Qian Tao

Person

Wuhan, CN

People

Patents Grantslast 30 patents

Information Patent Grant
Staircase structure for memory device
- Patent number 12,137,558
- Issue date Nov 5, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell structure of a three-dimensional memory device
- Patent number 12,063,780
- Issue date Aug 13, 2024
- Yangtze Memory Technologies Co., Ltd.
- Xiaowang Dai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Staircase structure for memory device
- Patent number 12,010,838
- Issue date Jun 11, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory devices and fabricating methods thereof
- Patent number 11,991,880
- Issue date May 21, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multiple-stack three-dimensional memory device and fabrication meth...
- Patent number 11,968,832
- Issue date Apr 23, 2024
- Yangtze Memory Technologies Co., Ltd.
- Jun Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming channel hole plug of three-dimensional memory de...
- Patent number 11,943,928
- Issue date Mar 26, 2024
- Yangtze Memory Technologies Co., Ltd.
- Li Hong Xiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical memory devices
- Patent number 11,889,686
- Issue date Jan 30, 2024
- Yangtze Memory Technologies Co., Ltd.
- Miao Shen
Information Patent Grant
Three-dimensional memory devices and methods for forming the same
- Patent number 11,805,646
- Issue date Oct 31, 2023
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabrication thereof a multi-level vertical memory device...
- Patent number 11,805,643
- Issue date Oct 31, 2023
- Yangtze Memory Technologies Co., Ltd.
- Ruo Fang Zhang
Information Patent Grant
Three-dimensional memory devices having a plurality of NAND strings...
- Patent number 11,699,657
- Issue date Jul 11, 2023
- Yangtze Memory Technologies Co., Ltd.
- Jifeng Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-level vertical memory device including inter-level channel co...
- Patent number 11,502,094
- Issue date Nov 15, 2022
- Yangtze Memory Technologies Co., Ltd.
- Ruo Fang Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory devices having a plurality of NAND strings
- Patent number 11,462,474
- Issue date Oct 4, 2022
- Yangtze Memory Technologies Co., Ltd.
- Jifeng Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device and forming method thereof
- Patent number 11,380,701
- Issue date Jul 5, 2022
- Yangtze Memory Technologies Co., Ltd.
- Yue Qiang Pu
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for improving channel hole uniformity of a three-dimensional...
- Patent number 11,329,061
- Issue date May 10, 2022
- Yangtze Memory Technologies Co., Ltd.
- Li Hong Xiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming channel hole plug of three-dimensional memory de...
- Patent number 11,309,327
- Issue date Apr 19, 2022
- Yangtze Memory Technologies Co., Ltd.
- Li Hong Xiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device and forming method thereof
- Patent number 11,271,004
- Issue date Mar 8, 2022
- Yangtze Memory Technologies Co., Ltd.
- Yue Qiang Pu
- G11 - INFORMATION STORAGE
Information Patent Grant
Source structure of three-dimensional memory device and method for...
- Patent number 11,264,397
- Issue date Mar 1, 2022
- Yangtze Memory Technologies Co., Ltd.
- Yushi Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory devices and methods for forming the same
- Patent number 11,211,397
- Issue date Dec 28, 2021
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device and forming method thereof
- Patent number 11,211,393
- Issue date Dec 28, 2021
- Yangtze Memory Technologies Co., Ltd.
- Yue Qiang Pu
- G11 - INFORMATION STORAGE
Information Patent Grant
Staircase structure for memory device
- Patent number 11,145,666
- Issue date Oct 12, 2021
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell structure of a three-dimensional memory device
- Patent number 11,133,325
- Issue date Sep 28, 2021
- Yangtze Memory Technologies Co., Ltd.
- Xiaowang Dai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory devices having a plurality of NAND strings
- Patent number 11,031,333
- Issue date Jun 8, 2021
- Yangtze Memory Technologies Co., Ltd.
- Jifeng Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Through array contact (TAC) for three-dimensional memory devices
- Patent number 10,937,806
- Issue date Mar 2, 2021
- Yangtze Memory Technologies Co., Ltd.
- Qian Tao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device and forming method thereof
- Patent number 10,910,390
- Issue date Feb 2, 2021
- Yangtze Memory Technologies Co., Ltd.
- Yue Qiang Pu
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-dimensional memory devices and fabricating methods thereof
- Patent number 10,892,274
- Issue date Jan 12, 2021
- Yangtze Memory Technologies Co., Ltd.
- Yushi Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multiple-stack three-dimensional memory device and fabrication meth...
- Patent number 10,868,031
- Issue date Dec 15, 2020
- Yangtze Memory Technologies Co., Ltd.
- Jun Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell structure of a three-dimensional memory device
- Patent number 10,847,528
- Issue date Nov 24, 2020
- Yangtze Memory Technologies Co., Ltd.
- Xiaowang Dai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory devices and fabricating methods thereof
- Patent number 10,804,287
- Issue date Oct 13, 2020
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source structure of three-dimensional memory device and method for...
- Patent number 10,804,279
- Issue date Oct 13, 2020
- Yangtze Memory Technologies Co., Ltd.
- Yushi Hu
- G11 - INFORMATION STORAGE
Information Patent Grant
Wafer flatness control using backside compensation structure
- Patent number 10,763,099
- Issue date Sep 1, 2020
- Yangtze Memory Technologies Co., Ltd.
- Xiaowang Dai
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
STAIRCASE STRUCTURE FOR MEMORY DEVICE
