Rajasekhar Venigalla

Person

Hopewell Junction, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Gate cut with integrated etch stop layer
- Patent number 12,074,165
- Issue date Aug 27, 2024
- TESSERA LLC
- Marc A. Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Socket design for a memory device
- Patent number 11,961,556
- Issue date Apr 16, 2024
- Micron Technology, Inc.
- Amitava Majumdar
- G11 - INFORMATION STORAGE
Information Patent Grant
Low resistance crosspoint architecture
- Patent number 11,882,774
- Issue date Jan 23, 2024
- Micron Technology, Inc.
- Rajasekhar Venigalla
- G11 - INFORMATION STORAGE
Information Patent Grant
Gate cut with integrated etch stop layer
- Patent number 11,776,957
- Issue date Oct 3, 2023
- TESSERA LLC
- Marc A. Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory with optimized resistive layers
- Patent number 11,778,837
- Issue date Oct 3, 2023
- Micron Technology, Inc.
- Lei Wei
Information Patent Grant
Gate cut with integrated etch stop layer
- Patent number 11,552,077
- Issue date Jan 10, 2023
- TESSERA LLC
- Marc A. Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory with optimized resistive layers
- Patent number 11,380,732
- Issue date Jul 5, 2022
- Micron Technology, Inc.
- Lei Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanosheet field effect transistors with partial inside spacers
- Patent number 11,342,446
- Issue date May 24, 2022
- Tessera, Inc.
- Michael A. Guillorn
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Additive core subtractive liner for metal cut etch processes
- Patent number 11,276,767
- Issue date Mar 15, 2022
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Socket design for a memory device
- Patent number 11,222,695
- Issue date Jan 11, 2022
- Micron Technology, Inc.
- Amitava Majumdar
- G11 - INFORMATION STORAGE
Information Patent Grant
Additive core subtractive liner for metal cut etch processes
- Patent number 11,152,489
- Issue date Oct 19, 2021
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low resistance crosspoint architecture
- Patent number 11,121,317
- Issue date Sep 14, 2021
- Micron Technology, Inc.
- Rajasekhar Venigalla
- G11 - INFORMATION STORAGE
Information Patent Grant
Additive core subtractive liner for metal cut etch processes
- Patent number 11,075,281
- Issue date Jul 27, 2021
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Subtractive vFET process flow with replacement metal gate and metal...
- Patent number 11,056,391
- Issue date Jul 6, 2021
- International Business Machines Corporation
- Hari V. Mallela
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical fin field effect transistor with air gap spacers
- Patent number 11,024,709
- Issue date Jun 1, 2021
- International Business Machines Corporation
- Hari V. Mallela
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate cut with integrated etch stop layer
- Patent number 10,998,314
- Issue date May 4, 2021
- Tessera, Inc.
- Marc A. Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical FET devices with multiple channel lengths
- Patent number 10,957,603
- Issue date Mar 23, 2021
- International Business Machines Corporation
- Hari V. Mallela
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Orientation engineering in complementary metal oxide semiconductor...
- Patent number 10,840,247
- Issue date Nov 17, 2020
- International Business Machines Corporation
- Chia-Yu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabricating tapered semiconductor devices
- Patent number 10,832,971
- Issue date Nov 10, 2020
- International Business Machines Corporation
- Rajasekhar Venigalla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Orientation engineering in complementary metal oxide semiconductor...
- Patent number 10,777,557
- Issue date Sep 15, 2020
- International Business Machines Corporation
- Chia-Yu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Orientation engineering in complementary metal oxide semiconductor...
- Patent number 10,734,385
- Issue date Aug 4, 2020
- International Business Machines Corporation
- Chia-Yu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical transistor fabrication and devices
- Patent number 10,727,316
- Issue date Jul 28, 2020
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate cut with integrated etch stop layer
- Patent number 10,665,589
- Issue date May 26, 2020
- Tessera, Inc.
- Marc A. Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid substrate engineering in CMOS finFET integration for mobilit...
- Patent number 10,658,391
- Issue date May 19, 2020
- International Business Machines Corporation
- Chia-Yu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical fin field effect transistor with air gap spacers
- Patent number 10,644,104
- Issue date May 5, 2020
- International Business Machines Corporation
- Hari V. Mallela
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical transistor fabrication and devices
- Patent number 10,622,459
- Issue date Apr 14, 2020
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Additive core subtractive liner for metal cut etch processes
- Patent number 10,600,884
- Issue date Mar 24, 2020
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate cut with integrated etch stop layer
- Patent number 10,580,773
- Issue date Mar 3, 2020
- Tessera, Inc.
- Marc A. Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Preserving channel strain in fin cuts
- Patent number 10,573,646
- Issue date Feb 25, 2020
- International Business Machines Corporation
- Andrew M. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanosheet field effect transistors with partial inside spacers
- Patent number 10,559,670
- Issue date Feb 11, 2020
- International Business Machines Corporation
- Michael A. Guillorn
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SOCKET DESIGN FOR A MEMORY DEVICE
- Publication number 20240347107
- Publication date Oct 17, 2024
- Micron Technology, Inc.
- Amitava Majumdar
- G11 - INFORMATION STORAGE
Information Patent Application
TIER RECESS METHOD
