Qingyun Yang

Person

Poughkeepsie, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Methods for etching metal films using plasma processing
- Patent number 12,057,322
- Issue date Aug 6, 2024
- Tokyo Electron Limited
- Nicholas Joy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Oxygen-free plasma etching for contact etching of resistive random...
- Patent number 11,258,012
- Issue date Feb 22, 2022
- Tokyo Electron Limited
- Devi Koty
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for patterning a magnetic tunnel junction
- Patent number 10,651,372
- Issue date May 12, 2020
- Tokyo Electron Limited
- Qingyun Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of replacement source/drain for 3D CMOS transistors
- Patent number 9,105,741
- Issue date Aug 11, 2015
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of removing high-K dielectric layer on sidewalls of gate str...
- Patent number 8,481,389
- Issue date Jul 9, 2013
- International Business Machines Corporation
- Ying Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate patterning of nano-channel devices
- Patent number 8,445,948
- Issue date May 21, 2013
- International Business Machines Corporation
- Nicholas C. M. Fuller
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Gate patterning of nano-channel devices
- Patent number 7,816,275
- Issue date Oct 19, 2010
- International Business Machines Corporation
- Nicholas C. M. Fuller
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Integration schemes for fabricating polysilicon gate MOSFET and hig...
- Patent number 7,435,652
- Issue date Oct 14, 2008
- International Business Machines Corporation
- Tze-chiang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making sub-lithographic features
- Patent number 6,960,510
- Issue date Nov 1, 2005
- International Business Machines Corporation
- Sadanand V. Deshpande
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate linewidth tailoring and critical dimension control for sub-100...
- Patent number 6,864,041
- Issue date Mar 8, 2005
- International Business Machines Corporation
- Jeffrey J. Brown
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for uniform reactive ion etching of dual pre-doped polysilic...
- Patent number 6,828,187
- Issue date Dec 7, 2004
- International Business Machines Corporation
- Joyce C. Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to form gate conductor structures of dual doped polysilicon
- Patent number 6,703,269
- Issue date Mar 9, 2004
- International Business Machines Corporation
- Jeffrey J. Brown
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to controllably form notched polysilicon gate structures
- Patent number 6,541,320
- Issue date Apr 1, 2003
- International Business Machines Corporation
- Jeffrey Brown
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of notched gates by passivating partially etched gate s...
- Patent number 6,509,219
- Issue date Jan 21, 2003
- International Business Machines Corporation
- Len Y. Tsou
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Plasma Co-Doping To Reduce The Forming Voltage In Resistive Random...
- Publication number 20220393107
- Publication date Dec 8, 2022
- TOKYO ELECTRON LIMITED
- Devi KOTY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR ETCHING METAL FILMS USING PLASMA PROCESSING
- Publication number 20210118693
- Publication date Apr 22, 2021
- TOKYO ELECTRON LIMITED
- Nicholas Joy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Oxygen-Free Plasma Etching For Contact Etching of Resistive Random...
- Publication number 20200203607
- Publication date Jun 25, 2020
- TOKYO ELECTRON LIMITED
- Devi Koty
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESS FOR PATTERNING A MAGNETIC TUNNEL JUNCTION
- Publication number 20180358548
- Publication date Dec 13, 2018
- TOKYO ELECTRON LIMITED
- Qingyun Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REPLACEMENT SOURCE/DRAIN FOR 3D CMOS TRANSISTORS
- Publication number 20140070316
- Publication date Mar 13, 2014
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Removing High-K Dielectric Layer on Sidewalls of Gate Str...
- Publication number 20120256278
- Publication date Oct 11, 2012
- International Business Machines Corporation
- Ying Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE PATTERNING OF NANO-CHANNEL DEVICES
- Publication number 20110006367
- Publication date Jan 13, 2011
- International Business Machines Corporation
- Nicholas C. M. Fuller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE PATTERNING OF NANO-CHANNEL DEVICES
- Publication number 20100252810
- Publication date Oct 7, 2010
- International Business Machines Corporation
- Nicholas C. M. Fuller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATION SCHEMES FOR FABRICATING POLYSILICON GATE MOSFET AND HIG...
- Publication number 20080242070
- Publication date Oct 2, 2008
- International Business Machines Corporation
- Tze-chiang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR PLASMA ETCHING HAVING IMPROVED ACROSS-WAFER E...
- Publication number 20080194112
- Publication date Aug 14, 2008
- International Business Machines Corporation
- Qingyun Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING DISPOSABLE SPACERS FOR IMPROVED STRESSED NITRIDE...
- Publication number 20080182372
- Publication date Jul 31, 2008
- International Business Machines Corporation
- Joyce C. Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of making sub-lithographic features
- Publication number 20040002203
- Publication date Jan 1, 2004
- International Business Machines Corporation
- Sadanand V. Deshpande
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method to form gate conductor structures of dual doped polysilicon
- Publication number 20030186492
- Publication date Oct 2, 2003
- International Business Machines Corporation
- Jeffrey J. Brown
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO CONTROLLABLY FORM NOTCHED POLYSILICON GATE STRUCTURES
- Publication number 20030032225
- Publication date Feb 13, 2003
- International Business Machines Corporation
- Jeffery Brown
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gate linewidth tailoring and critical dimension control for sub-100...
- Publication number 20020164546
- Publication date Nov 7, 2002
- International Business Machines Corporation
- Jeffrey J. Brown
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fabrication of notched gates by passivating partially etched gate s...
- Publication number 20020132437
- Publication date Sep 19, 2002
- International Business Machines Corporation
- Len Y. Tsou
- H01 - BASIC ELECTRIC ELEMENTS

