Ralf Siemieniec

Person

Villach, AT

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device including trench gate structure and buried shi...
- Patent number 12,295,156
- Issue date May 6, 2025
- Infineon Technologies AG
- Ralf Siemieniec
Information Patent Grant
Silicon carbide device with transistor cell and clamp regions in a...
- Patent number 12,057,473
- Issue date Aug 6, 2024
- Infineon Technologies AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including trench gate structure and buried shi...
- Patent number 11,961,904
- Issue date Apr 16, 2024
- Infineon Technologies AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device with silicon carbide body
- Patent number 11,881,512
- Issue date Jan 23, 2024
- Infineon Technologies AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide device with transistor cell and clamp region
- Patent number 11,876,133
- Issue date Jan 16, 2024
- Infineon Technologies AG
- Joachim Weyers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide device and method for forming a silicon carbide device
- Patent number 11,869,840
- Issue date Jan 9, 2024
- Infineon Technologies AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a silicon carbide semiconductor component
- Patent number 11,855,147
- Issue date Dec 26, 2023
- Infineon Technologies AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET having a drift region with a graded doping profile and metho...
- Patent number 11,848,379
- Issue date Dec 19, 2023
- Infineon Technologies Austria AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor component having a diode structure in a SiC semicondu...
- Patent number 11,742,391
- Issue date Aug 29, 2023
- Infineon Technologies AG
- Thomas Basler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide device with trench gate structure and method of man...
- Patent number 11,735,633
- Issue date Aug 22, 2023
- Infineon Technologies AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing a semiconductor device having spicular-shaped f...
- Patent number 11,682,703
- Issue date Jun 20, 2023
- Infineon Technologies Austria AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor transistor device and method of manufacturing the same
- Patent number 11,670,684
- Issue date Jun 6, 2023
- Infineon Technologies Austria AG
- Li Juin Yip
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide field-effect transistor including shielding areas
- Patent number 11,626,477
- Issue date Apr 11, 2023
- Infineon Technologies AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor device and method of fabricating a gate of a transistor...
- Patent number 11,600,723
- Issue date Mar 7, 2023
- Infineon Technologies Austria AG
- Ingmar Neumann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a transistor cell region and a terminat...
- Patent number 11,462,620
- Issue date Oct 4, 2022
- Infineon Technologies Austria AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC device with channel regions extending along at least one of the...
- Patent number 11,462,611
- Issue date Oct 4, 2022
- Infineon Technologies AG
- Thomas Aichinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor device with a varying gate runner resistivity per area
- Patent number 11,417,747
- Issue date Aug 16, 2022
- Infineon Technologies AG
- Thomas Aichinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide device and method for forming a silicon carbide device
- Patent number 11,367,683
- Issue date Jun 21, 2022
- Infineon Technologies AG
- Edward Fuergut
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide devices, semiconductor devices and methods for form...
- Patent number 11,342,433
- Issue date May 24, 2022
- Infineon Technologies AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,296,218
- Issue date Apr 5, 2022
- Infineon Technologies Austria AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide device with trench gate structure and method of man...
- Patent number 11,211,468
- Issue date Dec 28, 2021
- Infineon Technologies AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with silicon carbide body
- Patent number 11,195,921
- Issue date Dec 7, 2021
- Infineon Technologies AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Charge compensation MOSFET with graded epi profile and methods of m...
- Patent number 11,158,735
- Issue date Oct 26, 2021
- Infineon Technologies Austria AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor component with edge termination struc...
- Patent number 11,145,755
- Issue date Oct 12, 2021
- Infineon Technologies AG
- Larissa Wehrhahn-Kilian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including trench contact structure and manufac...
- Patent number 11,133,378
- Issue date Sep 28, 2021
- Infineon Technologies AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide field-effect transistor including shielding areas
- Patent number 11,101,343
- Issue date Aug 24, 2021
- Infineon Technologies AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor component comprising trench gate stru...
- Patent number 11,043,560
- Issue date Jun 22, 2021
- Infineon Technologies AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with spicular-shaped field plate structures an...
- Patent number 11,004,945
- Issue date May 11, 2021
- Infineon Technologies Austria AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor device with a rectifier element between a field electrod...
- Patent number 10,991,812
- Issue date Apr 27, 2021
- Infineon Technologies Austria AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor component
- Patent number 10,950,696
- Issue date Mar 16, 2021
- Infineon Technologies AG