- Publication number 20240332179
- Publication date Oct 3, 2024
- Micron Technology, Inc.
- Rajasekhar Venigalla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW RESISTANCE CROSSPOINT ARCHITECTURE
- Publication number 20240224825
- Publication date Jul 4, 2024
- Micron Technology, Inc.
- Rajasekhar Venigalla
- G11 - INFORMATION STORAGE
Information Patent Application
GATE CUT WITH INTEGRATED ETCH STOP LAYER
- Publication number 20240222373
- Publication date Jul 4, 2024
- TESSERA LLC
- Marc A. Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING MICROELECTRONIC DEVICES, AND RELATED MICROELECTR...
- Publication number 20230395150
- Publication date Dec 7, 2023
- Micron Technology, Inc.
- Rui Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory Arrays Comprising Strings Of Memory Cells And Methods Used I...
- Publication number 20230343393
- Publication date Oct 26, 2023
- Micron Technology, Inc.
- Jordan D. Greenlee
- G11 - INFORMATION STORAGE
Information Patent Application
GATE CUT WITH INTEGRATED ETCH STOP LAYER
- Publication number 20230282641
- Publication date Sep 7, 2023
- TESSERA LLC
- Marc A. Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory Arrays Comprising Strings Of Memory Cells And Methods Used I...
- Publication number 20230207469
- Publication date Jun 29, 2023
- Micron Technology, Inc.
- Damir Fazil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory Arrays Comprising Strings Of Memory Cells And Methods Used I...
- Publication number 20230170024
- Publication date Jun 1, 2023
- Micron Technology, Inc.
- Nancy M. Lomeli
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY WITH OPTIMIZED RESISTIVE LAYERS
- Publication number 20220406847
- Publication date Dec 22, 2022
- Micron Technology, Inc.
- Lei Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSHEET FIELD EFFECT TRANSISTORS WITH PARTIAL INSIDE SPACERS
- Publication number 20220320316
- Publication date Oct 6, 2022
- TESSERA LLC
- Michael A. Guillorn
- B82 - NANO-TECHNOLOGY
Information Patent Application
SOCKET DESIGN FOR A MEMORY DEVICE
- Publication number 20220208264
- Publication date Jun 30, 2022
- Micron Technology, Inc.
- Amitava Majumdar
- G11 - INFORMATION STORAGE
Information Patent Application
LOW RESISTANCE CROSSPOINT ARCHITECTURE
- Publication number 20220069216
- Publication date Mar 3, 2022
- Micron Technology, Inc.
- Rajasekhar Venigalla
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY WITH OPTIMIZED RESISTIVE LAYERS
- Publication number 20220037403
- Publication date Feb 3, 2022
- Micron Technology, Inc.
- Lei Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE CUT WITH INTEGRATED ETCH STOP LAYER
- Publication number 20210305247
- Publication date Sep 30, 2021
- Tessera, Inc.
- Marc A. Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW RESISTANCE CROSSPOINT ARCHITECTURE
- Publication number 20210151675
- Publication date May 20, 2021
- Micron Technology, Inc.
- Rajasekhar Venigalla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOCKET DESIGN FOR A MEMORY DEVICE
- Publication number 20210151105
- Publication date May 20, 2021
- Micron Technology, Inc.
- Amitava Majumdar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL FIN FIELD EFFECT TRANSISTOR WITH AIR GAP SPACERS
- Publication number 20200212174
- Publication date Jul 2, 2020
- International Business Machines Corporation
- Hari V. Mallela
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE CUT WITH INTEGRATED ETCH STOP LAYER
- Publication number 20200152628
- Publication date May 14, 2020
- Tessera, Inc.
- Marc A. Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSHEET FIELD EFFECT TRANSISTORS WITH PARTIAL INSIDE SPACERS
- Publication number 20200098893
- Publication date Mar 26, 2020
- International Business Machines Corporation
- Michael A. Guillorn
- B82 - NANO-TECHNOLOGY
Information Patent Application
ADDITIVE CORE SUBTRACTIVE LINER FOR METAL CUT ETCH PROCESSES
- Publication number 20200083350
- Publication date Mar 12, 2020
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ADDITIVE CORE SUBTRACTIVE LINER FOR METAL CUT ETCH PROCESSES
- Publication number 20200083349
- Publication date Mar 12, 2020
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ORIENTATION ENGINEERING IN COMPLEMENTARY METAL OXIDE SEMICONDUCTOR...
- Publication number 20200075598
- Publication date Mar 5, 2020
- International Business Machines Corporation
- Chia-Yu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATING TAPERED SEMICONDUCTOR DEVICES
- Publication number 20200075428
- Publication date Mar 5, 2020
- International Business Machines Corporation
- Rajasekhar VENIGALLA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ORIENTATION ENGINEERING IN COMPLEMENTARY METAL OXIDE SEMICONDUCTOR...
- Publication number 20190378840
- Publication date Dec 12, 2019
- International Business Machines Corporation
- Chia-Yu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ORIENTATION ENGINEERING IN COMPLEMENTARY METAL OXIDE SEMICONDUCTOR...
- Publication number 20190378839
- Publication date Dec 12, 2019
- International Business Machines Corporation
- Chia-Yu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL FET DEVICES WITH MULTIPLE CHANNEL LENGTHS
- Publication number 20190295897
- Publication date Sep 26, 2019
- International Business Machines Corporation
- Hari V. Mallela
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL FIN FIELD EFFECT TRANSISTOR WITH AIR GAP SPACERS
- Publication number 20190027557
- Publication date Jan 24, 2019
- International Business Machines Corporation
- Hari V. Mallela
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE CUT WITH INTEGRATED ETCH STOP LAYER
- Publication number 20180350810
- Publication date Dec 6, 2018
- International Business Machines Corporation
- Marc A. Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Three-Dimensional Stacked Junctionless Channels For Dense SRAM
- Publication number 20180342525
- Publication date Nov 29, 2018
- International Business Machines Corporation
- Michael A. Guillorn
- H01 - BASIC ELECTRIC ELEMENTS

