Qiyue ZHAO

Person

ZHUHAI CITY, CN

People

Patents Grantslast 30 patents

Information Patent Grant
Nitride-based bidirectional switching device for battery management...
- Patent number 12,155,245
- Issue date Nov 26, 2024
- INNOSCIENCE (SUZHOU) SEMICONDUCTOR CO., LTD.
- Qiyue Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride-based semiconductor bidirectional switching device and meth...
- Patent number 12,125,844
- Issue date Oct 22, 2024
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Qiyue Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with doped semiconductor materials
- Patent number 12,094,714
- Issue date Sep 17, 2024
- INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD.
- Qiyue Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride-based semiconductor device and manufacturing method thereof
- Patent number 12,094,713
- Issue date Sep 17, 2024
- INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD.
- Qiyue Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride-based semiconductor bidirectional switching device and meth...
- Patent number 12,087,763
- Issue date Sep 10, 2024
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Qiyue Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride-based semiconductor bidirectional switching device and meth...
- Patent number 12,074,159
- Issue date Aug 27, 2024
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Qiyue Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride-based semiconductor bidirectional switching device and meth...
- Patent number 12,062,653
- Issue date Aug 13, 2024
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Qiyue Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having improved gate leakage current
- Patent number 12,040,394
- Issue date Jul 16, 2024
- INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD.
- Hang Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 11,929,406
- Issue date Mar 12, 2024
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Qiyue Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structures and methods of manufacturing the same
- Patent number 11,862,722
- Issue date Jan 2, 2024
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Chao Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor package and method for manufacturing the same
- Patent number 11,830,786
- Issue date Nov 28, 2023
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Jingyu Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 11,817,451
- Issue date Nov 14, 2023
- INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD.
- Qiyue Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with asymmetric gate structure
- Patent number 11,769,826
- Issue date Sep 26, 2023
- INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD.
- Hang Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and fabrication method thereof
- Patent number 11,721,692
- Issue date Aug 8, 2023
- INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD.
- Qiyue Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with asymmetric gate structure
- Patent number 11,515,409
- Issue date Nov 29, 2022
- INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD.
- Hang Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 11,456,294
- Issue date Sep 27, 2022
- INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD.
- Qiyue Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming semiconductor
- Patent number 11,322,355
- Issue date May 3, 2022
- INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD.
- Qiyue Zhao
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
NITRIDE-BASED BIDIRECTIONAL SWITCHING DEVICE FOR BATTERY MANAGEMENT...
- Publication number 20240204058
- Publication date Jun 20, 2024
- INNOSCIENCE (SUZHOU) SEMICONDUCTOR CO., LTD.
- Qiyue ZHAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240194772
- Publication date Jun 13, 2024
- INNOSCIENCE (SUZHOU) SEMICONDUCTOR CO., LTD.
- Zhiwen DONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20240162306
- Publication date May 16, 2024
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Qiyue ZHAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE...
- Publication number 20240105812
- Publication date Mar 28, 2024
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Chao YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE-BASED SEMICONDUCTOR CIRCUIT AND METHOD FOR MANUFACTURING TH...
- Publication number 20240088286
- Publication date Mar 14, 2024
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Qiyue ZHAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE...
- Publication number 20240055509
- Publication date Feb 15, 2024
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Chao YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE-BASED BIDIRECTIONAL SWITCHING DEVICE AND METHOD FOR MANUFAC...
- Publication number 20240047568
- Publication date Feb 8, 2024
- INNOSCIENCE (SUZHOU) SEMICONDUCTOR CO., LTD.
- Qiyue ZHAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240038852
- Publication date Feb 1, 2024
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Qiyue ZHAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240038883
- Publication date Feb 1, 2024
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Qiyue ZHAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240038886
- Publication date Feb 1, 2024
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Qiyue ZHAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE-BASED SEMICONDUCTOR BIDIRECTIONAL SWITCHING DEVICE AND METH...
- Publication number 20230369479
- Publication date Nov 16, 2023
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Qiyue ZHAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE-BASED BIDIRECTIONAL SWITCHING DEVICE FOR BATTERY MANAGEMENT...
- Publication number 20230231399
- Publication date Jul 20, 2023
- INNOSCIENCE (SUZHOU) SEMICONDUCTOR CO., LTD.
- Qiyue ZHAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE-BASED BIDIRECTIONAL SWITCHING DEVICE FOR BATTERY MANAGEMENT...
- Publication number 20230231393
- Publication date Jul 20, 2023
- INNOSCIENCE (SUZHOU) SEMICONDUCTOR CO., LTD.
- Qiyue ZHAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20230095367
- Publication date Mar 30, 2023
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Qiyue ZHAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH ASYMMETRIC GATE STRUCTURE
- Publication number 20230058006
- Publication date Feb 23, 2023
- INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD.
- Hang LIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE-BASED SEMICONDUCTOR BIDIRECTIONAL SWITCHING DEVICE AND METH...
- Publication number 20220384418
- Publication date Dec 1, 2022
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Qiyue ZHAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE-BASED SEMICONDUCTOR BIDIRECTIONAL SWITCHING DEVICE AND METH...
- Publication number 20220384423
- Publication date Dec 1, 2022
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Qiyue ZHAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE-BASED SEMICONDUCTOR BIDIRECTIONAL SWITCHING DEVICE AND METH...
- Publication number 20220384425
- Publication date Dec 1, 2022
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Qiyue ZHAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURES AND METHODS OF MANUFACTURING THE SAME
- Publication number 20220384628
- Publication date Dec 1, 2022
- INNOSCIENCE (SUZHOU) SEMICONDUCTOR CO., LTD.
- Jingyu SHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE-BASED SEMICONDUCTOR BIDIRECTIONAL SWITCHING DEVICE AND METH...
- Publication number 20220385203
- Publication date Dec 1, 2022
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Qiyue ZHAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE-BASED SEMICONDUCTOR BIDIRECTIONAL SWITCHING DEVICE AND METH...
- Publication number 20220384424
- Publication date Dec 1, 2022
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Qiyue ZHAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURES AND METHODS OF MANUFACTURING THE SAME
- Publication number 20220376038
- Publication date Nov 24, 2022
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Chao YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20220376061
- Publication date Nov 24, 2022
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Qiyue ZHAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Package and Method for Manufacturing the Same
- Publication number 20220375815
- Publication date Nov 24, 2022
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Jingyu SHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURES AND METHODS OF MANUFACTURING THE SAME
- Publication number 20220310834
- Publication date Sep 29, 2022
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Chao YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20220223417
- Publication date Jul 14, 2022
- INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD.
- Qiyue ZHAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20220223418
- Publication date Jul 14, 2022
- INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD.
- Qiyue ZHAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20220005806
- Publication date Jan 6, 2022
- INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD.
- Qiyue ZHAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH ASYMMETRIC GATE STRUCTURE
- Publication number 20210399124
- Publication date Dec 23, 2021
- INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD.
- Hang LIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING IMPROVED GATE LEAKAGE CURRENT
- Publication number 20210399123
- Publication date Dec 23, 2021
- INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD.
- Hang LIAO
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Nitride-based bidirectional switching device for battery management...

