Qun Gao

Person

Clifton Park, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Device with highly active acceptor doping and method of production...
- Patent number 10,886,178
- Issue date Jan 5, 2021
- GLOBALFOUNDRIES Inc.
- Tek Po Rinus Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin reveal forming STI regions having convex shape between fins
- Patent number 10,832,965
- Issue date Nov 10, 2020
- GLOBALFOUNDRIES Inc.
- Yiheng Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming gate structure with undercut region and resulting...
- Patent number 10,727,133
- Issue date Jul 28, 2020
- GLOBALFOUNDRIES Inc.
- Qun Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin-type transistors with spacers on the gates
- Patent number 10,636,894
- Issue date Apr 28, 2020
- GLOBALFOUNDRIES Inc.
- Yanping Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Composite sacrificial gate with etch selective layer
- Patent number 10,593,555
- Issue date Mar 17, 2020
- GLOBALFOUNDRIES Inc.
- Qun Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods, apparatus, and system for forming epitaxial formations wit...
- Patent number 10,529,831
- Issue date Jan 7, 2020
- GLOBALFOUNDRIES Inc.
- Qun Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diffused contact extension dopants in a transistor device
- Patent number 10,453,754
- Issue date Oct 22, 2019
- GLOBALFOUNDRIES Inc.
- Jianwei Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric formation of epi semiconductor material in source/drain...
- Patent number 10,269,932
- Issue date Apr 23, 2019
- GLOBALFOUNDRIES Inc.
- Ankur Arya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of making FinFET device comprising a piezoelectric liner fo...
- Patent number 10,256,152
- Issue date Apr 9, 2019
- GLOBALFOUNDRIES Inc.
- Qun Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
On-chip resistors with a tunable temperature coefficient of resistance
- Patent number 10,014,364
- Issue date Jul 3, 2018
- GLOBALFOUNDRIES Inc.
- Qun Gao
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD OF FORMING GATE STRUCTURE WITH UNDERCUT REGION AND RESULTING...
- Publication number 20200091005
- Publication date Mar 19, 2020
- GLOBALFOUNDRIES INC.
- Qun Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE WITH HIGHLY ACTIVE ACCEPTOR DOPING AND METHOD OF PRODUCTION...
- Publication number 20200066593
- Publication date Feb 27, 2020
- GLOBALFOUNDRIES INC.
- Tek Po Rinus LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE SKIRT OXIDATION FOR IMPROVED FINFET PERFORMANCE AND METHOD FOR...
- Publication number 20190305105
- Publication date Oct 3, 2019
- GLOBALFOUNDRIES INC.
- Qun GAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPOSITE SACRIFICIAL GATE WITH ETCH SELECTIVE LAYER
- Publication number 20190295852
- Publication date Sep 26, 2019
- GLOBALFOUNDRIES INC.
- Qun GAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN-TYPE TRANSISTORS WITH SPACERS ON THE GATES
- Publication number 20190280105
- Publication date Sep 12, 2019
- GLOBALFOUNDRIES INC.
- Yanping Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN REVEAL FORMING STI REGIONS HAVING CONVEX SHAPE BETWEEN FINS
- Publication number 20190214308
- Publication date Jul 11, 2019
- GLOBALFOUNDRIES INC.
- Yiheng Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET DEVICE COMPRISING A PIEZOELECTRIC LINER FOR GENERATING A SUR...
- Publication number 20190027601
- Publication date Jan 24, 2019
- GLOBALFOUNDRIES INC.
- Qun Gao
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Device with highly active acceptor doping and method of production...

Fin reveal forming STI regions having convex shape between fins

Method of forming gate structure with undercut region and resulting...

Fin-type transistors with spacers on the gates

Composite sacrificial gate with etch selective layer

Methods, apparatus, and system for forming epitaxial formations wit...

Diffused contact extension dopants in a transistor device

Asymmetric formation of epi semiconductor material in source/drain...

Methods of making FinFET device comprising a piezoelectric liner fo...

On-chip resistors with a tunable temperature coefficient of resistance

Patents Applicationslast 30 patents

METHOD OF FORMING GATE STRUCTURE WITH UNDERCUT REGION AND RESULTING...

DEVICE WITH HIGHLY ACTIVE ACCEPTOR DOPING AND METHOD OF PRODUCTION...

GATE SKIRT OXIDATION FOR IMPROVED FINFET PERFORMANCE AND METHOD FOR...

COMPOSITE SACRIFICIAL GATE WITH ETCH SELECTIVE LAYER

FIN-TYPE TRANSISTORS WITH SPACERS ON THE GATES

FIN REVEAL FORMING STI REGIONS HAVING CONVEX SHAPE BETWEEN FINS

FINFET DEVICE COMPRISING A PIEZOELECTRIC LINER FOR GENERATING A SUR...