Rainer Pelzer

Person

Villach, AT

People

Patents Grantslast 30 patents

Information Patent Grant
Multi-chip device, method of manufacturing a multi-chip device, and...
- Patent number 11,488,921
- Issue date Nov 1, 2022
- Infineon Technologies AG
- Ali Roshanghias
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device power metallization layer with stress-relievin...
- Patent number 11,276,624
- Issue date Mar 15, 2022
- Infineon Technologies Austria AG
- Michael Nelhiebel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Terminal structure of a power semiconductor device
- Patent number 11,239,188
- Issue date Feb 1, 2022
- Infineon Technologies AG
- Markus Zundel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Barrier for power metallization in semiconductor devices
- Patent number 11,127,693
- Issue date Sep 21, 2021
- Infineon Technologies AG
- Johann Gatterbauer
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
Semiconductor device having a die pad with a dam-like configuration
- Patent number 11,031,321
- Issue date Jun 8, 2021
- Infineon Technologies AG
- Rainer Pelzer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device having a power metal...
- Patent number 10,978,395
- Issue date Apr 13, 2021
- Infineon Technologies Austria AG
- Ravi Keshav Joshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power metallization structure for semiconductor devices
- Patent number 10,734,320
- Issue date Aug 4, 2020
- Infineon Technologies Austria AG
- Ravi Keshav Joshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with compressive interlayer
- Patent number 10,700,019
- Issue date Jun 30, 2020
- Infineon Technologies AG
- Marianne Mataln
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
Semiconductor device with compressive interlayer
- Patent number 10,658,309
- Issue date May 19, 2020
- Infineon Technologies AG
- Marianne Mataln
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
Compressive interlayer having a defined crack-stop edge extension
- Patent number 10,304,782
- Issue date May 28, 2019
- Infineon Technologies AG
- Marianne Mataln
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Devices for providing an electrical connection
- Patent number 8,884,407
- Issue date Nov 11, 2014
- Infineon Technologies AG
- Michael Sternad
- G02 - OPTICS

Patents Applicationslast 30 patents

Information Patent Application
Semiconductor Device Power Metallization Layer with Stress-Relievin...
- Publication number 20210183732
- Publication date Jun 17, 2021
- Michael Nelhiebel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multi-Chip Device, Method of Manufacturing a Multi-Chip Device, and...
- Publication number 20210098410
- Publication date Apr 1, 2021
- INFINEON TECHNOLOGIES AG
- Ali Roshanghias
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Manufacturing a Semiconductor Device Having a Power Metal...
- Publication number 20200335448
- Publication date Oct 22, 2020
- Ravi Keshav Joshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Having a Die Pad with a Dam-Like Configuration
- Publication number 20200294894
- Publication date Sep 17, 2020
- Rainer Pelzer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Barrier for Power Metallization in Semiconductor Devices
- Publication number 20200111754
- Publication date Apr 9, 2020
- Johann Gatterbauer
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Application
Power Metallization Structure for Semiconductor Devices
- Publication number 20200035610
- Publication date Jan 30, 2020
- Infineon Technologies Austria AG
- Ravi Keshav Joshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Compressive Interlayer
- Publication number 20190273050
- Publication date Sep 5, 2019
- Marianne Mataln
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Compressive Interlayer Having a Defined Crack-Stop Edge Extension
- Publication number 20190067209
- Publication date Feb 28, 2019
- INFINEON TECHNOLOGIES AG
- Marianne Mataln
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Terminal Structure of a Power Semiconductor Device
- Publication number 20180145045
- Publication date May 24, 2018
- INFINEON TECHNOLOGIES AG
- Markus Zundel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD, A SEMICONDUCTOR DEVICE AND A LAYER ARRANGEMENT
- Publication number 20170053879
- Publication date Feb 23, 2017
- INFINEON TECHNOLOGIES AG
- SRINIVASA REDDY YEDURU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Devices and Methods for Providing an Electrical Connection
- Publication number 20140151905
- Publication date Jun 5, 2014
- INFINEON TECHNOLOGIES AG
- Michael Sternad
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR

Rainer Pelzer

Person

Patents Grantslast 30 patents

Multi-chip device, method of manufacturing a multi-chip device, and...

Semiconductor device power metallization layer with stress-relievin...

Terminal structure of a power semiconductor device

Barrier for power metallization in semiconductor devices

Semiconductor device having a die pad with a dam-like configuration

Method of manufacturing a semiconductor device having a power metal...

Power metallization structure for semiconductor devices

Semiconductor device with compressive interlayer

Semiconductor device with compressive interlayer

Compressive interlayer having a defined crack-stop edge extension

Devices for providing an electrical connection

Patents Applicationslast 30 patents

Semiconductor Device Power Metallization Layer with Stress-Relievin...

Multi-Chip Device, Method of Manufacturing a Multi-Chip Device, and...

Method of Manufacturing a Semiconductor Device Having a Power Metal...

Semiconductor Device Having a Die Pad with a Dam-Like Configuration

Barrier for Power Metallization in Semiconductor Devices

Power Metallization Structure for Semiconductor Devices

Semiconductor Device with Compressive Interlayer

Compressive Interlayer Having a Defined Crack-Stop Edge Extension

Terminal Structure of a Power Semiconductor Device

METHOD, A SEMICONDUCTOR DEVICE AND A LAYER ARRANGEMENT

Devices and Methods for Providing an Electrical Connection