RAJARAO JAMMY

Person

WAPPINGERS FALLS, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method and apparatus for electroplating on SOI and bulk semiconduct...
- Patent number 8,926,805
- Issue date Jan 6, 2015
- International Business Machines Corporation
- Veeraraghavan S. Basker
- C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR
Information Patent Grant
CMOS structure and method for fabrication thereof using multiple cr...
- Patent number 8,785,281
- Issue date Jul 22, 2014
- International Business Machines Corporation
- Tze-Chiang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for electroplating on soi and bulk semiconduct...
- Patent number 8,551,313
- Issue date Oct 8, 2013
- International Business Machines Corporation
- Veeraraghavan S. Basker
- C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR
Information Patent Grant
Selective implementation of barrier layers to achieve threshold vol...
- Patent number 8,193,051
- Issue date Jun 5, 2012
- International Business Machines Corporation
- Nestor A. Bojarczuk, Jr.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS structure and method for fabrication thereof using multiple cr...
- Patent number 8,158,481
- Issue date Apr 17, 2012
- International Business Machines Corporation
- Tze-Chiang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming metal/high-κ gate stacks with high mobility
- Patent number 8,153,514
- Issue date Apr 10, 2012
- International Business Machines Corporation
- Wanda Andreoni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Opto-thermal annealing methods for forming metal gate and fully sil...
- Patent number 8,039,331
- Issue date Oct 18, 2011
- International Business Machines Corporation
- Scott D. Allen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Using metal/metal nitride bilayers as gate electrodes in self-align...
- Patent number 7,999,323
- Issue date Aug 16, 2011
- International Business Machines Corporation
- Eduard A. Cartier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal gate electrode stabilization by alloying
- Patent number 7,944,006
- Issue date May 17, 2011
- International Business Machines Corporation
- Veeraraghavan S. Basker
- C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR
Information Patent Grant
Selective implementation of barrier layers to achieve threshold vol...
- Patent number 7,928,514
- Issue date Apr 19, 2011
- International Business Machines Corporation
- Nestor A. Bojarczuk, Jr.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate stack engineering by electrochemical processing utilizing thro...
- Patent number 7,868,410
- Issue date Jan 11, 2011
- International Business Machines Corporation
- Philippe M. Vereecken
- C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR
Information Patent Grant
Low threshold voltage semiconductor device with dual threshold volt...
- Patent number 7,858,500
- Issue date Dec 28, 2010
- International Business Machines Corporation
- Eduard A. Cartier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of fully silicided metal gate using dual self-aligned sil...
- Patent number 7,785,999
- Issue date Aug 31, 2010
- International Business Machines Corporation
- Cyril Cabral, Jr.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Introduction of metal impurity to change workfunction of conductive...
- Patent number 7,750,418
- Issue date Jul 6, 2010
- International Business Machines Corporation
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective implementation of barrier layers to achieve threshold vol...
- Patent number 7,745,278
- Issue date Jun 29, 2010
- International Business Machines Corporation
- Nestor A. Bojarczuk, Jr.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS structure and method for fabrication thereof using multiple cr...
- Patent number 7,671,421
- Issue date Mar 2, 2010
- International Business Machines Corporation
- Tze-Chiang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal carbide gate structure and method of fabrication
- Patent number 7,667,278
- Issue date Feb 23, 2010
- International Business Machines Corporation
- Cyril Cabral, Jr.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low threshold voltage semiconductor device with dual threshold volt...
- Patent number 7,655,994
- Issue date Feb 2, 2010
- International Business Machines Corporation
- Eduard A. Cartier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Using metal/metal nitride bilayers as gate electrodes in self-align...
- Patent number 7,598,545
- Issue date Oct 6, 2009
- International Business Machines Corporation
- Eduard A. Cartier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming HfSiN metal for n-FET applications
- Patent number 7,521,346
- Issue date Apr 21, 2009
- International Business Machines Corporation
- Alessandro C. Callegari
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor including damascene gate with an internal s...
