Quanxin Yun

Person

Beijing, CN

People

Patents Grantslast 30 patents

Information Patent Grant
Preparation method of a germanium-based schottky junction
- Patent number 9,484,208
- Issue date Nov 1, 2016
- Peking University
- Ru Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for processing gate dielectric layer deposited on germanium-...
- Patent number 9,312,126
- Issue date Apr 12, 2016
- Peking University
- Ru Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained channel field effect transistor and the method for fabrica...
- Patent number 8,673,722
- Issue date Mar 18, 2014
- Peking University
- Ru Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 8,541,847
- Issue date Sep 24, 2013
- Peking University
- Xia An
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for introducing channel stress and field effect transistor f...
- Patent number 8,450,155
- Issue date May 28, 2013
- Peking University
- Ru Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a tunneling field-effect transistor
- Patent number 8,288,238
- Issue date Oct 16, 2012
- Peking University
- Ru Huang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
PREPARATION METHOD OF A GERMANIUM-BASED SCHOTTKY JUNCTION
- Publication number 20160133475
- Publication date May 12, 2016
- Peking University
- Ru Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PROCESSING GATE DIELECTRIC LAYER DEPOSITED ON GERMANIUM-...
- Publication number 20150179439
- Publication date Jun 25, 2015
- Peking University
- Ru Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Strained Channel Field Effect Transistor and the Method for Fabrica...
- Publication number 20130043515
- Publication date Feb 21, 2013
- Ru Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION METHOD OF GERMANIUM-BASED N-TYPE SCHOTTKY FIELD EFFECT...
- Publication number 20120289004
- Publication date Nov 15, 2012
- Peking University
- Ru Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20120187495
- Publication date Jul 26, 2012
- Xia An
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING A TUNNELING FIELD-EFFECT TRANSISTOR
- Publication number 20120115297
- Publication date May 10, 2012
- Peking University
- Ru Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR INTRODUCING CHANNEL STRESS AND FIELD EFFECT TRANSISTOR F...
- Publication number 20120032239
- Publication date Feb 9, 2012
- Ru Huang
- H01 - BASIC ELECTRIC ELEMENTS

Quanxin Yun

Person

Patents Grantslast 30 patents

Preparation method of a germanium-based schottky junction

Method for processing gate dielectric layer deposited on germanium-...

Strained channel field effect transistor and the method for fabrica...

Semiconductor device and method for fabricating the same

Method for introducing channel stress and field effect transistor f...

Method for fabricating a tunneling field-effect transistor

Patents Applicationslast 30 patents

PREPARATION METHOD OF A GERMANIUM-BASED SCHOTTKY JUNCTION

METHOD FOR PROCESSING GATE DIELECTRIC LAYER DEPOSITED ON GERMANIUM-...

Strained Channel Field Effect Transistor and the Method for Fabrica...

FABRICATION METHOD OF GERMANIUM-BASED N-TYPE SCHOTTKY FIELD EFFECT...

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

METHOD FOR FABRICATING A TUNNELING FIELD-EFFECT TRANSISTOR

METHOD FOR INTRODUCING CHANNEL STRESS AND FIELD EFFECT TRANSISTOR F...