Qiang XU

Person

Wuhan, CN

People

Patents Grantslast 30 patents

Information Patent Grant
Trench structures for three-dimensional memory devices
- Patent number 12,363,896
- Issue date Jul 15, 2025
- Yangtze Memory Technologies Co., Ltd.
- Qiang Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Word line structure of three-dimensional memory device
- Patent number 12,232,320
- Issue date Feb 18, 2025
- Yangtze Memory Technologies Co., Ltd.
- Qiang Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Word line structure of three-dimensional memory device
- Patent number 11,792,989
- Issue date Oct 17, 2023
- Yangtze Memory Technologies Co., Ltd.
- Qiang Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench structures for three-dimensional memory devices
- Patent number 11,729,971
- Issue date Aug 15, 2023
- Yangtze Memory Technologies Co., Ltd.
- Qiang Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Word line structure of three-dimensional memory device
- Patent number 11,222,903
- Issue date Jan 11, 2022
- Yangtze Memory Technologies Co., Ltd.
- Qiang Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench structures for three-dimensional memory devices
- Patent number 11,205,656
- Issue date Dec 21, 2021
- Yangtze Memory Technologies Co., Ltd.
- Qiang Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench structures for three-dimensional memory devices
- Patent number 10,727,245
- Issue date Jul 28, 2020
- Yangtze Memory Technologies Co., Ltd.
- Qiang Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming gate structure of three-dimensional memory device
- Patent number 10,680,009
- Issue date Jun 9, 2020
- Yangtze Memory Technologies Co., Ltd.
- Qiang Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Word line structure of three-dimensional memory device
- Patent number 10,651,192
- Issue date May 12, 2020
- Yangtze Memory Technologies Co, Ltd.
- Qiang Xu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
WORD LINE STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE
- Publication number 20250176182
- Publication date May 29, 2025
- Yangtze Memory Technologies Co., Ltd.
- Qiang XU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WORD LINE STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE
- Publication number 20230413560
- Publication date Dec 21, 2023
- Yangtze Memory Technologies Co., Ltd.
- Qiang XU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH STRUCTURES FOR THREE-DIMENSIONAL MEMORY DEVICES
- Publication number 20230284445
- Publication date Sep 7, 2023
- Yangtze Memory Technologies Co., Ltd.
- Qiang XU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH STRUCTURES FOR THREE-DIMENSIONAL MEMORY DEVICES
- Publication number 20220115395
- Publication date Apr 14, 2022
- Yangtze Memory Technologies Co., Ltd.
- Qiang XU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WORD LINE STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE
- Publication number 20220059564
- Publication date Feb 24, 2022
- Yangtze Memory Technologies Co., Ltd.
- Qiang XU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH STRUCTURES FOR THREE-DIMENSIONAL MEMORY DEVICES
- Publication number 20200335514
- Publication date Oct 22, 2020
- Yangtze Memory Technologies Co., Ltd.
- Qiang XU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WORD LINE STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE
- Publication number 20200243557
- Publication date Jul 30, 2020
- Yangtze Memory Technologies Co., Ltd.
- Qiang XU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH STRUCTURES FOR THREE-DIMENSIONAL MEMORY DEVICES
- Publication number 20190081059
- Publication date Mar 14, 2019
- Yangtze Memory Technologies Co., Ltd.
- Qiang XU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING GATE STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE
- Publication number 20190067323
- Publication date Feb 28, 2019
- Yangtze Memory Technologies Co., Ltd.
- Qiang XU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WORD LINE STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE
- Publication number 20190043883
- Publication date Feb 7, 2019
- Yangtze Memory Technologies Co., Ltd.
- Qiang XU
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Trench structures for three-dimensional memory devices

Word line structure of three-dimensional memory device

Word line structure of three-dimensional memory device

Trench structures for three-dimensional memory devices

Word line structure of three-dimensional memory device

Trench structures for three-dimensional memory devices

Trench structures for three-dimensional memory devices

Method for forming gate structure of three-dimensional memory device

Word line structure of three-dimensional memory device

Patents Applicationslast 30 patents

WORD LINE STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE

WORD LINE STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE

TRENCH STRUCTURES FOR THREE-DIMENSIONAL MEMORY DEVICES

TRENCH STRUCTURES FOR THREE-DIMENSIONAL MEMORY DEVICES

WORD LINE STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE

TRENCH STRUCTURES FOR THREE-DIMENSIONAL MEMORY DEVICES

WORD LINE STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE

TRENCH STRUCTURES FOR THREE-DIMENSIONAL MEMORY DEVICES

METHOD FOR FORMING GATE STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE

WORD LINE STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE