Qingzhu ZHANG

Person

Beijing, CN

People

Patents Grantslast 30 patents

Information Patent Grant
Method for forming gate-all-around nanowire device
- Patent number 11,594,608
- Issue date Feb 28, 2023
- Institute of Microelectronics, Chinese Academy of Sciences
- Huaxiang Yin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked nanowire or nanosheet gate-all-around device and method for...
- Patent number 11,476,328
- Issue date Oct 18, 2022
- Institute of Microelectronics, Chinese Academy of Sciences
- Yongliang Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure of stacked gate-all-around nano-sheet CMOS device and met...
- Patent number 11,411,091
- Issue date Aug 9, 2022
- Institute of Microelectronics, Chinese Academy of Sciences
- Huaxiang Yin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 11,257,933
- Issue date Feb 22, 2022
- Institute of Microelectronics, Chinese Academy
- Huaxiang Yin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Negative capacitance field effect transistor and method for manufac...
- Patent number 11,069,808
- Issue date Jul 20, 2021
- Institute of Microelectronics, Chinese Academy of Sciences
- Huaxiang Yin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 11,024,708
- Issue date Jun 1, 2021
- Institute of Microelectronics, Chinese Academy of Sciences
- Yongliang Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming metal silicide
- Patent number 10,096,691
- Issue date Oct 9, 2018
- Institute of Microelectronics, Chinese Academy of Sciences
- Qingzhu Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS device with improved accuracy of threshold voltage adjustment...
- Patent number 9,373,622
- Issue date Jun 21, 2016
- Institute of Microelectronics, Chinese Academy of Sciences
- Huaxiang Yin
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
STRUCTURE OF STACKED GATE-ALL-AROUND NANO-SHEET CMOS DEVICE AND MET...
- Publication number 20220115513
- Publication date Apr 14, 2022
- INSTITUTE OF MICROELECTONICS, CHINESE ACADEMY OF SCIENCES
- Huaxiang YIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20210193822
- Publication date Jun 24, 2021
- Institute of Microelectronics, Chinese Academy of Sciences
- Huaxiang YIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED NANOWIRE OR NANOSHEET GATE-ALL-AROUND DEVICE AND METHOD FOR...
- Publication number 20210151561
- Publication date May 20, 2021
- Institute of Microelectronics, Chinese Academy of Sciences
- Yongliang LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20210151557
- Publication date May 20, 2021
- Institute of Microelectronics, Chinese Academy of Sciences
- Yongliang LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method For Forming Gate-All-Around Nanowire Device
- Publication number 20200335596
- Publication date Oct 22, 2020
- Institute of Microelectronics, Chinese Academy of Sciences
- Huaxiang YIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NEGATIVE CAPACITANCE FIELD EFFECT TRANSISTOR AND METHOD FOR MANUFAC...
- Publication number 20200328309
- Publication date Oct 15, 2020
- Institute of Microelectronis, Chinese Academy of Sciences
- Huaxiang YIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTILAYER MOS DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20200211910
- Publication date Jul 2, 2020
- Institute of Microelectronics, Chinese Academy of Sciences
- Huaxiang YIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FORMING METAL SILICIDE
- Publication number 20160268391
- Publication date Sep 15, 2016
- Institute of Microelectronics, Chinese Academy of Sciences
- Qingzhu ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CMOS DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20160086946
- Publication date Mar 24, 2016
- Institute of Microelectronics, Chinese Academy of Sciences
- Huaxiang YIN
- H01 - BASIC ELECTRIC ELEMENTS

Qingzhu ZHANG

Person

Patents Grantslast 30 patents

Method for forming gate-all-around nanowire device

Stacked nanowire or nanosheet gate-all-around device and method for...

Structure of stacked gate-all-around nano-sheet CMOS device and met...

Semiconductor device and method for manufacturing the same

Negative capacitance field effect transistor and method for manufac...

Semiconductor device and method for manufacturing the same

Methods for forming metal silicide

CMOS device with improved accuracy of threshold voltage adjustment...

Patents Applicationslast 30 patents

STRUCTURE OF STACKED GATE-ALL-AROUND NANO-SHEET CMOS DEVICE AND MET...

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

STACKED NANOWIRE OR NANOSHEET GATE-ALL-AROUND DEVICE AND METHOD FOR...

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

Method For Forming Gate-All-Around Nanowire Device

NEGATIVE CAPACITANCE FIELD EFFECT TRANSISTOR AND METHOD FOR MANUFAC...

MULTILAYER MOS DEVICE AND METHOD FOR MANUFACTURING THE SAME

METHODS FOR FORMING METAL SILICIDE

CMOS DEVICE AND METHOD FOR MANUFACTURING THE SAME