- Patent number 7,479,684
- Issue date Jan 20, 2009
- International Business Machines Corporation
- Supratik Guha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective implementation of barrier layers to achieve threshold vol...
- Patent number 7,479,683
- Issue date Jan 20, 2009
- International Business Machines Corporation
- Nestor A. Bojarczuk, Jr.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective implementation of barrier layers to achieve threshold vol...
- Patent number 7,452,767
- Issue date Nov 18, 2008
- International Business Machines Corporation
- Nestor A. Bojarczuk, Jr.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stabilization of flatband voltages and threshold voltages in hafniu...
- Patent number 7,446,380
- Issue date Nov 4, 2008
- International Business Machines Corporation
- Nestor A. Bojarczuk, Jr.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Introduction of metal impurity to change workfunction of conductive...
- Patent number 7,425,497
- Issue date Sep 16, 2008
- International Business Machines Corporation
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Opto-thermal annealing methods for forming metal gate and fully sil...
- Patent number 7,410,852
- Issue date Aug 12, 2008
- International Business Machines Corporation
- Scott D. Allen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate stack engineering by electrochemical processing utilizing thro...
- Patent number 7,368,045
- Issue date May 6, 2008
- International Business Machines Corporation
- Philippe M. Vereecken
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of fully silicided metal gate using dual self-aligned sil...
- Patent number 7,271,455
- Issue date Sep 18, 2007
- International Business Machines Corporation
- Cyril Cabral, Jr.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitrogen-containing field effect transistor gate stack containing a...
- Patent number 7,242,055
- Issue date Jul 10, 2007
- International Business Machines Corporation
- Nestor A. Bojarczuk, Jr.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming metal/high-k gate stacks with high mobility
- Patent number 7,115,959
- Issue date Oct 3, 2006
- International Business Machines Corporation
- Wanda Andreoni
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD AND APPARATUS FOR ELECTROPLATING ON SOI AND BULK SEMICONDUCT...
- Publication number 20120318666
- Publication date Dec 20, 2012
- International Business Machines Corporation
- Veeraraghavan S. Basker
- C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR
Information Patent Application
CMOS STRUCTURE AND METHOD FOR FABRICATION THEREOF USING MULTIPLE CR...
- Publication number 20120142181
- Publication date Jun 7, 2012
- International Business Machines Corporation
- Tze-Chiang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE IMPLEMENTATION OF BARRIER LAYERS TO ACHIEVE THRESHOLD VOL...
- Publication number 20110165767
- Publication date Jul 7, 2011
- International Business Machines Corporation
- Nestor A. Bojarczuk, JR.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CMOS STRUCTURE AND METHOD FOR FABRICATION THEREOF USING MULTIPLE CR...
- Publication number 20100112800
- Publication date May 6, 2010
- International Business Machines Corporation
- Tze-Chiang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Using Metal/Metal Nitride Bilayers as Gate Electrodes in Self-Align...
- Publication number 20090302399
- Publication date Dec 10, 2009
- International Business Machines Corporation
- Eduard A. Cartier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL GATE ELECTRODE STABILIZATION BY ALLOYING
- Publication number 20090179279
- Publication date Jul 16, 2009
- International Business Machines Corporation
- Veeraraghavan S. Basker
- C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR
Information Patent Application
SELECTIVE IMPLEMENTATION OF BARRIER LAYERS TO ACHIEVE THRESHOLD VOL...
- Publication number 20090152642
- Publication date Jun 18, 2009
- International Business Machines Corporation
- Nestor A. Bojarczuk, JR.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND APPARATUS FOR ELECTROPLATING ON SOI AND BULK SEMICONDUCT...
- Publication number 20090127121
- Publication date May 21, 2009
- International Business Machines Corporation
- Veeraraghavan S. Basker
- C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR
Information Patent Application
DAMASCENE GATE FIELD EFFECT TRANSISTOR WITH AN INTERNAL SPACER STRU...
- Publication number 20090124057
- Publication date May 14, 2009
- International Business Machines Corporation
- Supratik Guha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING METAL/HIGH-k GATE STACKS WITH HIGH MOBILITY
- Publication number 20080293259
- Publication date Nov 27, 2008
- International Business Machines Corporation
