Rachael Myers-Ward

Person

Springfield, VA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Graphene-based PPB level sulfur detector
- Patent number 11,789,004
- Issue date Oct 17, 2023
- The Government of the United States of America, as represented by the Secreta...
- Evgeniya H. Lock
- G01 - MEASURING TESTING
Information Patent Grant
Method for graphene functionalization that preserves characteristic...
- Patent number 11,572,281
- Issue date Feb 7, 2023
- The Government of the United States of America, as represented by the Secreta...
- Evgeniya H. Lock
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Graphene-based PPB level sulfur detector in fuels
- Patent number 10,976,297
- Issue date Apr 13, 2021
- The Government of the United States of America, as represented by the Secreta...
- Evgeniya H. Lock
- G01 - MEASURING TESTING
Information Patent Grant
Plasma modified epitaxial fabricated graphene on SiC for electroche...
- Patent number 10,928,351
- Issue date Feb 23, 2021
- The Government of the United States of America, as represented by the Secreta...
- Scott A. Trammell
- G01 - MEASURING TESTING
Information Patent Grant
Silicon carbide microelectromechanical structure, device, and method
- Patent number 10,717,642
- Issue date Jul 21, 2020
- The Government of the United States of America, as represented by the Secreta...
- Francis J. Kub
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
Silicon carbide microelectromechanical structure, device, and method
- Patent number 10,589,983
- Issue date Mar 17, 2020
- The Government of the United States of America, as represented by the Secreta...
- Francis J. Kub
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
Growth of crystalline materials on two-dimensional inert materials
- Patent number 10,494,738
- Issue date Dec 3, 2019
- The Government of the United States of America, as represented by the Secreta...
- Neeraj Nepal
- C30 - CRYSTAL GROWTH
Information Patent Grant
Material structure and method for deep silicon carbide etching
- Patent number 10,343,900
- Issue date Jul 9, 2019
- The Government of the United States of America, as represented by the Secreta...
- Eugene A. Imhoff
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
Whole angle MEMS gyroscope on hexagonal crystal substrate
- Patent number 10,317,210
- Issue date Jun 11, 2019
- The Charles Stark Draper Laboratory, Inc.
- Francis J. Kub
- G01 - MEASURING TESTING
Information Patent Grant
Growth of crystalline materials on two-dimensional inert materials
- Patent number 10,266,963
- Issue date Apr 23, 2019
- The United States of America, as represented by the Secretary of the Navy
- Neeraj Nepal
- C30 - CRYSTAL GROWTH
Information Patent Grant
Reduction of basal plane dislocations in epitaxial SiC using an in-...
- Patent number 10,256,094
- Issue date Apr 9, 2019
- The Government of the United States of America, as represented by the Secreta...
- Rachael L. Myers-Ward
- C30 - CRYSTAL GROWTH
Information Patent Grant
Reduction of basal plane dislocations in epitaxial SiC using an in-...
- Patent number 10,256,090
- Issue date Apr 9, 2019
- The United States of America, as represented by the Secretary of the Navy
- Rachael L. Myers-Ward
- C30 - CRYSTAL GROWTH
Information Patent Grant
Reduction of basal plane dislocations in epitaxial SiC
- Patent number 9,464,366
- Issue date Oct 11, 2016
- The United States of America, as represented by the Secretary of the Navy
- Rachael L Myers-Ward
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method of producing epitaxial layers with low basal plane dislocati...
- Patent number 8,652,255
- Issue date Feb 18, 2014
- The United States of America, as represented by the Secretary of the Navy
- Robert E Stahlbush
- C30 - CRYSTAL GROWTH
Information Patent Grant
Tracking carbon to silicon ratio in situ during silicon carbide growth
- Patent number 8,603,243
- Issue date Dec 10, 2013
- The United States of America, as represented by the Secretary of the Navy
- Brenda L VanMil
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
SYSTEMS AND METHODS FOR GROWTH OF SILICON CARBIDE OVER A LAYER COMP...
- Publication number 20240153763
- Publication date May 9, 2024
- Massachusetts Institute of Technology
- Rachael L. Myers-Ward
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GRAPHENE-BASED PPB LEVEL SULFUR DETECTOR
- Publication number 20210231633
- Publication date Jul 29, 2021
- The Government of the United States of America, as represented by the Secreta...
- Evgeniya H. Lock
- G01 - MEASURING TESTING
Information Patent Application
SYSTEMS AND METHODS FOR GROWTH OF SILICON CARBIDE OVER A LAYER COMP...
- Publication number 20210125826
- Publication date Apr 29, 2021
- Massachusetts Institute of Technology
- Rachael L. Myers-Ward
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE STRUCTURE, DEVICE, AND METHOD
- Publication number 20200407213
- Publication date Dec 31, 2020
- The Government of the United States of America, as represented by the Secreta...
- Francis J. Kub
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Application
Growth of Crystalline Materials on Two-Dimensional Inert Materials
- Publication number 20190161887
- Publication date May 30, 2019
- The Government of the United States of America, as represented by the Secreta...
- Neeraj Nepal
- C30 - CRYSTAL GROWTH
Information Patent Application
GRAPHENE-BASED PPB LEVEL SULFUR DETECTOR IN FUELS
- Publication number 20190107524
- Publication date Apr 11, 2019
- The Government of the United States of America, as represented by the Secreta...
- Evgeniya H. Lock
- G01 - MEASURING TESTING
Information Patent Application
Plasma Modified Epitaxial Fabricated Graphene on SiC for Electroche...
- Publication number 20190033247
- Publication date Jan 31, 2019
- The Government of the United States of America, as represented by the Secreta...
- Scott A. Trammell
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE STRUCTURE, DEVICE, AND METHOD
- Publication number 20180244513
- Publication date Aug 30, 2018
- The Government of the United States of America, as represented by the Secreta...
- Francis J. Kub
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Application
Method for Graphene Functionalization that Preserves Characteristic...
- Publication number 20180215623
- Publication date Aug 2, 2018
- The Government of the United States of America, as represented by the Secreta...
- Evgeniya H. Lock
- B82 - NANO-TECHNOLOGY
Information Patent Application
Silicon Carbide Microelectromechanical Structure, Device, and Method
- Publication number 20180086625
- Publication date Mar 29, 2018
- The Government of the United States of America, as represented by the Secreta...
- Francis J. KUB
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Application
Material Structure and Method for Deep Silicon Carbide Etching
- Publication number 20180065844
- Publication date Mar 8, 2018
- The Government of the United States of America, as represented by the Secreta...
- Eugene A. IMHOFF
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Application
WHOLE ANGLE MEMS GYROSCOPE ON HEXAGONAL CRYSTAL SUBSTRATE
- Publication number 20160341552
- Publication date Nov 24, 2016
- The Charles Stark Draper Laboratory, Inc.
- Francis J. Kub
- G01 - MEASURING TESTING
Information Patent Application
Growth of Crystalline Materials on Two-Dimensional Inert Materials
- Publication number 20140255705
- Publication date Sep 11, 2014
- The Government of the United States of America, as represented by the Secreta...
- Neeraj Nepal
- C30 - CRYSTAL GROWTH
Information Patent Application
REDUCTION OF BASAL PLANE DISLOCATIONS IN EPITAXIAL SiC USING AN IN-...
- Publication number 20140190399
- Publication date Jul 10, 2014
- THE GOVERNMENT OF THE UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETA...
- Rachael L. Myers-Ward
- C30 - CRYSTAL GROWTH
Information Patent Application
REDUCTION OF BASAL PLANE DISLOCATIONS IN EPITAXIAL SiC USING AN IN-...
- Publication number 20140193965
- Publication date Jul 10, 2014
- THE GOVERNMENT OF THE UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETA...
- Rachael L. Myers-Ward
- C30 - CRYSTAL GROWTH
Information Patent Application
REDUCTION OF BASAL PLANE DISLOCATIONS IN EPITAXIAL SIC
- Publication number 20110045281
- Publication date Feb 24, 2011
- THE GOVERNMENT OF THE UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETA...
- Rachael L. Myers-Ward
- C30 - CRYSTAL GROWTH
Information Patent Application
TRACKING CARBON TO SILICON RATIO IN SITU DURING SILICON CARBIDE GROWTH
- Publication number 20100024719
- Publication date Feb 4, 2010
- THE GOVERNMENT OF THE UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETA...
- Brenda L. VanMil
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF PRODUCING EPITAXIAL LAYERS WITH LOW BASAL PLANE DISLOCATI...
- Publication number 20090114148
- Publication date May 7, 2009
- THE GOVERNMENT OF THE UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETA...
- Robert E. Stahlbush
- C30 - CRYSTAL GROWTH

