Rajaram Shetty

Person

Niskayuna, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Low etch pit density 6 inch semi-insulating gallium arsenide wafers
- Patent number 12,084,790
- Issue date Sep 10, 2024
- AXT, Inc.
- Rajaram Shetty
- C30 - CRYSTAL GROWTH
Information Patent Grant
Low etch pit density 6 inch semi-insulating gallium arsenide wafers
- Patent number 11,680,340
- Issue date Jun 20, 2023
- AXT, Inc.
- Rajaram Shetty
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monocrystalline germanium wafers, method for preparing the same, me...
- Patent number 11,127,867
- Issue date Sep 21, 2021
- Beijing Tongmei Xtal Technology Co., Ltd.
- Rajaram Shetty
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
LOW ETCH PIT DENSITY 6 INCH SEMI-INSULATING GALLIUM ARSENIDE WAFERS
- Publication number 20240426025
- Publication date Dec 26, 2024
- AXT, Inc.
- Rajaram Shetty
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD AND SYSTEM FOR VERTICAL GRADIENT FREEZE 8 INCH GALLIUM ARSEN...
- Publication number 20230416941
- Publication date Dec 28, 2023
- AXT, Inc.
- Weiguo Liu
- C30 - CRYSTAL GROWTH
Information Patent Application
LOW ETCH PIT DENSITY 6 INCH SEMI-INSULATING GALLIUM ARSENIDE WAFERS
- Publication number 20230407522
- Publication date Dec 21, 2023
- AXT, Inc.
- Rajaram Shetty
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD AND SYSTEM FOR VERTICAL GRADIENT FREEZE 8 INCH GALLIUM ARSEN...
- Publication number 20220298673
- Publication date Sep 22, 2022
- AXT, Inc.
- Weiguo Liu
- C30 - CRYSTAL GROWTH
Information Patent Application
GERMANIUM SINGLE-CRYSTAL WAFER, METHOD FOR PREPARING GERMANIUM SING...
- Publication number 20220238746
- Publication date Jul 28, 2022
- BEIJING TONGMEI XTAL TECHNOLOGY CO., LTD.
- Rajaram SHETTY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Monocrystalline Germanium Wafers, Method for Preparing the Same, Me...
- Publication number 20210175377
- Publication date Jun 10, 2021
- BEIJING TONGMEI XTAL TECHNOLOGY CO., LTD.
- Rajaram SHETTY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low Etch Pit Density Gallium Arsenide Crystals With Boron Dopant
- Publication number 20200190697
- Publication date Jun 18, 2020
- AXT, Inc.
- Rajaram Shetty
- C30 - CRYSTAL GROWTH
Information Patent Application
LOW ETCH PIT DENSITY 6 INCH SEMI-INSULATING GALLIUM ARSENIDE WAFERS
- Publication number 20200190696
- Publication date Jun 18, 2020
- AXT, Inc.
- Rajaram Shetty
- C30 - CRYSTAL GROWTH

Rajaram Shetty

Person

Patents Grantslast 30 patents

Low etch pit density 6 inch semi-insulating gallium arsenide wafers

Low etch pit density 6 inch semi-insulating gallium arsenide wafers

Monocrystalline germanium wafers, method for preparing the same, me...

Patents Applicationslast 30 patents

LOW ETCH PIT DENSITY 6 INCH SEMI-INSULATING GALLIUM ARSENIDE WAFERS

METHOD AND SYSTEM FOR VERTICAL GRADIENT FREEZE 8 INCH GALLIUM ARSEN...

LOW ETCH PIT DENSITY 6 INCH SEMI-INSULATING GALLIUM ARSENIDE WAFERS

METHOD AND SYSTEM FOR VERTICAL GRADIENT FREEZE 8 INCH GALLIUM ARSEN...

GERMANIUM SINGLE-CRYSTAL WAFER, METHOD FOR PREPARING GERMANIUM SING...

Monocrystalline Germanium Wafers, Method for Preparing the Same, Me...

Low Etch Pit Density Gallium Arsenide Crystals With Boron Dopant

LOW ETCH PIT DENSITY 6 INCH SEMI-INSULATING GALLIUM ARSENIDE WAFERS