogen-face polarity gallium nitride epi...
- Patent number 10,777,654
- Issue date Sep 15, 2020
- SUZHOU HAN HUA SEMICONDUCTOR CO., LTD.
- Xianfeng Ni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for recovering carbon-face-polarized silicon carbide substrate
- Patent number 10,763,174
- Issue date Sep 1, 2020
- SUZHOU HAN HUA SEMICONDUCTOR CO., LTD.
- Xianfeng Ni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III-nitride semiconductor device and corresponding fabricatin...
- Patent number 10,749,020
- Issue date Aug 18, 2020
- SUZHOU HAN HUA SEMICONDUCTOR CO., LTD.
- Xian-Feng Ni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating semiconductor structure
- Patent number 10,727,053
- Issue date Jul 28, 2020
- SUZHOU HAN HUA SEMICONDUCTOR CO., LTD.
- Xianfeng Ni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 10,622,456
- Issue date Apr 14, 2020
- SUZHOU HANHUA SEMICONDUCTOR CO., LTD.
- Xianfeng Ni
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
MICROLENS ARRAYS AND METHOD FOR FABRICATING THE SAME
- Publication number 20240319411
- Publication date Sep 26, 2024
- SUZHOU HAN HUA SEMICONDUCTOR CO., LTD.
- Qian Fan
- B29 - WORKING OF PLASTICS WORKING OF SUBSTANCES IN A PLASTIC STATE, IN GENERAL
Information Patent Application
VERTICAL CAVITY SURFACE EMITTING LASER AND CORRESPONDING FABRICATIN...
- Publication number 20210384705
- Publication date Dec 9, 2021
- SUZHOU HANHUA SEMICONDUCTOR CO., LTD.
- Qian Fan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED ENHANCEMENT/DEPLETION MODE HEMT AND METHOD FOR MANUFACTU...
- Publication number 20200381543
- Publication date Dec 3, 2020
- SUZHOU HAN HUA SEMICONDUCTOR CO., LTD.
- Xianfeng Ni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED ENHANCEMENT/DEPLETION MODE HEMT AND METHOD FOR MANUFACTU...
- Publication number 20200381533
- Publication date Dec 3, 2020
- SUZHOU HAN HUA SEMICONDUCTOR CO., LTD.
- Xianfeng Ni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20200203506
- Publication date Jun 25, 2020
- SUZHOU HAN HUA SEMICONDUCTOR CO., LTD.
- Xianfeng Ni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Forming III-Nitride Semiconductor Device and the III-Nit...
- Publication number 20200052076
- Publication date Feb 13, 2020
- Suzhou Han Hua Semiconductor Co.,Ltd
- Xian-Feng Ni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Group III-Nitride Semiconductor device and Corresponding Fabricatin...
- Publication number 20200052102
- Publication date Feb 13, 2020
- Suzhou Han Hua Semiconductor Co.,Ltd
- Xian-Feng Ni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR RECOVERING CARBON-FACE-POLARIZED SILICON CARBIDE SUBSTRATE
- Publication number 20190393090
- Publication date Dec 26, 2019
- Suzhou Han Hua Semiconductor Co.,Ltd
- Xianfeng NI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fabrication of Group III-Nitride Semiconductor devices
- Publication number 20190371598
- Publication date Dec 5, 2019
- Suzhou Han Hua Semiconductor Co.,Ltd
- Xian-Feng Ni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING SEMICONDUCTOR STRUCTURE
- Publication number 20190333766
- Publication date Oct 31, 2019
- Suzhou Han Hua Semiconductor Co.,Ltd
- Xianfeng NI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for fabricating High-quality and high-uniformity III-nitride...
- Publication number 20190304772
- Publication date Oct 3, 2019
- Suzhou Han Hua Semiconductor Co.,Ltd
- Xianfeng NI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED ENHANCEMENT/DEPLETION MODE HEMT AND METHOD FOR MANUFACTU...
- Publication number 20190267469
- Publication date Aug 29, 2019
- Suzhou Han Hua Semiconductor Co.,Ltd
- Xianfeng NI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACURING THE SAME
- Publication number 20190267468
- Publication date Aug 29, 2019
- Suzhou Han Hua Semiconductor Co.,Ltd
- Xianfeng NI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACURING NITROGEN-FACE POLARITY GALLIUM NITRIDE EPIT...
- Publication number 20190267470
- Publication date Aug 29, 2019
- Suzhou Han Hua Semiconductor Co.,Ltd
- Xianfeng NI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED ENHANCEMENT/DEPLETION MODE HEMT AND METHOD FOR MANUFACTU...
- Publication number 20190259865
- Publication date Aug 22, 2019
- Suzhou Han Hua Semiconductor Co.,Ltd
- Xianfeng NI
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Vertical cavity surface emitting laser and corresponding fabricatin...

Integrated enhancement/depletion mode HEMT and method for manufactu...

Semiconductor device and method for manufacturing the same

Fabrication of group III-nitride semiconductor devices

Integrated enhancement/depletion mode HEMT

Method for forming III-nitride semiconductor device and the III-nit...

Method for fabricating high-quality and high-uniformity III-nitride...

Integrated enhancement/depletion mode HEMT and method for manufactu...

Method for manufacturing an integrated enhancement/depletion mode HEMT

Method for manufacturing nitrogen-face polarity gallium nitride epi...

Method for recovering carbon-face-polarized silicon carbide substrate

Group III-nitride semiconductor device and corresponding fabricatin...

Method of fabricating semiconductor structure

Semiconductor device and method for manufacturing the same

Patents Applicationslast 30 patents

MICROLENS ARRAYS AND METHOD FOR FABRICATING THE SAME

VERTICAL CAVITY SURFACE EMITTING LASER AND CORRESPONDING FABRICATIN...

INTEGRATED ENHANCEMENT/DEPLETION MODE HEMT AND METHOD FOR MANUFACTU...

INTEGRATED ENHANCEMENT/DEPLETION MODE HEMT AND METHOD FOR MANUFACTU...

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

Method for Forming III-Nitride Semiconductor Device and the III-Nit...

Group III-Nitride Semiconductor device and Corresponding Fabricatin...

METHOD FOR RECOVERING CARBON-FACE-POLARIZED SILICON CARBIDE SUBSTRATE

Fabrication of Group III-Nitride Semiconductor devices

METHOD OF FABRICATING SEMICONDUCTOR STRUCTURE

Method for fabricating High-quality and high-uniformity III-nitride...

INTEGRATED ENHANCEMENT/DEPLETION MODE HEMT AND METHOD FOR MANUFACTU...

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACURING THE SAME

METHOD FOR MANUFACURING NITROGEN-FACE POLARITY GALLIUM NITRIDE EPIT...

INTEGRATED ENHANCEMENT/DEPLETION MODE HEMT AND METHOD FOR MANUFACTU...