Qizhi LIU

Person

Lexington, MA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Transistor with wrap-around extrinsic base
- Patent number 12,142,673
- Issue date Nov 12, 2024
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Xinshu Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical bipolar junction transistor and method
- Patent number 11,869,941
- Issue date Jan 9, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Sarah A. McTaggart
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with wrap-around extrinsic base
- Patent number 11,855,195
- Issue date Dec 26, 2023
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Xinshu Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with wrap-around extrinsic base
- Patent number 11,855,196
- Issue date Dec 26, 2023
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Xinshu Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spot-size converters with angled facets
- Patent number 11,719,895
- Issue date Aug 8, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Yusheng Bian
- G02 - OPTICS
Information Patent Grant
Optical antenna for photonic integrated circuit and methods to form...
- Patent number 11,656,409
- Issue date May 23, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Yusheng Bian
- G02 - OPTICS
Information Patent Grant
Optical antenna with reflective material for photonic integrated ci...
- Patent number 11,579,360
- Issue date Feb 14, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Yusheng Bian
- G02 - OPTICS
Information Patent Grant
Angled grating couplers with inclined side edge portions
- Patent number 11,567,266
- Issue date Jan 31, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Judson Holt
- G02 - OPTICS
Information Patent Grant
Integrated circuit structure and method for bipolar transistor stac...
- Patent number 11,488,950
- Issue date Nov 1, 2022
- GLOBALFOUNDRIES U.S. INC.
- Uzma B. Rana
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Virtual bulk in semiconductor on insulator technology
- Patent number 11,374,092
- Issue date Jun 28, 2022
- GLOBALFOUNDRIES U.S. Inc.
- John J. Pekarik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistors with undercut extrinsic base reg...
- Patent number 11,362,201
- Issue date Jun 14, 2022
- GLOBALFOUNDRIES U.S. INC.
- Sarah McTaggart
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistor with marker layer
- Patent number 11,217,685
- Issue date Jan 4, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Herbert Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistors
- Patent number 11,195,925
- Issue date Dec 7, 2021
- GLOBALFOUNDRIES U.S. Inc.
- Judson R. Holt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistor
- Patent number 11,177,347
- Issue date Nov 16, 2021
- GLOBALFOUNDRIES U.S. INC.
- Judson R. Holt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Extrinsic base doping for bipolar junction transistors
- Patent number 11,152,467
- Issue date Oct 19, 2021
- International Business Machines Corporation
- Renata Camillo-Castillo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistor
- Patent number 11,145,725
- Issue date Oct 12, 2021
- GLOBALFOUNDRIES U.S. INC.
- Qizhi Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor structure with overlying gate on polysilicon gate struct...
- Patent number 11,127,831
- Issue date Sep 21, 2021
- GLOBALFOUNDRIES U.S. INC.
- Qizhi Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Junction field effect transistor (JFET) structure and methods to fo...
- Patent number 11,094,834
- Issue date Aug 17, 2021
- GLOBALFOUNDRIES U.S. INC.
- Qizhi Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistors with airgap isolation
- Patent number 11,063,139
- Issue date Jul 13, 2021
- GLOBALFOUNDRIES U.S. INC.
- Vibhor Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Complementary transistor structures formed with the assistance of d...
- Patent number 11,063,140
- Issue date Jul 13, 2021
- GLOBALFOUNDRIES U.S. INC.
- John J. Pekarik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sensors with a front-end-of-line solution-receiving cavity
- Patent number 11,016,055
- Issue date May 25, 2021
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Humberto Campanella-Pineda
- G01 - MEASURING TESTING