- Publication number 20250031366
- Publication date Jan 23, 2025
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATING METHODS THEREOF
- Publication number 20240292622
- Publication date Aug 29, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTIPLE-STACK THREE-DIMENSIONAL MEMORY DEVICE AND FABRICATION METH...
- Publication number 20240179911
- Publication date May 30, 2024
- Yangtze Memory Technologies Co., Ltd.
- Jun LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES AND METHODS FOR FORMING THE SAME
- Publication number 20230422504
- Publication date Dec 28, 2023
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STAIRCASE STRUCTURE FOR MEMORY DEVICE
- Publication number 20230084008
- Publication date Mar 16, 2023
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STAIRCASE STRUCTURE FOR MEMORY DEVICE
- Publication number 20230083030
- Publication date Mar 16, 2023
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING CHANNEL HOLE PLUG OF THREE-DIMENSIONAL MEMORY DE...
- Publication number 20220238556
- Publication date Jul 28, 2022
- Yangtze Memory Technologies Co., Ltd.
- Li Hong XIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL MEMORY DEVICES
- Publication number 20210408026
- Publication date Dec 30, 2021
- Yangtze Memory Technologies Co., Ltd.
- Miao Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATION THEREOF
- Publication number 20210398999
- Publication date Dec 23, 2021
- Yangtze Memory Technologies Co., Ltd.
- Ruo Fang ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELL STRUCTURE OF A THREE-DIMENSIONAL MEMORY DEVICE
- Publication number 20210399001
- Publication date Dec 23, 2021
- Yangtze Memory Technologies Co., Ltd.
- Xiaowang DAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES HAVING A PLURALITY OF NAND STRINGS
- Publication number 20210296341
- Publication date Sep 23, 2021
- Yangtze Memory Technologies Co., Ltd.
- Jifeng ZHU
- G11 - INFORMATION STORAGE
Information Patent Application
Three-Dimensional Memory Devices and Fabricating Methods Thereof
- Publication number 20210118905
- Publication date Apr 22, 2021
- Yangtze Memory Technologies Co., Ltd.
- Yushi HU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND FORMING METHOD THEREOF
- Publication number 20210118896
- Publication date Apr 22, 2021
- Yangtze Memory Technologies Co., Ltd.
- Yue Qiang PU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND FORMING METHOD THEREOF
- Publication number 20210104532
- Publication date Apr 8, 2021
- Yangtze Memory Technologies Co., Ltd.
- Yue Qiang PU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Three-Dimensional Memory Devices and Methods for Forming the Same
- Publication number 20210098491
- Publication date Apr 1, 2021
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND FORMING METHOD THEREOF
- Publication number 20210098481
- Publication date Apr 1, 2021
- Yangtze Memory Technologies Co., Ltd.
- Yue Qiang PU
- G11 - INFORMATION STORAGE
Information Patent Application
MULTIPLE-STACK THREE-DIMENSIONAL MEMORY DEVICE AND FABRICATION METH...
- Publication number 20210043651
- Publication date Feb 11, 2021
- Yangtze Memory Technologies Co., Ltd.
- Jun LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELL STRUCTURE OF A THREE-DIMENSIONAL MEMORY DEVICE
- Publication number 20210005625
- Publication date Jan 7, 2021
- Yangtze Memory Technologies Co., Ltd.
- Xiaowang DAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE AND METHOD FOR...
- Publication number 20210005621
- Publication date Jan 7, 2021
- Yangtze Memory Technologies Co., Ltd.
- Yushi HU
- G11 - INFORMATION STORAGE
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATING METHODS THEREOF
- Publication number 20200411547
- Publication date Dec 31, 2020
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STAIRCASE STRUCTURE FOR MEMORY DEVICE
- Publication number 20200295019
- Publication date Sep 17, 2020
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THROUGH ARRAY CONTACT (TAC) FOR THREE-DIMENSIONAL MEMORY DEVICES
- Publication number 20200266211
- Publication date Aug 20, 2020
- Yangtze Memory Technologies Co., Ltd.
- Qian TAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELL STRUCTURE OF A THREE-DIMENSIONAL MEMORY DEVICE
- Publication number 20200243553
- Publication date Jul 30, 2020
- Yangtze Memory Technologies Co., Ltd.
- Xiaowang DAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL MEMORY DEVICES
- Publication number 20200119031
- Publication date Apr 16, 2020
- Yangtze Memory Technologies Co., Ltd.
- Miao Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATION THEREOF
- Publication number 20200105778
- Publication date Apr 2, 2020
- Yangtze Memory Technologies Co., Ltd.
- Ruo Fang ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WAFER FLATNESS CONTROL USING BACKSIDE COMPENSATION STRUCTURE
- Publication number 20200058486
- Publication date Feb 20, 2020
- Yangtze Memory Technologies Co., Ltd.
- Xiaowang Dai
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Application
MULTIPLE-STACK THREE-DIMENSIONAL MEMORY DEVICE AND FABRICATION METH...
- Publication number 20200035699
- Publication date Jan 30, 2020
- Yangtze Memory Technologies Co., Ltd.
- Jun LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FORMING THREE-DIMENSIONAL MEMORY DEVICES
- Publication number 20200027892
- Publication date Jan 23, 2020
- Yangtze Memory Technologies Co., Ltd.
- Jifeng Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory Device and Forming Method Thereof
- Publication number 20190378853
- Publication date Dec 12, 2019
- Yangtze Memory Technologies Co., Ltd.
- Li Hong XIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING DUAL-DECK CHANNEL HOLE STRUCTURE OF THREE-DIMENS...
- Publication number 20190378849
- Publication date Dec 12, 2019
- Yangtze Memory Technologies Co., Ltd.
- Qian Tao
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Staircase structure for memory device

