Qiuxia Xu

Person

Beijing, CN

People

Patents Grantslast 30 patents

Information Patent Grant
Method of manufacturing MOS transistor with stack of cascaded nanow...
- Patent number 10,068,990
- Issue date Sep 4, 2018
- Institute of Microelectronics, Chinese Academy of Sciences
- Huaxiang Yin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
P type MOSFET
- Patent number 10,056,261
- Issue date Aug 21, 2018
- Institute of Microelectronics, Chinese Academy of Sciences
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
N-type MOSFET and method for manufacturing the same
- Patent number 9,934,975
- Issue date Apr 3, 2018
- Institute of Microelectronics, Chinese Academy of Sciences
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for manufacturing semiconductor devices
- Patent number 9,899,270
- Issue date Feb 20, 2018
- Institute of Microelectronics, Chinese Academy of Sciences
- Qiuxia Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 9,548,387
- Issue date Jan 17, 2017
- Institute of Microelectronics, Chinese Academy of Science
- Huaxiang Yin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET device and method for manufacturing the same
- Patent number 9,391,073
- Issue date Jul 12, 2016
- Institute of Microelectronics, Chinese Academy of Sciences
- Huaxiang Yin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual-metal gate CMOS devices and method for manufacturing the same
- Patent number 9,384,986
- Issue date Jul 5, 2016
- NSITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES
- Huaxiang Yin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS device with improved accuracy of threshold voltage adjustment...
- Patent number 9,373,622
- Issue date Jun 21, 2016
- Institute of Microelectronics, Chinese Academy of Sciences
- Huaxiang Yin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 9,312,187
- Issue date Apr 12, 2016
- The Institute of Microelectronics, Chinese Academy of Science
- Huaxiang Yin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and method for manufacturing the same
- Patent number 9,281,398
- Issue date Mar 8, 2016
- The Institute of Microelectronics, Chinese Academy of Science
- Huaxiang Yin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and method for manufacturing the same
- Patent number 9,276,085
- Issue date Mar 1, 2016
- Institute of Microelectronics Chinese Academy of Sciences
- Huaxiang Yin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor device
- Patent number 9,252,059
- Issue date Feb 2, 2016
- Institute of Microelectronics, Chinese Academy of Sciences
- Qiuxia Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing P-type MOSFET
- Patent number 9,196,706
- Issue date Nov 24, 2015
- Institute of Microelectronics, Chinese Academy of Sciences
- Qiuxia Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor device
- Patent number 9,136,181
- Issue date Sep 15, 2015
- Institute of Microelectronics, Chinese Academy of Sciences
- Qiuxia Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS device and method for manufacturing the same
- Patent number 9,049,061
- Issue date Jun 2, 2015
- The Institute of Microelectronics Chinese Academy of Science
- Qiuxia Xu
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Grant
Method for manufacturing N-type MOSFET
- Patent number 9,029,225
- Issue date May 12, 2015
- Institute of Microelectronics, Chinese Academy of Sciences
- Qiuxia Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with gate stacks having stress and method of m...
- Patent number 8,994,119
- Issue date Mar 31, 2015
- The Institute of Microelectronics Chinese Academy of Sciences
- Huaxiang Yin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and method for manufacturing the same
- Patent number 8,932,927
- Issue date Jan 13, 2015
- Institute of Microelectronics, Chinese Academy of Sciences
- Huajie Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor field-effect transistor structure and method for manu...
- Patent number 8,895,374
- Issue date Nov 25, 2014
- Institute of Microelectronics, Chinese Academy of Sciences
- Huajie Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming and controlling molecular level SiO2 interface l...
- Patent number 8,822,292
- Issue date Sep 2, 2014
- Institute of Microelectronics, Chinese Academy of Sciences
- Qiuxia Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
P-type semiconductor device and method for manufacturing the same
- Patent number 8,786,032
- Issue date Jul 22, 2014
- Institute of Microelectronics, Chinese Academy of Sciences
- Gaobo Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor field effect transistor
- Patent number 8,778,744
- Issue date Jul 15, 2014
- Institute of Microelectronics, Chinese Academy of Sciences
- Huajie Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 8,754,482
- Issue date Jun 17, 2014
- Institute of Microelectronics, Chinese Academy of Sciences
- Huaxiang Yin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for integration of dual metal gates and dual high-K dielectr...
- Patent number 8,748,250
- Issue date Jun 10, 2014
- Institute of Microelectronics, Chinese Academy of Sciences
- Qiuxia Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of introducing strain into channel and device manufactured b...
- Patent number 8,748,272
- Issue date Jun 10, 2014
- Institute of Microelectronics, Chinese Academy of Sciences
- Huaxiang Yin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for planarizing interlayer dielectric layer
- Patent number 8,703,617
- Issue date Apr 22, 2014
- Institute of Microelectronics, Chinese Academy of Sciences
- Huaxiang Yin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device manufacturing method
- Patent number 8,664,119
- Issue date Mar 4, 2014
- Institute of Microelectronics, Chinese Academy of Sciences
- Huaxiang Yin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 8,652,891
- Issue date Feb 18, 2014
- The Institute Of Microelectronics Chinese Academy of Science