Information Patent Grant
Self-aligned base and emitter for a bipolar junction transistor
- Patent number 10,971,597
- Issue date Apr 6, 2021
- GLOBALFOUNDRIES U.S. INC.
- Qizhi Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sensors based on a heterojunction bipolar transistor construction
- Patent number 10,957,787
- Issue date Mar 23, 2021
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Vibhor Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Switch with local silicon on insulator (SOI) and deep trench isolation
- Patent number 10,833,153
- Issue date Nov 10, 2020
- GLOBALFOUNDRIES Inc.
- Qizhi Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistors with an inverted crystalline bou...
- Patent number 10,818,772
- Issue date Oct 27, 2020
- GLOBALFOUNDRIES Inc.
- Vibhor Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tunable breakdown voltage RF FET devices
- Patent number 10,804,364
- Issue date Oct 13, 2020
- International Business Machines Corporation
- Vibhor Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tunable breakdown voltage RF FET devices
- Patent number 10,790,369
- Issue date Sep 29, 2020
- International Business Machines Corporation
- Vibhor Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Extrinsic base doping for bipolar junction transistors
- Patent number 10,784,346
- Issue date Sep 22, 2020
- International Business Machines Corporation
- Renata Camillo-Castillo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar junction transistors with a self-aligned emitter and base
- Patent number 10,777,668
- Issue date Sep 15, 2020
- GLOBALFOUNDRIES Inc.
- Vibhor Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tunable breakdown voltage RF FET devices
- Patent number 10,770,557
- Issue date Sep 8, 2020
- International Business Machines Corporation
- Vibhor Jain
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
TRANSISTOR WITH WRAP-AROUND EXTRINSIC BASE
- Publication number 20250006824
- Publication date Jan 2, 2025
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Xinshu Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR TRANSISTOR WITH STEPPED EMITTER
- Publication number 20240006491
- Publication date Jan 4, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Uppili S. RAGHUNATHAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH WRAP-AROUND EXTRINSIC BASE
- Publication number 20240006517
- Publication date Jan 4, 2024
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Xinshu Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE OVER PATTERNED BURIED POROUS LAYER OF SEMICONDUCTOR MATERIAL
- Publication number 20240006524
- Publication date Jan 4, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Mark D. LEVY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR JUNCTION TRANSISTOR
- Publication number 20230352570
- Publication date Nov 2, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Mark D. Levy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPOT-SIZE CONVERTERS WITH ANGLED FACETS
- Publication number 20230266544
- Publication date Aug 24, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Yusheng Bian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL BIPOLAR JUNCTION TRANSISTOR AND METHOD
- Publication number 20230268394
- Publication date Aug 24, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Sarah A. McTaggart
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH WRAP-AROUND EXTRINSIC BASE
- Publication number 20230129914
- Publication date Apr 27, 2023
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Xinshu Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH WRAP-AROUND EXTRINSIC BASE
- Publication number 20230127768
- Publication date Apr 27, 2023
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Xinshu Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OPTICAL ANTENNA WITH REFLECTIVE MATERIAL FOR PHOTONIC INTEGRATED CI...
- Publication number 20220404547
- Publication date Dec 22, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Yusheng Bian
- G02 - OPTICS
Information Patent Application
OPTICAL ANTENNA FOR PHOTONIC INTEGRATED CIRCUIT AND METHODS TO FORM...
- Publication number 20220291446
- Publication date Sep 15, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Yusheng Bian