- Thomas Basler
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING TRENCH GATE STRUCTURE AND BURIED SHI...
- Publication number 20250234588
- Publication date Jul 17, 2025
- INFINEON TECHNOLOGIES AG
- Ralf Siemieniec
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING TRENCH GATE STRUCTURE AND BURIED SHI...
- Publication number 20240222498
- Publication date Jul 4, 2024
- INFINEON TECHNOLOGIES AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR DEVICE AND METHOD FOR PRODUCING THEREOF
- Publication number 20230049364
- Publication date Feb 16, 2023
- Caspar Leendertz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING OHMIC CONTACTS ON A SILICON CARBIDE (SIC) S...
- Publication number 20230024105
- Publication date Jan 26, 2023
- INFINEON TECHNOLOGIES AG
- Werner SCHUSTEREDER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH DIODE CHAIN CONNECTED TO GATE METALLIZATION
- Publication number 20220406928
- Publication date Dec 22, 2022
- INFINEON TECHNOLOGIES AG
- Joachim Weyers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING NEEDLE-SHAPED FIRST FIELD PLATE STRUCTU...
- Publication number 20220376062
- Publication date Nov 24, 2022
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon Carbide Device and Method for Forming a Silicon Carbide Device
- Publication number 20220285283
- Publication date Sep 8, 2022
- Edward Fuergut
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIC MOSFET WITH REDUCED ON-RESISTANCE
- Publication number 20220262906
- Publication date Aug 18, 2022
- INFINEON TECHNOLOGIES AG
- Ralf SIEMIENIEC
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon Carbide Devices, Semiconductor Devices and Methods for Form...
- Publication number 20220246745
- Publication date Aug 4, 2022
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR DEVICE AND METHOD OF MANUFACTURING
- Publication number 20220246744
- Publication date Aug 4, 2022
- INFINEON TECHNOLOGIES AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE DEVICE WITH TRANSISTOR CELL AND CLAMP REGION
- Publication number 20220102549
- Publication date Mar 31, 2022
- Joachim Weyers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE DEVICE WITH TRANSISTOR CELL AND CLAMP REGIONS IN A...
- Publication number 20220102487
- Publication date Mar 31, 2022
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE DEVICE WITH STRIPE-SHAPED GATE ELECTRODE AND SOURCE...
- Publication number 20220093761
- Publication date Mar 24, 2022
- INFINEON TECHNOLOGIES AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE DEVICE WITH TRENCH GATE STRUCTURE
- Publication number 20220085186
- Publication date Mar 17, 2022
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Silicon Carbide Body and Method of Manufa...
- Publication number 20220059659
- Publication date Feb 24, 2022
- INFINEON TECHNOLOGIES AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOSFET HAVING A DRIFT REGION WITH A GRADED DOPING PROFILE AND METHO...
- Publication number 20220013665
- Publication date Jan 13, 2022
- Infineon Technologies Austria AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING TRENCH GATE STRUCTURE AND BURIED SHI...
- Publication number 20210408279
- Publication date Dec 30, 2021
- INFINEON TECHNOLOGIES AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon Carbide Semiconductor Component
- Publication number 20210343835
- Publication date Nov 4, 2021
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING A SILICON CARBIDE SEMICONDUCTOR COMPONENT
- Publication number 20210273054
- Publication date Sep 2, 2021
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR DEVICE AND METHOD OF FABRICATING A GATE OF A TRANSISTOR...
- Publication number 20210249534
- Publication date Aug 12, 2021
- Ingmar Neumann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Transistor Device and Method of Manufacturing the Same
- Publication number 20210249510
- Publication date Aug 12, 2021
- Li Juin Yip
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Charge Compensation MOSFET with Graded Epi Profile and Methods of M...
- Publication number 20210242340
- Publication date Aug 5, 2021
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF PRODUCING A SEMICONDUCTOR DEVICE HAVING SPICULAR-SHAPED F...
- Publication number 20210234010
- Publication date Jul 29, 2021
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR COMPONENT HAVING A DIODE STRUCTURE IN A SIC SEMICONDU...
- Publication number 20210159316
- Publication date May 27, 2021
- Thomas Basler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon Carbide Device with Trench Gate Structure and Method of Man...
- Publication number 20210134960
- Publication date May 6, 2021
- INFINEON TECHNOLOGIES AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SiC Device with Channel Regions Extending Along at least one of the...
- Publication number 20210118986
- Publication date Apr 22, 2021
- Thomas Aichinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR DEVICE WITH A VARYING GATE RUNNER RESISTIVITY PER AREA
- Publication number 20210119006
- Publication date Apr 22, 2021
- INFINEON TECHNOLOGIES AG
- Thomas AICHINGER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING A TRANSISTOR CELL REGION AND A TERMINAT...
- Publication number 20210066459
- Publication date Mar 4, 2021
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Including Trench Contact Structure and Manufac...
- Publication number 20210020740
- Publication date Jan 21, 2021
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Spicular-Shaped Field Plate Structures an...
- Publication number 20200373396
- Publication date Nov 26, 2020
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS

