Rainer Yen-Chieh Huang

Person

Hsinchu, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Method of forming ferroelectric memory device
- Patent number 12,274,068
- Issue date Apr 8, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Rainer Yen-Chieh Huang
Information Patent Grant
Ferroelectric memory device, manufacturing method of the ferroelect...
- Patent number 12,238,932
- Issue date Feb 25, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Rainer Yen-Chieh Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked ferroelectric structure
- Patent number 12,232,329
- Issue date Feb 18, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Rainer Yen-Chieh Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked ferroelectric structure
- Patent number 12,207,474
- Issue date Jan 21, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Rainer Yen-Chieh Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Carrier barrier layer for tuning a threshold voltage of a ferroelec...
- Patent number 12,154,965
- Issue date Nov 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Rainer Yen-Chieh Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cocktail layer over gate dielectric layer of FET FeRAM
- Patent number 12,127,411
- Issue date Oct 22, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Rainer Yen-Chieh Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Capping layer over FET FeRAM to increase charge mobility
- Patent number 12,114,507
- Issue date Oct 8, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Rainer Yen-Chieh Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Annealed seed layer to improve ferroelectric properties of memory l...
- Patent number 11,917,831
- Issue date Feb 27, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Song-Fu Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cocktail layer over gate dielectric layer of FET FeRAM
- Patent number 11,818,896
- Issue date Nov 14, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Rainer Yen-Chieh Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Organic gate TFT-type stress sensors and method of making and using...
- Patent number 11,778,914
- Issue date Oct 3, 2023
- Taiwan Semiconductor Manufacturing Company Limited
- Rainer Yen-Chieh Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Carrier barrier layer for tuning a threshold voltage of a ferroelec...
- Patent number 11,769,815
- Issue date Sep 26, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Rainer Yen-Chieh Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Capping layer over FET FeRAM to increase charge mobility
- Patent number 11,729,990
- Issue date Aug 15, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Rainer Yen-Chieh Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device and method for fabricating the same
- Patent number 11,706,928
- Issue date Jul 18, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Rainer Yen-Chieh Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Annealed seed layer to improve ferroelectric properties of memory l...
- Patent number 11,690,228
- Issue date Jun 27, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Song-Fu Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric memory device, manufacturing method of the ferroelect...
- Patent number 11,653,501
- Issue date May 16, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Rainer Yen-Chieh Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cocktail layer over gate dielectric layer of FET FeRAM
- Patent number 11,581,334
- Issue date Feb 14, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Rainer Yen-Chieh Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked ferroelectric structure
- Patent number 11,508,755
- Issue date Nov 22, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Rainer Yen-Chieh Huang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
COCKTAIL LAYER OVER GATE DIELECTRIC LAYER OF FET FERAM
- Publication number 20240389341
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Rainer Yen-Chieh Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CARRIER BARRIER LAYER FOR TUNING A THRESHOLD VOLTAGE OF A FERROELEC...
- Publication number 20240387685
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Rainer, Yen-Chieh Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAPPING LAYER OVER FET FERAM TO INCREASE CHARGE MOBILITY
- Publication number 20240373641
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Rainer Yen-Chieh Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ANNEALED SEED LAYER TO IMPROVE FERROELECTRIC PROPERTIES OF MEMORY L...
- Publication number 20240164111
- Publication date May 16, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Song-Fu Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC MEMORY DEVICES HAVING IMPROVED FERROELECTRIC PROPERTI...
- Publication number 20230378354
- Publication date Nov 23, 2023
- Taiwan Semiconductor Manufacturing Company Limited
- Po-Ting LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COCKTAIL LAYER OVER GATE DIELECTRIC LAYER OF FET FERAM
- Publication number 20230380177
- Publication date Nov 23, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Rainer Yen-Chieh Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED FERROELECTRIC STRUCTURE
- Publication number 20230371272
- Publication date Nov 16, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Rainer Yen-Chieh Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING FERROELECTRIC MEMORY DEVICE
- Publication number 20230363173
- Publication date Nov 9, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Rainer Yen-Chieh Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAPPING LAYER OVER FET FERAM TO INCREASE CHARGE MOBILITY
- Publication number 20230329000
- Publication date Oct 12, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Rainer Yen-Chieh Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC MEMORY DEVICE, MANUFACTURING METHOD OF THE FERROELECT...
- Publication number 20230269947
- Publication date Aug 24, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Rainer, Yen-Chieh Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED FERROELECTRIC STRUCTURE
- Publication number 20230074585
- Publication date Mar 9, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Rainer Yen-Chieh Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ANNEALED SEED LAYER TO IMPROVE FERROELECTRIC PROPERTIES OF MEMORY L...
- Publication number 20220384460
- Publication date Dec 1, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Song-Fu Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CARRIER BARRIER LAYER FOR TUNING A THRESHOLD VOLTAGE OF A FERROELEC...
- Publication number 20220375947
- Publication date Nov 24, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Rainer, Yen-Chieh Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COCKTAIL LAYER OVER GATE DIELECTRIC LAYER OF FET FERAM
- Publication number 20220359544
- Publication date Nov 10, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Rainer Yen-Chieh Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC MEMORY DEVICES HAVING IMPROVED FERROELECTRIC PROPERTI...
- Publication number 20220352379
- Publication date Nov 3, 2022
- Taiwan Semiconductor Manufacturing Company Limited
- Po-Ting LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ORGANIC GATE TFT-TYPE STRESS SENSORS AND METHOD OF MAKING AND USING...
- Publication number 20220344570
- Publication date Oct 27, 2022
- Taiwan Semiconductor Manufacturing Company Limited
- Rainer, Yen-Chieh HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CARRIER BARRIER LAYER FOR TUNING A THRESHOLD VOLTAGE OF A FERROELEC...
- Publication number 20220285519
- Publication date Sep 8, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Rainer Yen-Chieh Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC MEMORY DEVICE, MANUFACTURING METHOD OF THE FERROELECT...
- Publication number 20220285396
- Publication date Sep 8, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Rainer, Yen-Chieh Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED FERROELECTRIC STRUCTURE
- Publication number 20220271046
- Publication date Aug 25, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Rainer Yen-Chieh Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ANNEALED SEED LAYER TO IMPROVE FERROELECTRIC PROPERTIES OF MEMORY L...
- Publication number 20220271047
- Publication date Aug 25, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Song-Fu Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COCKTAIL LAYER OVER GATE DIELECTRIC LAYER OF FET FERAM
- Publication number 20220254793
- Publication date Aug 11, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Rainer Yen-Chieh Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAPPING LAYER OVER FET FERAM TO INCREASE CHARGE MOBILITY
- Publication number 20220254794
- Publication date Aug 11, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Rainer Yen-Chieh Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20220139935
- Publication date May 5, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Rainer Yen-Chieh Huang
- H01 - BASIC ELECTRIC ELEMENTS