- G02 - OPTICS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURE AND METHOD FOR BIPOLAR TRANSISTOR STAC...
- Publication number 20220254774
- Publication date Aug 11, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Uzma B. Rana
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROJUNCTION BIPOLAR TRANSISTORS WITH UNDERCUT EXTRINSIC BASE REG...
- Publication number 20220190145
- Publication date Jun 16, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Sarah McTaggart
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPLEMENTARY TRANSISTOR STRUCTURES FORMED WITH THE ASSISTANCE OF D...
- Publication number 20210098612
- Publication date Apr 1, 2021
- GLOBALFOUNDRIES U.S. Inc.
- John J. Pekarik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VIRTUAL BULK IN SEMICONDUCTOR ON INSULATOR TECHNOLOGY
- Publication number 20210091180
- Publication date Mar 25, 2021
- GLOBALFOUNDRIES INC.
- John J. PEKARIK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROJUNCTION BIPOLAR TRANSISTOR
- Publication number 20210091189
- Publication date Mar 25, 2021
- GLOBALFOUNDRIES INC.
- Qizhi LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR STRUCTURE WITH OVERLYING GATE ON POLYSILICON GATE STRUCT...
- Publication number 20210091200
- Publication date Mar 25, 2021
- GLOBALFOUNDRIES U.S. Inc.
- Qizhi Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROJUNCTION BIPOLAR TRANSISTOR WITH MARKER LAYER
- Publication number 20210091214
- Publication date Mar 25, 2021
- GLOBALFOUNDRIES U.S. Inc.
- Herbert HO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
JUNCTION FIELD EFFECT TRANSISTOR (JFET) STRUCTURE AND METHODS TO FO...
- Publication number 20210091236
- Publication date Mar 25, 2021
- GLOBALFOUNDRIES U.S. Inc.
- Qizhi Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROJUNCTION BIPOLAR TRANSISTORS
- Publication number 20210091195
- Publication date Mar 25, 2021
- GLOBALFOUNDRIES U.S. Inc.
- Judson R. HOLT
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROJUNCTION BIPOLAR TRANSISTOR
- Publication number 20210091183
- Publication date Mar 25, 2021
- GLOBALFOUNDRIES INC.
- Judson R. HOLT
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROJUNCTION BIPOLAR TRANSISTORS WITH AIRGAP ISOLATION
- Publication number 20210091213
- Publication date Mar 25, 2021
- GLOBALFOUNDRIES U.S. Inc.
- Vibhor Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED BASE AND EMITTER FOR A BIPOLAR JUNCTION TRANSISTOR
- Publication number 20210066474
- Publication date Mar 4, 2021
- GLOBALFOUNDRIES INC.
- Qizhi Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SENSORS WITH A FRONT-END-OF-LINE SOLUTION-RECEIVING CAVITY
- Publication number 20210010971
- Publication date Jan 14, 2021
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Humberto Campanella-Pineda
- G01 - MEASURING TESTING
Information Patent Application
SENSORS BASED ON A HETEROJUNCTION BIPOLAR TRANSISTOR CONSTRUCTION
- Publication number 20200295165
- Publication date Sep 17, 2020
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Vibhor Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR JUNCTION TRANSISTORS WITH A SELF-ALIGNED EMITTER AND BASE
- Publication number 20200066885
- Publication date Feb 27, 2020
- GLOBALFOUNDRIES INC.
- Vibhor Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EXTRINSIC BASE DOPING FOR BIPOLAR JUNCTION TRANSISTORS
- Publication number 20190341454
- Publication date Nov 7, 2019
- International Business Machines Corporation
- Renata Camillo-Castillo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EXTRINSIC BASE DOPING FOR BIPOLAR JUNCTION TRANSISTORS
- Publication number 20190341455
- Publication date Nov 7, 2019
- International Business Machines Corporation
- Renata Camillo-Castillo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROJUNCTION BIPOLAR TRANSISTORS WITH AN INVERTED CRYSTALLINE BOU...
- Publication number 20190326411
- Publication date Oct 24, 2019
- GLOBALFOUNDRIES INC.
- Vibhor Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CASCODE HETEROJUNCTION BIPOLAR TRANSISTORS
- Publication number 20190252530
- Publication date Aug 15, 2019
- GLOBALFOUNDRIES INC.
- Vibhor Jain
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Transistor with wrap-around extrinsic base

