QIUHUA HAN

Person

Shanghai, CN

People

Patents Grantslast 30 patents

Information Patent Grant
Method of FinFET contact formation
- Patent number 11,205,596
- Issue date Dec 21, 2021
- Semiconductor Manufacturing International (Beijing) Corporation
- Qiuhua Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Interconnection structure and method for manufacturing same
- Patent number 10,707,117
- Issue date Jul 7, 2020
- Semiconductor Manufacturing (Shanghai) International Corporation
- Qiuhua Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including stripe structures
- Patent number 10,403,732
- Issue date Sep 3, 2019
- Semiconductor Manufacturing International (Shanghai) Corporation
- Xiaoying Meng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure having common gate
- Patent number 10,050,036
- Issue date Aug 14, 2018
- Semiconductor Manufacturing International (Shanghai) Corporation
- Qiuhua Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
PMOS transistor and fabrication method thereof
- Patent number 9,741,820
- Issue date Aug 22, 2017
- Semiconductor Manufacturing International (Shanghai) Corporation
- Qiuhua Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structures and fabrication method thereof
- Patent number 9,704,972
- Issue date Jul 11, 2017
- Semiconductor Manufacturing International (Shanghai) Corporation
- Qiuhua Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of FinFET formation
- Patent number 9,660,058
- Issue date May 23, 2017
- Semiconductor Manufacturing International (Beijing) Corporation
- Qiuhua Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 9,640,657
- Issue date May 2, 2017
- Semiconductor Manufacturing International (Shanghai) Corporation
- Qiuhua Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field effect transistor and method for forming the same
- Patent number 9,508,609
- Issue date Nov 29, 2016
- Semiconductor Manufacturing International (Beijing) Corporation
- Qiuhua Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 9,331,079
- Issue date May 3, 2016
- Semiconductor Manufacturing International (Shanghai) Corporation
- Qiuhua Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stripe structures and fabrication method thereof
- Patent number 9,312,355
- Issue date Apr 12, 2016
- Semiconductor Manufacturing International (Shanghai) Corporation
- Xiaoying Meng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure having common gate and fabrication method t...
- Patent number 9,196,725
- Issue date Nov 24, 2015
- Semiconductor Manufacturing International (Shanghai) Corporation
- Qiuhua Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS transistors and fabrication method thereof
- Patent number 9,147,746
- Issue date Sep 29, 2015
- Semiconductor Manufacturing International (Shanghai) Corporation
- Qiuhua Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and fabrication method
- Patent number 9,123,812
- Issue date Sep 1, 2015
- Semiconductor Manufacturing International (Shanghai) Corporation
- Qiuhua Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming high K metal gate
- Patent number 9,099,338
- Issue date Aug 4, 2015
- Semiconductor Manufacturing International (Shanghai) Corporation
- Qiuhua Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method involving multilayer...
- Patent number 8,877,651
- Issue date Nov 4, 2014
- Semiconductor Manufacturing International (Beijing) Corporation
- Qiuhua Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming a gate and a shallow trench isolation region an...
- Patent number 8,377,827
- Issue date Feb 19, 2013
- Semiconductor Manufacturing International (Shanghai) Corporation
- Qiuhua Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming a gate and a shallow trench isolation region an...
- Patent number 8,367,554
- Issue date Feb 5, 2013
- Semiconductor Manufacturing International (Shanghai) Corporation
- Qiuhua Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming a gate and a shallow trench isolation region an...
- Patent number 8,039,402
- Issue date Oct 18, 2011
- Semiconductor Manufacturing International (Shanghai) Corporation
- Qiuhua Han
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
INTERCONNECTION STRUCTURE AND METHOD FOR MANUFACTURING SAME
- Publication number 20190181038
- Publication date Jun 13, 2019
- Semiconductor Manufacturing International (Beijing) Corporation
- Qiuhua Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FINFET CONTACT FORMATION
- Publication number 20180144990
- Publication date May 24, 2018
- Semiconductor Manufacturing International (Beijing) Corporation
- QIUHUA HAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PMOS TRANSISTOR AND FABRICATION METHOD THEREOF
- Publication number 20160351686
- Publication date Dec 1, 2016
- Semiconductor Manufacturing International (Shanghai) Corporation
- QIUHUA HAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device including stripe structures
- Publication number 20160254359
- Publication date Sep 1, 2016
- Semiconductor Manufacturing International (Shanghai) Corporation
- XIAOYING MENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURES AND FABRICATION METHOD THEREOF
- Publication number 20160093718
- Publication date Mar 31, 2016
- Semiconductor Manufacturing International (Shanghai) Corporation
- QIUHUA HAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE HAVING COMMON GATE
- Publication number 20160043086
- Publication date Feb 11, 2016
- Semiconductor Manufacturing International (Shanghai) Corporation
- QIUHUA HAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20150340365
- Publication date Nov 26, 2015
- Semiconductor Manufacturing International (Shanghai) Corporation
- QIUHUA HAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20150333179
- Publication date Nov 19, 2015
- Semiconductor Manufacturing International (Shanghai) Corporation
- QIUHUA HAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FINFET FORMATION
- Publication number 20150228765
- Publication date Aug 13, 2015
- Semiconductor Manufacturing International (Beijing) Corporation
- QIUHUA HAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING HIGH K METAL GATE
- Publication number 20150069518
- Publication date Mar 12, 2015
- Semiconductor Manufacturing International (Shanghai) Corporation
- QIUHUA HAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD EFFECT TRANSISTOR AND METHOD FOR FORMING THE SAME
- Publication number 20150041867
- Publication date Feb 12, 2015
- Semiconductor Manufacturing International (Beijing) Corporation
- QIUHUA HAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOS TRANSISTORS AND FABRICATION METHOD THEREOF
- Publication number 20150035083
- Publication date Feb 5, 2015
- Semiconductor Manufacturing International (Shanghai) Corporation
- QIUHUA HAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRIPE STRUCTURES AND FABRICATION METHOD THEREOF
- Publication number 20140361399
- Publication date Dec 11, 2014
- XIAOYING MENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE HAVING COMMON GATE AND FABRICATION METHOD T...
- Publication number 20140197480
- Publication date Jul 17, 2014
- Semiconductor Manufacturing International (Shanghai) Corporation
- QIUHUA HAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND FABRICATION METHOD
- Publication number 20140197492
- Publication date Jul 17, 2014
- Semiconductor Manufacturing International (Shanghai) Corporation
- QIUHUA HAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Manufacturing Method Thereof
- Publication number 20130043516
- Publication date Feb 21, 2013
- Semiconductor Manufacturing International (Beijing) Corporation
- Qiuhua Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FORMING A GATE AND A SHALLOW TRENCH ISOLATION REGION AN...
- Publication number 20110300698
- Publication date Dec 8, 2011
- Semiconductor Manufacturing International (Shanghai) Corporation
- Qiuhua Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FORMING A GATE AND A SHALLOW TRENCH ISOLATION REGION AN...
- Publication number 20110300688
- Publication date Dec 8, 2011
- Semiconductor Manufacturing International (Shanghai) Corporation
- Qiuhua Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods for Forming a Gate and a Shallow Trench Isolation Region an...
- Publication number 20090155977
- Publication date Jun 18, 2009
- Semiconductor Manufacturing International (Shanghai) Corporation
- Qiuhua Han
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Method of FinFET contact formation