Rachael Myers-Ward

Person

Patents Grantslast 30 patents

Graphene-based PPB level sulfur detector

Method for graphene functionalization that preserves characteristic...

Graphene-based PPB level sulfur detector in fuels

Plasma modified epitaxial fabricated graphene on SiC for electroche...

Silicon carbide microelectromechanical structure, device, and method

Silicon carbide microelectromechanical structure, device, and method

Growth of crystalline materials on two-dimensional inert materials

Material structure and method for deep silicon carbide etching

Whole angle MEMS gyroscope on hexagonal crystal substrate

Growth of crystalline materials on two-dimensional inert materials

Reduction of basal plane dislocations in epitaxial SiC using an in-...

Reduction of basal plane dislocations in epitaxial SiC using an in-...

Reduction of basal plane dislocations in epitaxial SiC

Method of producing epitaxial layers with low basal plane dislocati...

Tracking carbon to silicon ratio in situ during silicon carbide growth

Patents Applicationslast 30 patents

SYSTEMS AND METHODS FOR GROWTH OF SILICON CARBIDE OVER A LAYER COMP...

GRAPHENE-BASED PPB LEVEL SULFUR DETECTOR

SYSTEMS AND METHODS FOR GROWTH OF SILICON CARBIDE OVER A LAYER COMP...

SILICON CARBIDE STRUCTURE, DEVICE, AND METHOD

Growth of Crystalline Materials on Two-Dimensional Inert Materials

GRAPHENE-BASED PPB LEVEL SULFUR DETECTOR IN FUELS

Plasma Modified Epitaxial Fabricated Graphene on SiC for Electroche...

SILICON CARBIDE STRUCTURE, DEVICE, AND METHOD

Method for Graphene Functionalization that Preserves Characteristic...

Silicon Carbide Microelectromechanical Structure, Device, and Method

Material Structure and Method for Deep Silicon Carbide Etching

WHOLE ANGLE MEMS GYROSCOPE ON HEXAGONAL CRYSTAL SUBSTRATE

Growth of Crystalline Materials on Two-Dimensional Inert Materials

REDUCTION OF BASAL PLANE DISLOCATIONS IN EPITAXIAL SiC USING AN IN-...

REDUCTION OF BASAL PLANE DISLOCATIONS IN EPITAXIAL SiC USING AN IN-...

REDUCTION OF BASAL PLANE DISLOCATIONS IN EPITAXIAL SIC

TRACKING CARBON TO SILICON RATIO IN SITU DURING SILICON CARBIDE GROWTH

METHOD OF PRODUCING EPITAXIAL LAYERS WITH LOW BASAL PLANE DISLOCATI...