- Huaxiang Yin
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 8,652,893
- Issue date Feb 18, 2014
- Institute of Microelectronics, Chinese Academy of Sciences
- Huaxiang Yin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing metal gate stack structure in gate-first p...
- Patent number 8,598,002
- Issue date Dec 3, 2013
- Institute of Microelectronics, Chinese Academy of Sciences
- Qiuxia Xu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD OF MANUFACTURING MOS TRANSISTOR WITH STACK OF CASCADED NANOW...
- Publication number 20160233317
- Publication date Aug 11, 2016
- Huaxiang YIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CMOS DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20160086946
- Publication date Mar 24, 2016
- Institute of Microelectronics, Chinese Academy of Sciences
- Huaxiang YIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD OF N-TYPE MOSFET
- Publication number 20150325684
- Publication date Nov 12, 2015
- Institute of Microelectronics, Chinese Academy of Sciences
- Qiuxia Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20150311200
- Publication date Oct 29, 2015
- Institute of Microelectronics, Chinese Academy of Sciences
- Huaxiang YIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING P-TYPE MOSFET
- Publication number 20150295067
- Publication date Oct 15, 2015
- Institute of Microelectronics, Chinese Academy of Sciences
- Qiuxia Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR MANUFACTURING SEMICONDUCTOR DEVICES
- Publication number 20150279745
- Publication date Oct 1, 2015
- Qiuxia Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20150262887
- Publication date Sep 17, 2015
- Institute of Microelectronics, Chinese Academy of Sciences
- Qiuxia Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20150255557
- Publication date Sep 10, 2015
- Institute of Microelectronics, Chinese Academy of Sciences
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Structure and Method for Manufacturing the Same
- Publication number 20150179797
- Publication date Jun 25, 2015
- Huaxiang Yin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20150170974
- Publication date Jun 18, 2015
- Qiuxia Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20150115374
- Publication date Apr 30, 2015
- Institute of Microelectronics, Chinese Academy of Sciences
- Huaxiang Yin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL-METAL GATE CMOS DEVICES AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20150102416
- Publication date Apr 16, 2015
- Institute of Microelectronics, Chinese Academy of Sciences
- Huaxiang Yin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20150048458
- Publication date Feb 19, 2015
- Institute of Microelectronics, Chinese Academy of Sciences
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
P TYPE MOSFET AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20150041925
- Publication date Feb 12, 2015
- Institute of Microelectronics, Chinese Academy of Sciences
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
N-TYPE MOSFET AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20150008537
- Publication date Jan 8, 2015
- Institute of Microelectronics, Chinese Academy of Sciences
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING P-TYPE MOSFET
- Publication number 20150011069
- Publication date Jan 8, 2015
- Institute of Microelectronics, Chinese Academy of Sciences
- Qiuxia Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20140231923
- Publication date Aug 21, 2014
- Institute of Microelectronics, Chinese Academy of Sciences
- Huaxiang Yin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20140191335
- Publication date Jul 10, 2014
- Huaxiang Yin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING N-TYPE MOSFET
- Publication number 20140154853
- Publication date Jun 5, 2014
- Institute of Microelectronics, Chinese Academy of Sciences
- Qiuxia Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20140027783
- Publication date Jan 30, 2014
- Huaxiang Yin
- B82 - NANO-TECHNOLOGY
Information Patent Application
semiconductor structure and method of manufacturing the same
- Publication number 20130285127
- Publication date Oct 31, 2013
- Institute of Microelectronics, Chinese Academy of Sciences
- Huaxiang Yin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method of Manufacturing the Same
- Publication number 20130256808
- Publication date Oct 3, 2013
- Huaxiang Yin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CMOS Device and Method for Manufacturing the Same
- Publication number 20130249012
- Publication date Sep 26, 2013
- Qiuxia Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method of Manufacturing the Same
- Publication number 20130240996
- Publication date Sep 19, 2013
- Huaxiang Yin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20130241004
- Publication date Sep 19, 2013
- Huaxiang Yin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Field-Effect Transistor Structure and Method for Manu...
- Publication number 20130134515
- Publication date May 30, 2013
- Institute of Microelectronics, Chinese Academy of Sciences
- Huajie Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE MANUFACTURING METHOD
- Publication number 20130137264
- Publication date May 30, 2013
- Huaxiang Yin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20130134516
- Publication date May 30, 2013
- Institute of Microelectronics, Chinese Academy of Sciences
- Huajie Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING AND CONTROLLING MOLECULAR LEVEL SiO2 INTERFACE L...
- Publication number 20130130448
- Publication date May 23, 2013
- Qiuxia Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOS DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20130105907
- Publication date May 2, 2013
- Huaxiang Yin
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Method of manufacturing MOS transistor with stack of cascaded nanow...