Nitride-based semiconductor bidirectional switching device and meth...

Semiconductor devices with doped semiconductor materials

Nitride-based semiconductor device and manufacturing method thereof

Nitride-based semiconductor bidirectional switching device and meth...

Nitride-based semiconductor bidirectional switching device and meth...

Nitride-based semiconductor bidirectional switching device and meth...

Semiconductor device having improved gate leakage current

Semiconductor device and method for manufacturing the same

Semiconductor device structures and methods of manufacturing the same

Semiconductor package and method for manufacturing the same

Semiconductor device and manufacturing method thereof

Semiconductor device with asymmetric gate structure

Semiconductor device and fabrication method thereof

Semiconductor device with asymmetric gate structure

Semiconductor device and manufacturing method thereof

Method for forming semiconductor

Patents Applicationslast 30 patents

NITRIDE-BASED BIDIRECTIONAL SWITCHING DEVICE FOR BATTERY MANAGEMENT...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE...

NITRIDE-BASED SEMICONDUCTOR CIRCUIT AND METHOD FOR MANUFACTURING TH...

NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE...

NITRIDE-BASED BIDIRECTIONAL SWITCHING DEVICE AND METHOD FOR MANUFAC...

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

NITRIDE-BASED SEMICONDUCTOR BIDIRECTIONAL SWITCHING DEVICE AND METH...

NITRIDE-BASED BIDIRECTIONAL SWITCHING DEVICE FOR BATTERY MANAGEMENT...

NITRIDE-BASED BIDIRECTIONAL SWITCHING DEVICE FOR BATTERY MANAGEMENT...

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE WITH ASYMMETRIC GATE STRUCTURE

NITRIDE-BASED SEMICONDUCTOR BIDIRECTIONAL SWITCHING DEVICE AND METH...

NITRIDE-BASED SEMICONDUCTOR BIDIRECTIONAL SWITCHING DEVICE AND METH...

NITRIDE-BASED SEMICONDUCTOR BIDIRECTIONAL SWITCHING DEVICE AND METH...

SEMICONDUCTOR DEVICE STRUCTURES AND METHODS OF MANUFACTURING THE SAME

NITRIDE-BASED SEMICONDUCTOR BIDIRECTIONAL SWITCHING DEVICE AND METH...

NITRIDE-BASED SEMICONDUCTOR BIDIRECTIONAL SWITCHING DEVICE AND METH...

SEMICONDUCTOR DEVICE STRUCTURES AND METHODS OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

Semiconductor Package and Method for Manufacturing the Same

SEMICONDUCTOR DEVICE STRUCTURES AND METHODS OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF

SEMICONDUCTOR DEVICE WITH ASYMMETRIC GATE STRUCTURE

SEMICONDUCTOR DEVICE HAVING IMPROVED GATE LEAKAGE CURRENT