Rajeev Krishna Vytla

Person

Los Angeles, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Bipolar semiconductor device with multi-trench enhancement regions
- Patent number 10,164,078
- Issue date Dec 25, 2018
- Infineon Technologies Americas Corp.
- Florin Udrea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a superjunction structure
- Patent number 10,115,812
- Issue date Oct 30, 2018
- Infineon Technologies Americas Corp.
- Florin Udrea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Edge termination structure having a termination charge region below...
- Patent number 9,899,477
- Issue date Feb 20, 2018
- Infineon Technologies Americas Corp.
- Russell Turner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar semiconductor device with sub-cathode enhancement regions
- Patent number 9,871,128
- Issue date Jan 16, 2018
- Infineon Technologies Americas Corp.
- Florin Udrea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar semiconductor device having a deep charge-balanced structure
- Patent number 9,831,330
- Issue date Nov 28, 2017
- Infineon Technologies Americas Corp.
- Florin Udrea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IGBT having a deep superjunction structure
- Patent number 9,799,725
- Issue date Oct 24, 2017
- Infineon Technologies Americas Corp.
- Florin Udrea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar semiconductor device having a charge-balanced inter-trench...
- Patent number 9,768,284
- Issue date Sep 19, 2017
- Infineon Technologies Americas Corp.
- Florin Udrea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IGBT having an inter-trench superjunction structure
- Patent number 9,685,506
- Issue date Jun 20, 2017
- Infineon Technologies Americas Corp.
- Florin Udrea
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Semiconductor Device Having a Superjunction Structure
- Publication number 20180012983
- Publication date Jan 11, 2018
- Infineon Technologies Americas Corp.
- Florin Udrea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Bipolar Semiconductor Device with Multi-Trench Enhancement Regions
- Publication number 20170271488
- Publication date Sep 21, 2017
- Infineon Technologies Americas Corp.
- Florin Udrea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Bipolar Semiconductor Device Having Localized Enhancement Regions
- Publication number 20170271445
- Publication date Sep 21, 2017
- Infineon Technologies Americas Corp.
- Florin Udrea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Bipolar Semiconductor Device with Sub-Cathode Enhancement Regions
- Publication number 20170271487
- Publication date Sep 21, 2017
- Infineon Technologies Americas Corp.
- Florin Udrea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Bipolar Semiconductor Device Having a Charge-Balanced Inter-Trench...
- Publication number 20160260824
- Publication date Sep 8, 2016
- Florin Udrea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IGBT Having an Inter-Trench Superjunction Structure
- Publication number 20160260799
- Publication date Sep 8, 2016
- Infineon Technologies Americas Corp.
- Florin Udrea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Bipolar Semiconductor Device Having a Deep Charge-Balanced Structure
- Publication number 20160260823
- Publication date Sep 8, 2016
- Infineon Technologies Americas Corp.
- Florin Udrea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IGBT Having a Deep Superjunction Structure
- Publication number 20160260825
- Publication date Sep 8, 2016
- Infineon Technologies Americas Corp.
- Florin Udrea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Edge Termination Using Guard Rings Between Recessed Field Oxide Reg...
- Publication number 20160020279
- Publication date Jan 21, 2016
- INTERNATIONAL RECTIFIER CORPORATION
- Russell Turner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Edge Termination Structure Having a Termination Charge Region Below...
- Publication number 20160020308
- Publication date Jan 21, 2016
- International Rectifier Corporation
- Russell Turner
- H01 - BASIC ELECTRIC ELEMENTS

Rajeev Krishna Vytla

Person

Patents Grantslast 30 patents

Bipolar semiconductor device with multi-trench enhancement regions

Semiconductor device having a superjunction structure

Edge termination structure having a termination charge region below...

Bipolar semiconductor device with sub-cathode enhancement regions

Bipolar semiconductor device having a deep charge-balanced structure

IGBT having a deep superjunction structure

Bipolar semiconductor device having a charge-balanced inter-trench...

IGBT having an inter-trench superjunction structure

Patents Applicationslast 30 patents

Semiconductor Device Having a Superjunction Structure

Bipolar Semiconductor Device with Multi-Trench Enhancement Regions

Bipolar Semiconductor Device Having Localized Enhancement Regions

Bipolar Semiconductor Device with Sub-Cathode Enhancement Regions

Bipolar Semiconductor Device Having a Charge-Balanced Inter-Trench...

IGBT Having an Inter-Trench Superjunction Structure

Bipolar Semiconductor Device Having a Deep Charge-Balanced Structure

IGBT Having a Deep Superjunction Structure

Edge Termination Using Guard Rings Between Recessed Field Oxide Reg...

Edge Termination Structure Having a Termination Charge Region Below...