Qiqing C. Ouyang

Person

Yorktown Heights, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Data classification for data lake catalog
- Patent number 11,893,500
- Issue date Feb 6, 2024
- International Business Machines Corporation
- Marcio T. Moura
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Data classification for data lake catalog
- Patent number 11,887,010
- Issue date Jan 30, 2024
- International Business Machines Corporation
- Marcio T. Moura
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Modeling environment noise for training neural networks
- Patent number 11,514,314
- Issue date Nov 29, 2022
- International Business Machines Corporation
- Aaron K. Baughman
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Detection of defect in edge device manufacturing by artificial inte...
- Patent number 11,493,901
- Issue date Nov 8, 2022
- International Business Machines Corporation
- Qiqing Christine Ouyang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Classical artificial intelligence (AI) and probability based code i...
- Patent number 11,188,317
- Issue date Nov 30, 2021
- International Business Machines Corporation
- Aaron K. Baughman
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Transistor structure with varied gate cross-sectional area
- Patent number 10,680,085
- Issue date Jun 9, 2020
- GLOBALFOUNDRIES Inc.
- Dominic J. Schepis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for tensile and compressive strained silicon g...
- Patent number 10,643,907
- Issue date May 5, 2020
- International Business Machines Corporation
- Pranita Kerber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including epitaxially formed buried channel re...
- Patent number 10,374,042
- Issue date Aug 6, 2019
- International Business Machines Corporation
- Jie Deng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for tensile and compressive strained silicon g...
- Patent number 10,204,837
- Issue date Feb 12, 2019
- International Business Machines Corporation
- Pranita Kerber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiGe FinFET with improved junction doping control
- Patent number 10,176,990
- Issue date Jan 8, 2019
- International Business Machines Corporation
- Pranita Kerber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for tensile and compressive strained silicon g...
- Patent number 10,002,798
- Issue date Jun 19, 2018
- International Business Machines Corporation
- Pranita Kerber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduced resistance short-channel InGaAs planar MOSFET
- Patent number 9,972,711
- Issue date May 15, 2018
- International Business Machines Corporation
- Pranita Kerber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor structure with varied gate cross-sectional area
- Patent number 9,966,457
- Issue date May 8, 2018
- GLOBALFOUNDRIES Inc.
- Dominic J. Schepis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the semiconductor...
- Patent number 9,812,556
- Issue date Nov 7, 2017
- Renesas Electronics Corporation
- Shogo Mochizuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET device with vertical silicide on recessed source/drain epita...
- Patent number 9,741,807
- Issue date Aug 22, 2017
- International Business Machines Corporation
- Keith E. Fogel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including epitaxially formed buried channel re...
- Patent number 9,679,969
- Issue date Jun 13, 2017
- International Business Machines Corporation
- Jie Deng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for tensile and compressive strained silicon g...
- Patent number 9,647,119
- Issue date May 9, 2017
- International Business Machines Corporation
- Pranita Kerber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated microfluidics system
- Patent number 9,643,181
- Issue date May 9, 2017
- International Business Machines Corporation
- Hung-Yang Chang
- B01 - PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
Information Patent Grant
Semiconductor device including epitaxially formed buried channel re...
- Patent number 9,595,598
- Issue date Mar 14, 2017
- International Business Machines Corporation
- Jie Deng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including epitaxially formed buried channel re...
- Patent number 9,590,106
- Issue date Mar 7, 2017
- International Business Machines Corporation
- Jie Deng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET device with vertical silicide on recessed source/drain epita...
