Raghuveer Mallavarpu

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Boxborough, MA, US

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Patents Grantslast 30 patents

Information Patent Grant
Field effect transistor (FET) structure with integrated gate connec...
- Patent number 10,593,665
- Issue date Mar 17, 2020
- Raytheon Company
- John P. Bettencourt
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Field effect transistor (FET) structure with integrated gate connec...
- Patent number 10,103,137
- Issue date Oct 16, 2018
- Raytheon Company
- John P. Bettencourt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor (FET) structure with integrated gate connec...
- Patent number 9,799,645
- Issue date Oct 24, 2017
- Raytheon Company
- John P. Bettencourt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spatial field power combiner having offset coaxial to planar transm...
- Patent number 5,142,253
- Issue date Aug 25, 1992
- Raytheon Company
- Raghuveer Mallavarpu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Axially coupled gyrotron and gyro TWTA
- Patent number 4,897,609
- Issue date Jan 30, 1990
- Raytheon Company
- Raghuveer Mallavarpu
- H03 - BASIC ELECTRONIC CIRCUITRY

Patents Applicationslast 30 patents

Information Patent Application
FIELD EFFECT TRANSISTOR (FET) STRUCTURE WITH INTEGRATED GATE CONNEC...
- Publication number 20190019790
- Publication date Jan 17, 2019
- Raytheon Company
- John P. Bettencourt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR (FET) STRUCTURE WITH INTEGRATED GATE CONNEC...
- Publication number 20170200713
- Publication date Jul 13, 2017
- Raytheon Company
- John P. Bettencourt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR (FET) STRUCTURE WITH INTEGRATED GATE CONNEC...
- Publication number 20170148783
- Publication date May 25, 2017
- Raytheon Company
- John P. Bettencourt
- H01 - BASIC ELECTRIC ELEMENTS