Quesnell Hartmann

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Champaign, IL, US

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Patents Grantslast 30 patents

Information Patent Grant
Heterojunction bipolar transistor with tensile graded carbon-doped...
- Patent number 6,525,349
- Issue date Feb 25, 2003
- Epiworks, Inc.
- Quesnell Hartmann
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Transistor with intentionally tensile mismatched base layer
- Publication number 20030042503
- Publication date Mar 6, 2003
- Quesnell Hartmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROJUNCTION BIPOLAR TRANSISTOR WITH TENSILE GRADED CARBON-DOPED...
- Publication number 20020190272
- Publication date Dec 19, 2002
- Quesnell Hartmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
InP heterojunction bipolar transistor with intentionally compressiv...
- Publication number 20020190271
- Publication date Dec 19, 2002
- Quesnell Hartmann
- H01 - BASIC ELECTRIC ELEMENTS