Rajinder Randy Sandhu

Person

Castaic, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Selective deposition of diamond in thermal vias
- Patent number 9,196,703
- Issue date Nov 24, 2015
- Northrop Grumman Systems Corporation
- Karl D. Hobart
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Leakage barrier for GaN based HEMT active device
- Patent number 8,809,137
- Issue date Aug 19, 2014
- Northrop Grumman Systems Corporation
- Rajinder Randy Sandhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Leakage barrier for GaN based HEMT active device
- Patent number 8,809,907
- Issue date Aug 19, 2014
- Northrop Grumman Systems Corporation
- Rajinder Randy Sandhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Direct growth of diamond in backside vias for GaN HEMT devices
- Patent number 8,575,657
- Issue date Nov 5, 2013
- Northrop Grumman Systems Corporation
- Vincent Gambin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Leakage barrier for GaN based HEMT active device
- Patent number 8,026,132
- Issue date Sep 27, 2011
- Northrop Grumman Systems Corporation
- Rajinder Randy Sandhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hard substrate wafer sawing process
- Patent number 7,041,579
- Issue date May 9, 2006
- Northrop Grumman Corporation
- Michael Edward Barsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Precision wide band gap semiconductor etching
- Patent number 6,245,687
- Issue date Jun 12, 2001
- TRW Inc.
- Michael E. Barsky
- C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR

Patents Applicationslast 30 patents

Information Patent Application
DIRECT GROWTH OF DIAMOND IN BACKSIDE VIAS FOR GAN HEMT DEVICES
- Publication number 20130248879
- Publication date Sep 26, 2013
- Northrop Grumman Systems Corporation
- Vincent Gambin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LEAKAGE BARRIER FOR GaN BASED HEMT ACTIVE DEVICE
- Publication number 20120032185
- Publication date Feb 9, 2012
- Northrop Grumman Corporation
- Rajinder Randy Sandhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND APPARATUS FOR FORMING A SEMI-INSULATING TRANSITION INTER...
- Publication number 20090045437
- Publication date Feb 19, 2009
- Northrop Grumman Space & Mission Systems Corp.
- Rajinder Sandhu
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
LEAKAGE BARRIER FOR GaN BASED HEMT ACTIVE DEVICE
- Publication number 20080153215
- Publication date Jun 26, 2008
- Rajinder Randy Sandhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor surface processing
- Publication number 20070215280
- Publication date Sep 20, 2007
- Rajinder R. Sandhu
- B24 - GRINDING POLISHING
Information Patent Application
Leakage barrier for GaN based HEMT active device
- Publication number 20070218611
- Publication date Sep 20, 2007
- Northrop Grumman Corporation
- Rajinder Randy Sandhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Hard substrate wafer sawing process
- Publication number 20050090076
- Publication date Apr 28, 2005
- Northrop Grumman Corporation
- Michael Edward Barsky
- H01 - BASIC ELECTRIC ELEMENTS

Rajinder Randy Sandhu

Person

Patents Grantslast 30 patents

Selective deposition of diamond in thermal vias

Leakage barrier for GaN based HEMT active device

Leakage barrier for GaN based HEMT active device

Direct growth of diamond in backside vias for GaN HEMT devices

Leakage barrier for GaN based HEMT active device

Hard substrate wafer sawing process

Precision wide band gap semiconductor etching

Patents Applicationslast 30 patents

DIRECT GROWTH OF DIAMOND IN BACKSIDE VIAS FOR GAN HEMT DEVICES

LEAKAGE BARRIER FOR GaN BASED HEMT ACTIVE DEVICE

METHOD AND APPARATUS FOR FORMING A SEMI-INSULATING TRANSITION INTER...

LEAKAGE BARRIER FOR GaN BASED HEMT ACTIVE DEVICE

Semiconductor surface processing

Leakage barrier for GaN based HEMT active device

Hard substrate wafer sawing process