Qinli Ma

Person

Mt Kisco, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Magnetic tunneling junction element with a composite capping layer...
- Patent number 12,108,684
- Issue date Oct 1, 2024
- HeFeChip Corporation Limited
- Qinli Ma
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic tunnel junction element with a robust reference layer
- Patent number 11,763,972
- Issue date Sep 19, 2023
- HeFeChip Corporation Limited
- Qinli Ma
- G11 - INFORMATION STORAGE
Information Patent Grant
Asymmetric engineered storage layer of magnetic tunnel junction ele...
- Patent number 11,538,986
- Issue date Dec 27, 2022
- HeFeChip Corporation Limited
- Qinli Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating magnetic tunneling junction element with a c...
- Patent number 11,456,411
- Issue date Sep 27, 2022
- HeFeChip Corporation Limited
- Qinli Ma
- G01 - MEASURING TESTING
Information Patent Grant
Semiconductor memory structure with magnetic tunneling junction sta...
- Patent number 11,342,496
- Issue date May 24, 2022
- HeFeChip Corporation Limited
- Hong-Hui Hsu
- G11 - INFORMATION STORAGE
Information Patent Grant
Composite storage layer for magnetic random access memory devices
- Patent number 11,114,605
- Issue date Sep 7, 2021
- HeFeChip Corporation Limited
- Qinli Ma
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
MAGNETIC TUNNEL JUNCTION STRUCTURE WITH NON-MAGNETIC AMORPHOUS INSE...
- Publication number 20240081155
- Publication date Mar 7, 2024
- HeFeChip Corporation Limited
- Young-suk Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20210343930
- Publication date Nov 4, 2021
- HeFeChip Corporation Limited
- Hong-Hui Hsu
- G11 - INFORMATION STORAGE
Information Patent Application
ASYMMETRIC ENGINEERED STORAGE LAYER OF MAGNETIC TUNNEL JUNCTION ELE...
- Publication number 20210328135
- Publication date Oct 21, 2021
- HeFeChip Corporation Limited
- Qinli Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC TUNNELING JUNCTION ELEMENT WITH A COMPOSITE CAPPING LAYER...
- Publication number 20210265561
- Publication date Aug 26, 2021
- HeFeChip Corporation Limited
- Qinli Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC TUNNEL JUNCTION ELEMENT WITH A ROBUST REFERENCE LAYER
- Publication number 20210134504
- Publication date May 6, 2021
- HeFeChip Corporation Limited
- Qinli Ma
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC TUNNELING JUNCTION ELEMENT WITH A COMPOSITE CAPPING LAYER...
- Publication number 20210020215
- Publication date Jan 21, 2021
- HeFeChip Corporation Limited
- Qinli Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING MAGNETIC TUNNELING JUNCTION ELEMENT WITH A C...
- Publication number 20210005809
- Publication date Jan 7, 2021
- HeFeChip Corporation Limited
- Qinli Ma
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC TUNNEL JUNCTION ELEMENT WITH A ROBUST REFERENCE LAYER
- Publication number 20200052191
- Publication date Feb 13, 2020
- HeFeChip Corporation Limited
- Qinli Ma
- G11 - INFORMATION STORAGE
Information Patent Application
COMPOSITE STORAGE LAYER FOR MAGNETIC RANDOM ACCESS MEMORY DEVICES
- Publication number 20200052192
- Publication date Feb 13, 2020
- HeFeChip Corporation Limited
- Qinli Ma
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Magnetic tunneling junction element with a composite capping layer...

Magnetic tunnel junction element with a robust reference layer

Asymmetric engineered storage layer of magnetic tunnel junction ele...

Method for fabricating magnetic tunneling junction element with a c...

Semiconductor memory structure with magnetic tunneling junction sta...

Composite storage layer for magnetic random access memory devices

Patents Applicationslast 30 patents

MAGNETIC TUNNEL JUNCTION STRUCTURE WITH NON-MAGNETIC AMORPHOUS INSE...

SEMICONDUCTOR MEMORY STRUCTURE AND METHOD FOR FORMING THE SAME

ASYMMETRIC ENGINEERED STORAGE LAYER OF MAGNETIC TUNNEL JUNCTION ELE...

MAGNETIC TUNNELING JUNCTION ELEMENT WITH A COMPOSITE CAPPING LAYER...

MAGNETIC TUNNEL JUNCTION ELEMENT WITH A ROBUST REFERENCE LAYER

MAGNETIC TUNNELING JUNCTION ELEMENT WITH A COMPOSITE CAPPING LAYER...

METHOD FOR FABRICATING MAGNETIC TUNNELING JUNCTION ELEMENT WITH A C...

MAGNETIC TUNNEL JUNCTION ELEMENT WITH A ROBUST REFERENCE LAYER

COMPOSITE STORAGE LAYER FOR MAGNETIC RANDOM ACCESS MEMORY DEVICES