- Patent number 9,576,806
- Issue date Feb 21, 2017
- International Business Machines Corporation
- Keith E. Fogel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including gate channel having adjusted thresho...
- Patent number 9,530,699
- Issue date Dec 27, 2016
- International Business Machines Corporation
- Pranita Kerber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration of electromechanical and CMOS devices in front-end-of-l...
- Patent number 9,505,611
- Issue date Nov 29, 2016
- Global Foundries Inc.
- Fei Liu
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
FinFET device including fins having a smaller thickness in a channe...
- Patent number 9,502,408
- Issue date Nov 22, 2016
- GLOBALFOUNDRIES Inc.
- Pranita Kerber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for highly strained germanium channel fins for...
- Patent number 9,502,420
- Issue date Nov 22, 2016
- International Business Machines Corporation
- Stephen W. Bedell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiGe FinFET with improved junction doping control
- Patent number 9,443,963
- Issue date Sep 13, 2016
- International Business Machines Corporation
- Pranita Kerber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for tensile and compressive strained silicon g...
- Patent number 9,443,873
- Issue date Sep 13, 2016
- International Business Machines Corporation
- Pranita Kerber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduced resistance short-channel InGaAs planar MOSFET
- Patent number 9,412,865
- Issue date Aug 9, 2016
- International Business Machines Corporation
- Pranita Kerber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET device with vertical silicide on recessed source/drain epita...
- Patent number 9,391,173
- Issue date Jul 12, 2016
- International Business Machines Corporation
- Keith E. Fogel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained semiconductor trampoline
- Patent number 9,391,198
- Issue date Jul 12, 2016
- GLOBALFOUNDRIES Inc.
- Pranita Kerber
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
DETECTION OF DEFECT IN EDGE DEVICE MANUFACTURING BY ARTIFICIAL INTE...
- Publication number 20220091576
- Publication date Mar 24, 2022
- International Business Machines Corporation
- Qiqing Christine Ouyang
- G05 - CONTROLLING REGULATING
Information Patent Application
CLASSICAL ARTIFICIAL INTELLIGENCE (AI) AND PROBABILITY BASED CODE I...
- Publication number 20210286603
- Publication date Sep 16, 2021
- International Business Machines Corporation
- Aaron K. Baughman
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MODELING ENVIRONMENT NOISE FOR TRAINING NEURAL NETWORKS
- Publication number 20210158143
- Publication date May 27, 2021
- International Business Machines Corporation
- Aaron K. Baughman
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
DATA CLASSIFIER
- Publication number 20190164062
- Publication date May 30, 2019
- International Business Machines Corporation
- Marcio T. Moura
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
DATA CLASSIFICATION
- Publication number 20190164063
- Publication date May 30, 2019
- International Business Machines Corporation
- Marcio T. Moura
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
STRUCTURE AND METHOD FOR TENSILE AND COMPRESSIVE STRAINED SILICON G...
- Publication number 20190157167
- Publication date May 23, 2019
- International Business Machines Corporation
- Pranita Kerber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD FOR TENSILE AND COMPRESSIVE STRAINED SILICON G...
- Publication number 20180233418
- Publication date Aug 16, 2018
- International Business Machines Corporation
- Pranita Kerber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR STRUCTURE WITH VARIED GATE CROSS-SECTIONAL AREA
- Publication number 20180190797
- Publication date Jul 5, 2018
- GLOBALFOUNDRIES INC.
- Dominic J. Schepis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PERSONAL TRAVEL HEALTH VULNERABILITY NAVIGATOR
- Publication number 20170351832
- Publication date Dec 7, 2017
- International Business Machines Corporation
- Amos CAHAN
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
PERSONAL TRAVEL HEALTH VULNERABILITY NAVIGATOR
- Publication number 20170351833
- Publication date Dec 7, 2017
- International Business Machines Corporation
- Amos CAHAN
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
PERSONAL TRAVEL HEALTH VULNERABILITY NAVIGATOR