Qingyun Yang

Person

Patents Grantslast 30 patents

Methods for etching metal films using plasma processing

Oxygen-free plasma etching for contact etching of resistive random...

Process for patterning a magnetic tunnel junction

Method of replacement source/drain for 3D CMOS transistors

Method of removing high-K dielectric layer on sidewalls of gate str...

Gate patterning of nano-channel devices

Gate patterning of nano-channel devices

Integration schemes for fabricating polysilicon gate MOSFET and hig...

Method of making sub-lithographic features

Gate linewidth tailoring and critical dimension control for sub-100...

Method for uniform reactive ion etching of dual pre-doped polysilic...

Method to form gate conductor structures of dual doped polysilicon

Method to controllably form notched polysilicon gate structures

Fabrication of notched gates by passivating partially etched gate s...

Patents Applicationslast 30 patents

Plasma Co-Doping To Reduce The Forming Voltage In Resistive Random...

METHODS FOR ETCHING METAL FILMS USING PLASMA PROCESSING

Oxygen-Free Plasma Etching For Contact Etching of Resistive Random...

PROCESS FOR PATTERNING A MAGNETIC TUNNEL JUNCTION

REPLACEMENT SOURCE/DRAIN FOR 3D CMOS TRANSISTORS

Method of Removing High-K Dielectric Layer on Sidewalls of Gate Str...

GATE PATTERNING OF NANO-CHANNEL DEVICES

GATE PATTERNING OF NANO-CHANNEL DEVICES

INTEGRATION SCHEMES FOR FABRICATING POLYSILICON GATE MOSFET AND HIG...

METHOD AND SYSTEM FOR PLASMA ETCHING HAVING IMPROVED ACROSS-WAFER E...

METHOD OF FORMING DISPOSABLE SPACERS FOR IMPROVED STRESSED NITRIDE...

Method of making sub-lithographic features

Method to form gate conductor structures of dual doped polysilicon

METHOD TO CONTROLLABLY FORM NOTCHED POLYSILICON GATE STRUCTURES

Gate linewidth tailoring and critical dimension control for sub-100...

Fabrication of notched gates by passivating partially etched gate s...