Rainer Yen-Chieh Huang

Person

Patents Grantslast 30 patents

Method of forming ferroelectric memory device

Ferroelectric memory device, manufacturing method of the ferroelect...

Stacked ferroelectric structure

Stacked ferroelectric structure

Carrier barrier layer for tuning a threshold voltage of a ferroelec...

Cocktail layer over gate dielectric layer of FET FeRAM

Capping layer over FET FeRAM to increase charge mobility

Annealed seed layer to improve ferroelectric properties of memory l...

Cocktail layer over gate dielectric layer of FET FeRAM

Organic gate TFT-type stress sensors and method of making and using...

Carrier barrier layer for tuning a threshold voltage of a ferroelec...

Capping layer over FET FeRAM to increase charge mobility

Memory device and method for fabricating the same

Annealed seed layer to improve ferroelectric properties of memory l...

Ferroelectric memory device, manufacturing method of the ferroelect...

Cocktail layer over gate dielectric layer of FET FeRAM

Stacked ferroelectric structure

Patents Applicationslast 30 patents

COCKTAIL LAYER OVER GATE DIELECTRIC LAYER OF FET FERAM

CARRIER BARRIER LAYER FOR TUNING A THRESHOLD VOLTAGE OF A FERROELEC...

CAPPING LAYER OVER FET FERAM TO INCREASE CHARGE MOBILITY

ANNEALED SEED LAYER TO IMPROVE FERROELECTRIC PROPERTIES OF MEMORY L...

FERROELECTRIC MEMORY DEVICES HAVING IMPROVED FERROELECTRIC PROPERTI...

COCKTAIL LAYER OVER GATE DIELECTRIC LAYER OF FET FERAM

STACKED FERROELECTRIC STRUCTURE

METHOD OF FORMING FERROELECTRIC MEMORY DEVICE

CAPPING LAYER OVER FET FERAM TO INCREASE CHARGE MOBILITY

FERROELECTRIC MEMORY DEVICE, MANUFACTURING METHOD OF THE FERROELECT...

STACKED FERROELECTRIC STRUCTURE

ANNEALED SEED LAYER TO IMPROVE FERROELECTRIC PROPERTIES OF MEMORY L...

CARRIER BARRIER LAYER FOR TUNING A THRESHOLD VOLTAGE OF A FERROELEC...

COCKTAIL LAYER OVER GATE DIELECTRIC LAYER OF FET FERAM

FERROELECTRIC MEMORY DEVICES HAVING IMPROVED FERROELECTRIC PROPERTI...

ORGANIC GATE TFT-TYPE STRESS SENSORS AND METHOD OF MAKING AND USING...

CARRIER BARRIER LAYER FOR TUNING A THRESHOLD VOLTAGE OF A FERROELEC...

FERROELECTRIC MEMORY DEVICE, MANUFACTURING METHOD OF THE FERROELECT...

STACKED FERROELECTRIC STRUCTURE

ANNEALED SEED LAYER TO IMPROVE FERROELECTRIC PROPERTIES OF MEMORY L...

COCKTAIL LAYER OVER GATE DIELECTRIC LAYER OF FET FERAM

CAPPING LAYER OVER FET FERAM TO INCREASE CHARGE MOBILITY

MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME