Rak Jun Choi

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Tokushima, JP

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Patents Grantslast 30 patents

Information Patent Grant
Group III-nitride semiconductor thin film, method for fabricating t...
- Patent number 7,955,957
- Issue date Jun 7, 2011
- Samsung LED Co., Ltd.
- Rak Jun Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III-nitride semiconductor thin film, method for fabricating t...
- Patent number 7,687,814
- Issue date Mar 30, 2010
- Samsung Electro-Mechanics Co., Ltd.
- Rak Jun Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of growing non-polar a-plane gallium nitride
- Patent number 7,348,200
- Issue date Mar 25, 2008
- Samsung Electro-Mechanics Co. Ltd.
- Soo Min Lee
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
GROUP III-NITRIDE SEMICONDUCTOR THIN FILM, METHOD FOR FABRICATING T...
- Publication number 20100055883
- Publication date Mar 4, 2010
- Samsung Electro-Mechanics Co., Ltd.
- Rak Jun Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Group III-nitride semiconductor thin film, method for fabricating t...
- Publication number 20070045654
- Publication date Mar 1, 2007
- Samsung Electro-Mechanics CO., LTD.
- Rak Jun Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of growing non-polar a-plane gallium nitride
- Publication number 20060216914
- Publication date Sep 28, 2006
- Samsung Electro-Mechanics Co., Ltd.
- Soo Min Lee
- C30 - CRYSTAL GROWTH