- Publication number 20170351831
- Publication date Dec 7, 2017
- International Business Machines Corporation
- Amos CAHAN
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
PERSONAL TRAVEL HEALTH VULNERABILITY NAVIGATOR
- Publication number 20170351834
- Publication date Dec 7, 2017
- International Business Machines Corporation
- Amos CAHAN
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
TRANSISTOR STRUCTURE WITH VARIED GATE CROSS-SECTIONAL AREA
- Publication number 20170271483
- Publication date Sep 21, 2017
- GLOBALFOUNDRIES INC.
- Dominic J. Schepis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD FOR TENSILE AND COMPRESSIVE STRAINED SILICON G...
- Publication number 20170207136
- Publication date Jul 20, 2017
- International Business Machines Corporation
- Pranita Kerber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET DEVICE WITH VERTICAL SILICIDE ON RECESSED SOURCE/DRAIN EPITA...
- Publication number 20170077249
- Publication date Mar 16, 2017
- International Business Machines Corporation
- Keith E. Fogel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING EPITAXIALLY FORMED BURIED CHANNEL RE...
- Publication number 20170069718
- Publication date Mar 9, 2017
- International Business Machines Corporation
- Jie Deng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING EPITAXIALLY FORMED BURIED CHANNEL RE...
- Publication number 20170062589
- Publication date Mar 2, 2017
- International Business Machines Corporation
- Jie Deng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING EPITAXIALLY FORMED BURIED CHANNEL RE...
- Publication number 20170062570
- Publication date Mar 2, 2017
- International Business Machines Corporation
- Jie Deng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING EPITAXIALLY FORMED BURIED CHANNEL RE...
- Publication number 20170062602
- Publication date Mar 2, 2017
- International Business Machines Corporation
- Jie Deng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCED RESISTANCE SHORT-CHANNEL InGaAs PLANAR MOSFET
- Publication number 20160359036
- Publication date Dec 8, 2016
- International Business Machines Corporation
- Pranita Kerber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SiGe FINFET WITH IMPROVED JUNCTION DOPING CONTROL
- Publication number 20160358775
- Publication date Dec 8, 2016
- International Business Machines Corporation
- Pranita Kerber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET DEVICE WITH VERTICAL SILICIDE ON RECESSED SOURCE/DRAIN EPITA...
- Publication number 20160293428
- Publication date Oct 6, 2016
- International Business Machines Corporation
- Keith E. Fogel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SiGe FINFET WITH IMPROVED JUNCTION DOPING CONTROL
- Publication number 20160172469
- Publication date Jun 16, 2016
- International Business Machines Corporation
- Pranita Kerber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING GATE CHANNEL HAVING ADJUSTED THRESHO...
- Publication number 20160111340
- Publication date Apr 21, 2016
- International Business Machines Corporation
- Pranita Kerber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRAINED SEMICONDUCTOR TRAMPOLINE
- Publication number 20160079419
- Publication date Mar 17, 2016
- International Business Machines Corporation
- Pranita Kerber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING GATE CHANNEL HAVING ADJUSTED THRESHO...
- Publication number 20150318218
- Publication date Nov 5, 2015
- International Business Machines Corporation
- Pranita Kerber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING GATE CHANNEL HAVING ADJUSTED THRESHO...
- Publication number 20150318307
- Publication date Nov 5, 2015
- International Business Machines Corporation
- Pranita Kerber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET DEVICE WITH VERTICAL SILICIDE ON RECESSED SOURCE/DRAIN EPITA...
- Publication number 20150303281
- Publication date Oct 22, 2015
- International Business Machines Corporation
- Keith E. Fogel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SiGe FINFET WITH IMPROVED JUNCTION DOPING CONTROL
- Publication number 20150287810
- Publication date Oct 8, 2015
- International Business Machines Corporation
- Pranita Kerber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FinFET DEVICE HAVING A MERGE SOURCE DRAIN REGION UNDER CONTACT AREA...
- Publication number 20150179789
- Publication date Jun 25, 2015
- International Business Machines Corporation
- Pranita Kerber
- H01 - BASIC ELECTRIC ELEMENTS

