Qintao Zhang

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Tustin, CA, US

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Patents Grantslast 30 patents

Information Patent Grant
One time programmable memory with a twin gate structure
- Patent number 9,659,944
- Issue date May 23, 2017
- Avago Technologies General IP (Singapore) Pte. Ltd.
- Qintao Zhang
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of making a programmable cell and structure thereof
- Patent number 9,634,014
- Issue date Apr 25, 2017
- Avago Technologies General IP (Singapore) Pte. Ltd.
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Devices having multiple threshold voltages and method of fabricatin...
- Patent number 9,536,880
- Issue date Jan 3, 2017
- Broadcom Corporation
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Super junction LDMOS finFET devices
- Patent number 9,472,615
- Issue date Oct 18, 2016
- Broadcom Corporation
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Extended-drain transistor using inner spacer
- Patent number 9,379,212
- Issue date Jun 28, 2016
- Broadcom Corporation
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Semiconductor Device with Split Work Functions
- Publication number 20170005093
- Publication date Jan 5, 2017
- BROADCOM CORPORATION
- Qintao ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
One Time Programmable Memory with a Twin Gate Structure
- Publication number 20170005103
- Publication date Jan 5, 2017
- BROADCOM CORPORATION
- Qintao ZHANG
- G11 - INFORMATION STORAGE
Information Patent Application
DEVICES HAVING MULTIPLE THRESHOLD VOLTAGES AND METHOD OF FABRICATIN...
- Publication number 20160300838
- Publication date Oct 13, 2016
- BROADCOM CORPORATION
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MAKING A PROGRAMMABLE CELL AND STRUCTURE THEREOF
- Publication number 20160276355
- Publication date Sep 22, 2016
- BROADCOM CORPORATION
- Qintao ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EXTENDED-DRAIN TRANSISTOR USING INNER SPACER
- Publication number 20160190281
- Publication date Jun 30, 2016
- BROADCOM CORPORATION
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPER JUNCTION LDMOS FINFET DEVICES
- Publication number 20160181358
- Publication date Jun 23, 2016
- BROADCOM CORPORATION
- Qintao ZHANG
- H01 - BASIC ELECTRIC ELEMENTS