Vertical bipolar junction transistor and method

Transistor with wrap-around extrinsic base

Transistor with wrap-around extrinsic base

Spot-size converters with angled facets

Optical antenna for photonic integrated circuit and methods to form...

Optical antenna with reflective material for photonic integrated ci...

Angled grating couplers with inclined side edge portions

Integrated circuit structure and method for bipolar transistor stac...

Virtual bulk in semiconductor on insulator technology

Heterojunction bipolar transistors with undercut extrinsic base reg...

Heterojunction bipolar transistor with marker layer

Heterojunction bipolar transistors

Heterojunction bipolar transistor

Extrinsic base doping for bipolar junction transistors

Heterojunction bipolar transistor

Transistor structure with overlying gate on polysilicon gate struct...

Junction field effect transistor (JFET) structure and methods to fo...

Heterojunction bipolar transistors with airgap isolation

Complementary transistor structures formed with the assistance of d...

Sensors with a front-end-of-line solution-receiving cavity

Self-aligned base and emitter for a bipolar junction transistor

Sensors based on a heterojunction bipolar transistor construction

Switch with local silicon on insulator (SOI) and deep trench isolation

Heterojunction bipolar transistors with an inverted crystalline bou...

Tunable breakdown voltage RF FET devices

Tunable breakdown voltage RF FET devices

Extrinsic base doping for bipolar junction transistors

Bipolar junction transistors with a self-aligned emitter and base

Tunable breakdown voltage RF FET devices

Patents Applicationslast 30 patents

TRANSISTOR WITH WRAP-AROUND EXTRINSIC BASE

BIPOLAR TRANSISTOR WITH STEPPED EMITTER

TRANSISTOR WITH WRAP-AROUND EXTRINSIC BASE

DEVICE OVER PATTERNED BURIED POROUS LAYER OF SEMICONDUCTOR MATERIAL

BIPOLAR JUNCTION TRANSISTOR

SPOT-SIZE CONVERTERS WITH ANGLED FACETS

VERTICAL BIPOLAR JUNCTION TRANSISTOR AND METHOD

TRANSISTOR WITH WRAP-AROUND EXTRINSIC BASE

TRANSISTOR WITH WRAP-AROUND EXTRINSIC BASE

OPTICAL ANTENNA WITH REFLECTIVE MATERIAL FOR PHOTONIC INTEGRATED CI...

OPTICAL ANTENNA FOR PHOTONIC INTEGRATED CIRCUIT AND METHODS TO FORM...

INTEGRATED CIRCUIT STRUCTURE AND METHOD FOR BIPOLAR TRANSISTOR STAC...

HETEROJUNCTION BIPOLAR TRANSISTORS WITH UNDERCUT EXTRINSIC BASE REG...

COMPLEMENTARY TRANSISTOR STRUCTURES FORMED WITH THE ASSISTANCE OF D...

VIRTUAL BULK IN SEMICONDUCTOR ON INSULATOR TECHNOLOGY

HETEROJUNCTION BIPOLAR TRANSISTOR

TRANSISTOR STRUCTURE WITH OVERLYING GATE ON POLYSILICON GATE STRUCT...

HETEROJUNCTION BIPOLAR TRANSISTOR WITH MARKER LAYER

JUNCTION FIELD EFFECT TRANSISTOR (JFET) STRUCTURE AND METHODS TO FO...

HETEROJUNCTION BIPOLAR TRANSISTORS

HETEROJUNCTION BIPOLAR TRANSISTOR

HETEROJUNCTION BIPOLAR TRANSISTORS WITH AIRGAP ISOLATION

SELF-ALIGNED BASE AND EMITTER FOR A BIPOLAR JUNCTION TRANSISTOR

SENSORS WITH A FRONT-END-OF-LINE SOLUTION-RECEIVING CAVITY

SENSORS BASED ON A HETEROJUNCTION BIPOLAR TRANSISTOR CONSTRUCTION

BIPOLAR JUNCTION TRANSISTORS WITH A SELF-ALIGNED EMITTER AND BASE

EXTRINSIC BASE DOPING FOR BIPOLAR JUNCTION TRANSISTORS

EXTRINSIC BASE DOPING FOR BIPOLAR JUNCTION TRANSISTORS

HETEROJUNCTION BIPOLAR TRANSISTORS WITH AN INVERTED CRYSTALLINE BOU...

CASCODE HETEROJUNCTION BIPOLAR TRANSISTORS