Interconnection structure and method for manufacturing same

Semiconductor device including stripe structures

Semiconductor structure having common gate

PMOS transistor and fabrication method thereof

Semiconductor structures and fabrication method thereof

Method of FinFET formation

Semiconductor device

Fin field effect transistor and method for forming the same

Semiconductor device and method of manufacturing the same

Stripe structures and fabrication method thereof

Semiconductor structure having common gate and fabrication method t...

MOS transistors and fabrication method thereof

Semiconductor device and fabrication method

Method of forming high K metal gate

Semiconductor device and manufacturing method involving multilayer...

Methods for forming a gate and a shallow trench isolation region an...

Methods for forming a gate and a shallow trench isolation region an...

Methods for forming a gate and a shallow trench isolation region an...

Patents Applicationslast 30 patents

INTERCONNECTION STRUCTURE AND METHOD FOR MANUFACTURING SAME

METHOD OF FINFET CONTACT FORMATION

PMOS TRANSISTOR AND FABRICATION METHOD THEREOF

Semiconductor device including stripe structures

SEMICONDUCTOR STRUCTURES AND FABRICATION METHOD THEREOF

SEMICONDUCTOR STRUCTURE HAVING COMMON GATE

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE

METHOD OF FINFET FORMATION

METHOD OF FORMING HIGH K METAL GATE

FIN FIELD EFFECT TRANSISTOR AND METHOD FOR FORMING THE SAME

MOS TRANSISTORS AND FABRICATION METHOD THEREOF

STRIPE STRUCTURES AND FABRICATION METHOD THEREOF

SEMICONDUCTOR STRUCTURE HAVING COMMON GATE AND FABRICATION METHOD T...

SEMICONDUCTOR DEVICE AND FABRICATION METHOD

Semiconductor Device and Manufacturing Method Thereof

METHODS FOR FORMING A GATE AND A SHALLOW TRENCH ISOLATION REGION AN...

METHODS FOR FORMING A GATE AND A SHALLOW TRENCH ISOLATION REGION AN...

Methods for Forming a Gate and a Shallow Trench Isolation Region an...