Memory cell structure of a three-dimensional memory device

Staircase structure for memory device

Three-dimensional memory devices and fabricating methods thereof

Multiple-stack three-dimensional memory device and fabrication meth...

Method for forming channel hole plug of three-dimensional memory de...

Vertical memory devices

Three-dimensional memory devices and methods for forming the same

Method of fabrication thereof a multi-level vertical memory device...

Three-dimensional memory devices having a plurality of NAND strings...

Multi-level vertical memory device including inter-level channel co...

Three-dimensional memory devices having a plurality of NAND strings

Memory device and forming method thereof

Method for improving channel hole uniformity of a three-dimensional...

Method for forming channel hole plug of three-dimensional memory de...

Memory device and forming method thereof

Source structure of three-dimensional memory device and method for...

Three-dimensional memory devices and methods for forming the same

Memory device and forming method thereof

Staircase structure for memory device

Memory cell structure of a three-dimensional memory device

Three-dimensional memory devices having a plurality of NAND strings

Through array contact (TAC) for three-dimensional memory devices

Memory device and forming method thereof

Three-dimensional memory devices and fabricating methods thereof

Multiple-stack three-dimensional memory device and fabrication meth...

Memory cell structure of a three-dimensional memory device

Three-dimensional memory devices and fabricating methods thereof

Source structure of three-dimensional memory device and method for...

Wafer flatness control using backside compensation structure

Patents Applicationslast 30 patents

STAIRCASE STRUCTURE FOR MEMORY DEVICE

THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATING METHODS THEREOF

MULTIPLE-STACK THREE-DIMENSIONAL MEMORY DEVICE AND FABRICATION METH...

THREE-DIMENSIONAL MEMORY DEVICES AND METHODS FOR FORMING THE SAME

STAIRCASE STRUCTURE FOR MEMORY DEVICE

STAIRCASE STRUCTURE FOR MEMORY DEVICE

METHOD FOR FORMING CHANNEL HOLE PLUG OF THREE-DIMENSIONAL MEMORY DE...

VERTICAL MEMORY DEVICES

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATION THEREOF

MEMORY CELL STRUCTURE OF A THREE-DIMENSIONAL MEMORY DEVICE

THREE-DIMENSIONAL MEMORY DEVICES HAVING A PLURALITY OF NAND STRINGS

Three-Dimensional Memory Devices and Fabricating Methods Thereof

MEMORY DEVICE AND FORMING METHOD THEREOF

MEMORY DEVICE AND FORMING METHOD THEREOF

Three-Dimensional Memory Devices and Methods for Forming the Same

MEMORY DEVICE AND FORMING METHOD THEREOF

MULTIPLE-STACK THREE-DIMENSIONAL MEMORY DEVICE AND FABRICATION METH...

MEMORY CELL STRUCTURE OF A THREE-DIMENSIONAL MEMORY DEVICE

SOURCE STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE AND METHOD FOR...

THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATING METHODS THEREOF

STAIRCASE STRUCTURE FOR MEMORY DEVICE

THROUGH ARRAY CONTACT (TAC) FOR THREE-DIMENSIONAL MEMORY DEVICES

MEMORY CELL STRUCTURE OF A THREE-DIMENSIONAL MEMORY DEVICE

VERTICAL MEMORY DEVICES

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATION THEREOF

WAFER FLATNESS CONTROL USING BACKSIDE COMPENSATION STRUCTURE

MULTIPLE-STACK THREE-DIMENSIONAL MEMORY DEVICE AND FABRICATION METH...

METHODS FOR FORMING THREE-DIMENSIONAL MEMORY DEVICES

Memory Device and Forming Method Thereof

METHOD FOR FORMING DUAL-DECK CHANNEL HOLE STRUCTURE OF THREE-DIMENS...