- Wanda Andreoni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STABILIZATION OF FLATBAND VOLTAGES AND THRESHOLD VOLTAGES IN HAFNIU...
- Publication number 20080258198
- Publication date Oct 23, 2008
- International Business Machines Corporation
- Nestor A. Bojarczuk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING HfSiN METAL FOR n-FET APPLICATIONS
- Publication number 20080245658
- Publication date Oct 9, 2008
- International Business Machines Corporation
- Alessandro C. Callegari
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTRODUCTION OF METAL IMPURITY TO CHANGE WORKFUNCTION OF CONDUCTIVE...
- Publication number 20080217747
- Publication date Sep 11, 2008
- International Business Machines Corporation
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OPTO-THERMAL ANNEALING METHODS FOR FORMING METAL GATE AND FULLY SIL...
- Publication number 20080220581
- Publication date Sep 11, 2008
- International Business Machines Corporation
- Scott D. Allen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW THRESHOLD VOLTAGE SEMICONDUCTOR DEVICE WITH DUAL THRESHOLD VOLT...
- Publication number 20080182389
- Publication date Jul 31, 2008
- International Business Machines Corporation
- Eduard A. Cartier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE STACK ENGINEERING BY ELECTROCHEMICAL PROCESSING UTILIZING THRO...
- Publication number 20080142894
- Publication date Jun 19, 2008
- International Business Machines Corporation
- Philippe M. Vereecken
- C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR
Information Patent Application
METHOD OF FORMING HfSiN METAL FOR n-FET APPLICATIONS
- Publication number 20080038905
- Publication date Feb 14, 2008
- International Business Machines Corporation
- Alessandro C. Callegari
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMATION OF FULLY SILICIDED METAL GATE USING DUAL SELF-ALIGNED SIL...
- Publication number 20080026551
- Publication date Jan 31, 2008
- International Business Machines Corporation
- Cyril Cabral
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device structures (gate stacks) with charge compositions
- Publication number 20080017936
- Publication date Jan 24, 2008
- International Business Machines Corporation
- Douglas A. Buchanan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CMOS structure and method for fabrication thereof using multiple cr...
- Publication number 20070278586
- Publication date Dec 6, 2007
- International Business Machines Corporation
- Tze-Chiang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Opto-thermal annealing methods for forming metal gate and fully sil...
- Publication number 20070249131
- Publication date Oct 25, 2007
- International Business Machines Corporation
- Scott D. Allen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Introduction of metal impurity to change workfunction of conductive...
- Publication number 20070173008
- Publication date Jul 26, 2007
- International Business Machines Corporation
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low threshold voltage semiconductor device with dual threshold volt...
- Publication number 20070090471
- Publication date Apr 26, 2007
- International Business Machines Corporation
- Eduard A. Cartier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming metal/high-k gate stacks with high mobility
- Publication number 20060289903
- Publication date Dec 28, 2006
- Wanda Andreoni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method to control flatband/threshold voltage in high-k metal gated...
- Publication number 20060289948
- Publication date Dec 28, 2006
- International Business Machines Corporation
- Stephen L. Brown
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Selective implementation of barrier layers to achieve threshold vol...
- Publication number 20060275977
- Publication date Dec 7, 2006
- International Business Machines Corporation
- Nestor A. Bojarczuk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Stabilization of flatband voltages and threshold voltages in hafniu...
- Publication number 20060244035
- Publication date Nov 2, 2006
- International Business Machines Corporation
- Nestor A. Bojarczuk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Using metal/metal nitride bilayers as gate electrodes in self-align...
- Publication number 20060237796
- Publication date Oct 26, 2006
- International Business Machines Corporation
- Eduard A. Cartier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field Effect Transistor With Etched-Back Gate Dielectric
- Publication number 20060189083
- Publication date Aug 24, 2006
- International Business Machines Corporation
- Katherine L. Saenger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Metal carbide gate structure and method of fabrication
- Publication number 20060186490
- Publication date Aug 24, 2006
- International Business Machines Corporation
- Cyril Cabral
- H01 - BASIC ELECTRIC ELEMENTS

