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Patents Grants
last 30 patents
Information
Patent Grant
Word line structure of three-dimensional memory device
Patent number
12,232,320
Issue date
Feb 18, 2025
Yangtze Memory Technologies Co., Ltd.
Qiang Xu
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Word line structure of three-dimensional memory device
Patent number
11,792,989
Issue date
Oct 17, 2023
Yangtze Memory Technologies Co., Ltd.
Qiang Xu
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Trench structures for three-dimensional memory devices
Patent number
11,729,971
Issue date
Aug 15, 2023
Yangtze Memory Technologies Co., Ltd.
Qiang Xu
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Word line structure of three-dimensional memory device
Patent number
11,222,903
Issue date
Jan 11, 2022
Yangtze Memory Technologies Co., Ltd.
Qiang Xu
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Trench structures for three-dimensional memory devices
Patent number
11,205,656
Issue date
Dec 21, 2021
Yangtze Memory Technologies Co., Ltd.
Qiang Xu
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Trench structures for three-dimensional memory devices
Patent number
10,727,245
Issue date
Jul 28, 2020
Yangtze Memory Technologies Co., Ltd.
Qiang Xu
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method for forming gate structure of three-dimensional memory device
Patent number
10,680,009
Issue date
Jun 9, 2020
Yangtze Memory Technologies Co., Ltd.
Qiang Xu
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Word line structure of three-dimensional memory device
Patent number
10,651,192
Issue date
May 12, 2020
Yangtze Memory Technologies Co, Ltd.
Qiang Xu
H01 - BASIC ELECTRIC ELEMENTS
Patents Applications
last 30 patents
Information
Patent Application
WORD LINE STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE
Publication number
20230413560
Publication date
Dec 21, 2023
Yangtze Memory Technologies Co., Ltd.
Qiang XU
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
TRENCH STRUCTURES FOR THREE-DIMENSIONAL MEMORY DEVICES
Publication number
20230284445
Publication date
Sep 7, 2023
Yangtze Memory Technologies Co., Ltd.
Qiang XU
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
TRENCH STRUCTURES FOR THREE-DIMENSIONAL MEMORY DEVICES
Publication number
20220115395
Publication date
Apr 14, 2022
Yangtze Memory Technologies Co., Ltd.
Qiang XU
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
WORD LINE STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE
Publication number
20220059564
Publication date
Feb 24, 2022
Yangtze Memory Technologies Co., Ltd.
Qiang XU
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
TRENCH STRUCTURES FOR THREE-DIMENSIONAL MEMORY DEVICES
Publication number
20200335514
Publication date
Oct 22, 2020
Yangtze Memory Technologies Co., Ltd.
Qiang XU
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
WORD LINE STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE
Publication number
20200243557
Publication date
Jul 30, 2020
Yangtze Memory Technologies Co., Ltd.
Qiang XU
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
TRENCH STRUCTURES FOR THREE-DIMENSIONAL MEMORY DEVICES
Publication number
20190081059
Publication date
Mar 14, 2019
Yangtze Memory Technologies Co., Ltd.
Qiang XU
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
METHOD FOR FORMING GATE STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE
Publication number
20190067323
Publication date
Feb 28, 2019
Yangtze Memory Technologies Co., Ltd.
Qiang XU
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
WORD LINE STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE
Publication number
20190043883
Publication date
Feb 7, 2019
Yangtze Memory Technologies Co., Ltd.
Qiang XU
H01 - BASIC ELECTRIC ELEMENTS