Ralf Müller

Person

Zirndorf, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Silicon carbide substrate and method of growing SiC single crystal...
- Patent number 11,781,245
- Issue date Oct 10, 2023
- SICRYSTAL GMBH
- Michael Vogel
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon carbide substrate and method of growing SiC single crystal...
- Patent number 11,624,124
- Issue date Apr 11, 2023
- SICRYSTAL GMBH
- Michael Vogel
- C30 - CRYSTAL GROWTH
Information Patent Grant
Chamfered silicon carbide substrate and method of chamfering
- Patent number 11,515,140
- Issue date Nov 29, 2022
- SICRYSTAL GMBH
- Bernhard Ecker
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon carbide substrate and method of growing SiC single crystal...
- Patent number 11,236,438
- Issue date Feb 1, 2022
- SICRYSTAL GMBH
- Michael Vogel
- C30 - CRYSTAL GROWTH
Information Patent Grant
Chamfered silicon carbide substrate and method of chamfering
- Patent number 11,041,254
- Issue date Jun 22, 2021
- SICRYSTAL GMBH
- Michael Vogel
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
METHOD AND APPARATUS FOR THE THERMAL POST-TREATMENT OF AT LEAST ONE...
- Publication number 20240318352
- Publication date Sep 26, 2024
- SiCrystal GmbH
- Bernhard Ecker
- C30 - CRYSTAL GROWTH
Information Patent Application
Sublimation System And Method Of Growing At Least One Single Crystal
- Publication number 20240309546
- Publication date Sep 19, 2024
- SiCrystal GmbH
- Philipp SCHUH
- C30 - CRYSTAL GROWTH
Information Patent Application
Sublimation System and Method of Growing at Least One Single Crysta...
- Publication number 20240309545
- Publication date Sep 19, 2024
- SiCrystal GmbH
- Ralf MÜLLER
- C30 - CRYSTAL GROWTH
Information Patent Application
SYSTEM FOR MANUFACTURING A HIGH-QUALITY SEMICONDUCTOR SINGLE CRYSTA...
- Publication number 20240263346
- Publication date Aug 8, 2024
- SiCrystal GmbH
- Bernhard ECKER
- C30 - CRYSTAL GROWTH
Information Patent Application
SYSTEM FOR MANUFACTURING A HIGH-QUALITY SEMICONDUCTOR SINGLE CRYSTA...
- Publication number 20240263347
- Publication date Aug 8, 2024
- SiCrystal GmbH
- Bernhard ECKER
- C30 - CRYSTAL GROWTH
Information Patent Application
PRODUCTION METHOD FOR AN SIC VOLUME MONOCRYSTAL OF INHOMOGENEOUS SC...
- Publication number 20240003054
- Publication date Jan 4, 2024
- SiCrystal GmbH
- Bernhard ECKER
- C30 - CRYSTAL GROWTH
Information Patent Application
PRODUCTION METHOD FOR AN SIC VOLUME MONOCRYSTAL OF HOMOGENEOUS SCRE...
- Publication number 20230416939
- Publication date Dec 28, 2023
- SiCrystal GmbH
- Bernhard ECKER
- C01 - INORGANIC CHEMISTRY
Information Patent Application
SILICON CARBIDE SUBSTRATE AND METHOD OF GROWING SiC SINGLE CRYSTAL...
- Publication number 20230193508
- Publication date Jun 22, 2023
- SiCrystal GmbH
- Michael VOGEL
- C30 - CRYSTAL GROWTH
Information Patent Application
CHAMFERED SILICON CARBIDE SUBSTRATE AND METHOD OF CHAMFERING
- Publication number 20230078982
- Publication date Mar 16, 2023
- SiCrystal GmbH
- Bernhard Ecker
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE SUBSTRATE AND METHOD OF GROWING SiC SINGLE CRYSTAL...
- Publication number 20220090296
- Publication date Mar 24, 2022
- SiCrystal GmbH
- Michael VOGEL
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE SUBSTRATE AND METHOD OF GROWING SiC SINGLE CRYSTAL...
- Publication number 20210148006
- Publication date May 20, 2021
- SiCrystal GmbH
- Michael VOGEL
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE SUBSTRATE AND METHOD OF GROWING SiC SINGLE CRYSTAL...
- Publication number 20200071847
- Publication date Mar 5, 2020
- SiCrystal GmbH
- Michael VOGEL
- C30 - CRYSTAL GROWTH
Information Patent Application
CHAMFERED SILICON CARBIDE SUBSTRATE AND METHOD OF CHAMFERING
- Publication number 20190348272
- Publication date Nov 14, 2019
- SiCrystal GmbH
- Bernhard Ecker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHAMFERED SILICON CARBIDE SUBSTRATE AND METHOD OF CHAMFERING
- Publication number 20190345635
- Publication date Nov 14, 2019
- SiCrystal GmbH
- Michael Vogel
- B24 - GRINDING POLISHING

Ralf Müller

Person

Patents Grantslast 30 patents

Silicon carbide substrate and method of growing SiC single crystal...

Silicon carbide substrate and method of growing SiC single crystal...

Chamfered silicon carbide substrate and method of chamfering

Silicon carbide substrate and method of growing SiC single crystal...

Chamfered silicon carbide substrate and method of chamfering

Patents Applicationslast 30 patents

METHOD AND APPARATUS FOR THE THERMAL POST-TREATMENT OF AT LEAST ONE...

Sublimation System And Method Of Growing At Least One Single Crystal

Sublimation System and Method of Growing at Least One Single Crysta...

SYSTEM FOR MANUFACTURING A HIGH-QUALITY SEMICONDUCTOR SINGLE CRYSTA...

SYSTEM FOR MANUFACTURING A HIGH-QUALITY SEMICONDUCTOR SINGLE CRYSTA...

PRODUCTION METHOD FOR AN SIC VOLUME MONOCRYSTAL OF INHOMOGENEOUS SC...

PRODUCTION METHOD FOR AN SIC VOLUME MONOCRYSTAL OF HOMOGENEOUS SCRE...

SILICON CARBIDE SUBSTRATE AND METHOD OF GROWING SiC SINGLE CRYSTAL...

CHAMFERED SILICON CARBIDE SUBSTRATE AND METHOD OF CHAMFERING

SILICON CARBIDE SUBSTRATE AND METHOD OF GROWING SiC SINGLE CRYSTAL...

SILICON CARBIDE SUBSTRATE AND METHOD OF GROWING SiC SINGLE CRYSTAL...

SILICON CARBIDE SUBSTRATE AND METHOD OF GROWING SiC SINGLE CRYSTAL...

CHAMFERED SILICON CARBIDE SUBSTRATE AND METHOD OF CHAMFERING

CHAMFERED SILICON CARBIDE SUBSTRATE AND METHOD OF CHAMFERING