Qiqing C. Ouyang

Person

Patents Grantslast 30 patents

Data classification for data lake catalog

Data classification for data lake catalog

Modeling environment noise for training neural networks

Detection of defect in edge device manufacturing by artificial inte...

Classical artificial intelligence (AI) and probability based code i...

Transistor structure with varied gate cross-sectional area

Structure and method for tensile and compressive strained silicon g...

Semiconductor device including epitaxially formed buried channel re...

Structure and method for tensile and compressive strained silicon g...

SiGe FinFET with improved junction doping control

Structure and method for tensile and compressive strained silicon g...

Reduced resistance short-channel InGaAs planar MOSFET

Transistor structure with varied gate cross-sectional area

Semiconductor device and method of manufacturing the semiconductor...

FinFET device with vertical silicide on recessed source/drain epita...

Semiconductor device including epitaxially formed buried channel re...

Structure and method for tensile and compressive strained silicon g...

Integrated microfluidics system

Semiconductor device including epitaxially formed buried channel re...

Semiconductor device including epitaxially formed buried channel re...

FinFET device with vertical silicide on recessed source/drain epita...

Semiconductor device including gate channel having adjusted thresho...

Integration of electromechanical and CMOS devices in front-end-of-l...

FinFET device including fins having a smaller thickness in a channe...

Structure and method for highly strained germanium channel fins for...

SiGe FinFET with improved junction doping control

Structure and method for tensile and compressive strained silicon g...

Reduced resistance short-channel InGaAs planar MOSFET

FinFET device with vertical silicide on recessed source/drain epita...

Strained semiconductor trampoline

Patents Applicationslast 30 patents

DETECTION OF DEFECT IN EDGE DEVICE MANUFACTURING BY ARTIFICIAL INTE...

CLASSICAL ARTIFICIAL INTELLIGENCE (AI) AND PROBABILITY BASED CODE I...

MODELING ENVIRONMENT NOISE FOR TRAINING NEURAL NETWORKS

DATA CLASSIFIER

DATA CLASSIFICATION

STRUCTURE AND METHOD FOR TENSILE AND COMPRESSIVE STRAINED SILICON G...

STRUCTURE AND METHOD FOR TENSILE AND COMPRESSIVE STRAINED SILICON G...

TRANSISTOR STRUCTURE WITH VARIED GATE CROSS-SECTIONAL AREA

PERSONAL TRAVEL HEALTH VULNERABILITY NAVIGATOR

PERSONAL TRAVEL HEALTH VULNERABILITY NAVIGATOR

PERSONAL TRAVEL HEALTH VULNERABILITY NAVIGATOR

PERSONAL TRAVEL HEALTH VULNERABILITY NAVIGATOR

TRANSISTOR STRUCTURE WITH VARIED GATE CROSS-SECTIONAL AREA

STRUCTURE AND METHOD FOR TENSILE AND COMPRESSIVE STRAINED SILICON G...

FINFET DEVICE WITH VERTICAL SILICIDE ON RECESSED SOURCE/DRAIN EPITA...

SEMICONDUCTOR DEVICE INCLUDING EPITAXIALLY FORMED BURIED CHANNEL RE...

SEMICONDUCTOR DEVICE INCLUDING EPITAXIALLY FORMED BURIED CHANNEL RE...

SEMICONDUCTOR DEVICE INCLUDING EPITAXIALLY FORMED BURIED CHANNEL RE...

SEMICONDUCTOR DEVICE INCLUDING EPITAXIALLY FORMED BURIED CHANNEL RE...

REDUCED RESISTANCE SHORT-CHANNEL InGaAs PLANAR MOSFET

SiGe FINFET WITH IMPROVED JUNCTION DOPING CONTROL

FINFET DEVICE WITH VERTICAL SILICIDE ON RECESSED SOURCE/DRAIN EPITA...

SiGe FINFET WITH IMPROVED JUNCTION DOPING CONTROL

SEMICONDUCTOR DEVICE INCLUDING GATE CHANNEL HAVING ADJUSTED THRESHO...

STRAINED SEMICONDUCTOR TRAMPOLINE

SEMICONDUCTOR DEVICE INCLUDING GATE CHANNEL HAVING ADJUSTED THRESHO...

SEMICONDUCTOR DEVICE INCLUDING GATE CHANNEL HAVING ADJUSTED THRESHO...

FINFET DEVICE WITH VERTICAL SILICIDE ON RECESSED SOURCE/DRAIN EPITA...

SiGe FINFET WITH IMPROVED JUNCTION DOPING CONTROL

FinFET DEVICE HAVING A MERGE SOURCE DRAIN REGION UNDER CONTACT AREA...