RAJARAO JAMMY

Person

Patents Grantslast 30 patents

Method and apparatus for electroplating on SOI and bulk semiconduct...

CMOS structure and method for fabrication thereof using multiple cr...

Method and apparatus for electroplating on soi and bulk semiconduct...

Selective implementation of barrier layers to achieve threshold vol...

CMOS structure and method for fabrication thereof using multiple cr...

Method of forming metal/high-κ gate stacks with high mobility

Opto-thermal annealing methods for forming metal gate and fully sil...

Using metal/metal nitride bilayers as gate electrodes in self-align...

Metal gate electrode stabilization by alloying

Selective implementation of barrier layers to achieve threshold vol...

Gate stack engineering by electrochemical processing utilizing thro...

Low threshold voltage semiconductor device with dual threshold volt...

Formation of fully silicided metal gate using dual self-aligned sil...

Introduction of metal impurity to change workfunction of conductive...

Selective implementation of barrier layers to achieve threshold vol...

CMOS structure and method for fabrication thereof using multiple cr...

Metal carbide gate structure and method of fabrication

Low threshold voltage semiconductor device with dual threshold volt...

Using metal/metal nitride bilayers as gate electrodes in self-align...

Method of forming HfSiN metal for n-FET applications

Field effect transistor including damascene gate with an internal s...

Selective implementation of barrier layers to achieve threshold vol...

Selective implementation of barrier layers to achieve threshold vol...

Stabilization of flatband voltages and threshold voltages in hafniu...

Introduction of metal impurity to change workfunction of conductive...

Opto-thermal annealing methods for forming metal gate and fully sil...

Gate stack engineering by electrochemical processing utilizing thro...

Formation of fully silicided metal gate using dual self-aligned sil...

Nitrogen-containing field effect transistor gate stack containing a...

Method of forming metal/high-k gate stacks with high mobility

Patents Applicationslast 30 patents

METHOD AND APPARATUS FOR ELECTROPLATING ON SOI AND BULK SEMICONDUCT...

CMOS STRUCTURE AND METHOD FOR FABRICATION THEREOF USING MULTIPLE CR...

SELECTIVE IMPLEMENTATION OF BARRIER LAYERS TO ACHIEVE THRESHOLD VOL...

CMOS STRUCTURE AND METHOD FOR FABRICATION THEREOF USING MULTIPLE CR...

Using Metal/Metal Nitride Bilayers as Gate Electrodes in Self-Align...

METAL GATE ELECTRODE STABILIZATION BY ALLOYING

SELECTIVE IMPLEMENTATION OF BARRIER LAYERS TO ACHIEVE THRESHOLD VOL...

METHOD AND APPARATUS FOR ELECTROPLATING ON SOI AND BULK SEMICONDUCT...

DAMASCENE GATE FIELD EFFECT TRANSISTOR WITH AN INTERNAL SPACER STRU...

METHOD OF FORMING METAL/HIGH-k GATE STACKS WITH HIGH MOBILITY

STABILIZATION OF FLATBAND VOLTAGES AND THRESHOLD VOLTAGES IN HAFNIU...

METHOD OF FORMING HfSiN METAL FOR n-FET APPLICATIONS

INTRODUCTION OF METAL IMPURITY TO CHANGE WORKFUNCTION OF CONDUCTIVE...

OPTO-THERMAL ANNEALING METHODS FOR FORMING METAL GATE AND FULLY SIL...

LOW THRESHOLD VOLTAGE SEMICONDUCTOR DEVICE WITH DUAL THRESHOLD VOLT...

GATE STACK ENGINEERING BY ELECTROCHEMICAL PROCESSING UTILIZING THRO...

METHOD OF FORMING HfSiN METAL FOR n-FET APPLICATIONS

FORMATION OF FULLY SILICIDED METAL GATE USING DUAL SELF-ALIGNED SIL...

Semiconductor device structures (gate stacks) with charge compositions

CMOS structure and method for fabrication thereof using multiple cr...

Opto-thermal annealing methods for forming metal gate and fully sil...

Introduction of metal impurity to change workfunction of conductive...

Low threshold voltage semiconductor device with dual threshold volt...

Method of forming metal/high-k gate stacks with high mobility

Method to control flatband/threshold voltage in high-k metal gated...

Selective implementation of barrier layers to achieve threshold vol...

Stabilization of flatband voltages and threshold voltages in hafniu...

Using metal/metal nitride bilayers as gate electrodes in self-align...

Field Effect Transistor With Etched-Back Gate Dielectric

Metal carbide gate structure and method of fabrication