P type MOSFET

N-type MOSFET and method for manufacturing the same

Methods for manufacturing semiconductor devices

Semiconductor device and method of manufacturing the same

FinFET device and method for manufacturing the same

Dual-metal gate CMOS devices and method for manufacturing the same

CMOS device with improved accuracy of threshold voltage adjustment...

Semiconductor device and method of manufacturing the same

Semiconductor structure and method for manufacturing the same

Semiconductor structure and method for manufacturing the same

Method for manufacturing semiconductor device

Method for manufacturing P-type MOSFET

Method for manufacturing semiconductor device

CMOS device and method for manufacturing the same

Method for manufacturing N-type MOSFET

Semiconductor device with gate stacks having stress and method of m...

Semiconductor structure and method for manufacturing the same

Semiconductor field-effect transistor structure and method for manu...

Method for forming and controlling molecular level SiO2 interface l...

P-type semiconductor device and method for manufacturing the same

Method for manufacturing semiconductor field effect transistor

Semiconductor device and manufacturing method thereof

Method for integration of dual metal gates and dual high-K dielectr...

Method of introducing strain into channel and device manufactured b...

Method for planarizing interlayer dielectric layer

Semiconductor device manufacturing method

Semiconductor device and method of manufacturing the same

Semiconductor device and manufacturing method thereof

Method for manufacturing metal gate stack structure in gate-first p...

Patents Applicationslast 30 patents

METHOD OF MANUFACTURING MOS TRANSISTOR WITH STACK OF CASCADED NANOW...

CMOS DEVICE AND METHOD FOR MANUFACTURING THE SAME

MANUFACTURING METHOD OF N-TYPE MOSFET

FINFET DEVICE AND METHOD FOR MANUFACTURING THE SAME

METHOD FOR MANUFACTURING P-TYPE MOSFET

METHODS FOR MANUFACTURING SEMICONDUCTOR DEVICES

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

Semiconductor Structure and Method for Manufacturing the Same

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME

DUAL-METAL GATE CMOS DEVICES AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

P TYPE MOSFET AND METHOD FOR MANUFACTURING THE SAME

N-TYPE MOSFET AND METHOD FOR MANUFACTURING THE SAME

METHOD FOR MANUFACTURING P-TYPE MOSFET

SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

METHOD FOR MANUFACTURING N-TYPE MOSFET

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

semiconductor structure and method of manufacturing the same

Semiconductor Device and Method of Manufacturing the Same

CMOS Device and Method for Manufacturing the Same

Semiconductor Device and Method of Manufacturing the Same

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

Semiconductor Field-Effect Transistor Structure and Method for Manu...

SEMICONDUCTOR DEVICE MANUFACTURING METHOD

SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME

METHOD FOR FORMING AND CONTROLLING MOLECULAR LEVEL SiO2 INTERFACE L...

MOS DEVICE AND METHOD OF MANUFACTURING THE SAME