Rajesh Rengarajan

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Dresden, DE

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Patents Grantslast 30 patents

Information Patent Grant
PMOSFET device with localized nitrogen sidewall implantation
- Patent number 6,724,053
- Issue date Apr 20, 2004
- International Business Machines Corporation
- Rama Divakaruni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with STI sidewall implant
- Patent number 6,521,493
- Issue date Feb 18, 2003
- International Business Machines Corporation
- Johann Alsmeier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ultra-shallow junction dopant layer having a peak concentration wit...
- Patent number 6,329,704
- Issue date Dec 11, 2001
- International Business Machines Corporation
- Hiroyuki Akatsu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Process of forming an ultra-shallow junction dopant layer having a...
- Publication number 20010030333
- Publication date Oct 18, 2001
- Hiroyuki Akatsu
- H01 - BASIC ELECTRIC ELEMENTS