Rajasekhar Venigalla

Person

Patents Grantslast 30 patents

Gate cut with integrated etch stop layer

Socket design for a memory device

Low resistance crosspoint architecture

Gate cut with integrated etch stop layer

Memory with optimized resistive layers

Gate cut with integrated etch stop layer

Memory with optimized resistive layers

Nanosheet field effect transistors with partial inside spacers

Additive core subtractive liner for metal cut etch processes

Socket design for a memory device

Additive core subtractive liner for metal cut etch processes

Low resistance crosspoint architecture

Additive core subtractive liner for metal cut etch processes

Subtractive vFET process flow with replacement metal gate and metal...

Vertical fin field effect transistor with air gap spacers

Gate cut with integrated etch stop layer

Vertical FET devices with multiple channel lengths

Orientation engineering in complementary metal oxide semiconductor...

Fabricating tapered semiconductor devices

Orientation engineering in complementary metal oxide semiconductor...

Orientation engineering in complementary metal oxide semiconductor...

Vertical transistor fabrication and devices

Gate cut with integrated etch stop layer

Hybrid substrate engineering in CMOS finFET integration for mobilit...

Vertical fin field effect transistor with air gap spacers

Vertical transistor fabrication and devices

Additive core subtractive liner for metal cut etch processes

Gate cut with integrated etch stop layer

Preserving channel strain in fin cuts

Nanosheet field effect transistors with partial inside spacers

Patents Applicationslast 30 patents

SOCKET DESIGN FOR A MEMORY DEVICE

TIER RECESS METHOD

LOW RESISTANCE CROSSPOINT ARCHITECTURE

GATE CUT WITH INTEGRATED ETCH STOP LAYER

METHODS OF FORMING MICROELECTRONIC DEVICES, AND RELATED MICROELECTR...

Memory Arrays Comprising Strings Of Memory Cells And Methods Used I...

GATE CUT WITH INTEGRATED ETCH STOP LAYER

Memory Arrays Comprising Strings Of Memory Cells And Methods Used I...

Memory Arrays Comprising Strings Of Memory Cells And Methods Used I...

MEMORY WITH OPTIMIZED RESISTIVE LAYERS

NANOSHEET FIELD EFFECT TRANSISTORS WITH PARTIAL INSIDE SPACERS

SOCKET DESIGN FOR A MEMORY DEVICE

LOW RESISTANCE CROSSPOINT ARCHITECTURE

MEMORY WITH OPTIMIZED RESISTIVE LAYERS

GATE CUT WITH INTEGRATED ETCH STOP LAYER

LOW RESISTANCE CROSSPOINT ARCHITECTURE

SOCKET DESIGN FOR A MEMORY DEVICE

VERTICAL FIN FIELD EFFECT TRANSISTOR WITH AIR GAP SPACERS

GATE CUT WITH INTEGRATED ETCH STOP LAYER

NANOSHEET FIELD EFFECT TRANSISTORS WITH PARTIAL INSIDE SPACERS

ADDITIVE CORE SUBTRACTIVE LINER FOR METAL CUT ETCH PROCESSES

ADDITIVE CORE SUBTRACTIVE LINER FOR METAL CUT ETCH PROCESSES

ORIENTATION ENGINEERING IN COMPLEMENTARY METAL OXIDE SEMICONDUCTOR...

FABRICATING TAPERED SEMICONDUCTOR DEVICES

ORIENTATION ENGINEERING IN COMPLEMENTARY METAL OXIDE SEMICONDUCTOR...

ORIENTATION ENGINEERING IN COMPLEMENTARY METAL OXIDE SEMICONDUCTOR...

VERTICAL FET DEVICES WITH MULTIPLE CHANNEL LENGTHS

VERTICAL FIN FIELD EFFECT TRANSISTOR WITH AIR GAP SPACERS

GATE CUT WITH INTEGRATED ETCH STOP LAYER

Three-Dimensional Stacked Junctionless Channels For Dense SRAM