Ralf Siemieniec

Person

Patents Grantslast 30 patents

Semiconductor device including trench gate structure and buried shi...

Silicon carbide device with transistor cell and clamp regions in a...

Semiconductor device including trench gate structure and buried shi...

Method of manufacturing semiconductor device with silicon carbide body

Silicon carbide device with transistor cell and clamp region

Silicon carbide device and method for forming a silicon carbide device

Method for producing a silicon carbide semiconductor component

MOSFET having a drift region with a graded doping profile and metho...

Semiconductor component having a diode structure in a SiC semicondu...

Silicon carbide device with trench gate structure and method of man...

Method of producing a semiconductor device having spicular-shaped f...

Semiconductor transistor device and method of manufacturing the same

Silicon carbide field-effect transistor including shielding areas

Transistor device and method of fabricating a gate of a transistor...

Semiconductor device having a transistor cell region and a terminat...

SiC device with channel regions extending along at least one of the...

Transistor device with a varying gate runner resistivity per area

Silicon carbide device and method for forming a silicon carbide device

Silicon carbide devices, semiconductor devices and methods for form...

Semiconductor device

Silicon carbide device with trench gate structure and method of man...

Semiconductor device with silicon carbide body

Charge compensation MOSFET with graded epi profile and methods of m...

Silicon carbide semiconductor component with edge termination struc...

Semiconductor device including trench contact structure and manufac...

Silicon carbide field-effect transistor including shielding areas

Silicon carbide semiconductor component comprising trench gate stru...

Semiconductor device with spicular-shaped field plate structures an...

Transistor device with a rectifier element between a field electrod...

Silicon carbide semiconductor component

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE INCLUDING TRENCH GATE STRUCTURE AND BURIED SHI...

SEMICONDUCTOR DEVICE INCLUDING TRENCH GATE STRUCTURE AND BURIED SHI...

TRANSISTOR DEVICE AND METHOD FOR PRODUCING THEREOF

METHOD OF MANUFACTURING OHMIC CONTACTS ON A SILICON CARBIDE (SIC) S...

SEMICONDUCTOR DEVICE WITH DIODE CHAIN CONNECTED TO GATE METALLIZATION

SEMICONDUCTOR DEVICE HAVING NEEDLE-SHAPED FIRST FIELD PLATE STRUCTU...

Silicon Carbide Device and Method for Forming a Silicon Carbide Device

SIC MOSFET WITH REDUCED ON-RESISTANCE

Silicon Carbide Devices, Semiconductor Devices and Methods for Form...

TRANSISTOR DEVICE AND METHOD OF MANUFACTURING

SILICON CARBIDE DEVICE WITH TRANSISTOR CELL AND CLAMP REGION

SILICON CARBIDE DEVICE WITH TRANSISTOR CELL AND CLAMP REGIONS IN A...

SILICON CARBIDE DEVICE WITH STRIPE-SHAPED GATE ELECTRODE AND SOURCE...

SILICON CARBIDE DEVICE WITH TRENCH GATE STRUCTURE

Semiconductor Device with Silicon Carbide Body and Method of Manufa...

MOSFET HAVING A DRIFT REGION WITH A GRADED DOPING PROFILE AND METHO...

SEMICONDUCTOR DEVICE INCLUDING TRENCH GATE STRUCTURE AND BURIED SHI...

Silicon Carbide Semiconductor Component

METHOD FOR PRODUCING A SILICON CARBIDE SEMICONDUCTOR COMPONENT

TRANSISTOR DEVICE AND METHOD OF FABRICATING A GATE OF A TRANSISTOR...

Semiconductor Transistor Device and Method of Manufacturing the Same

Charge Compensation MOSFET with Graded Epi Profile and Methods of M...

METHOD OF PRODUCING A SEMICONDUCTOR DEVICE HAVING SPICULAR-SHAPED F...

SEMICONDUCTOR COMPONENT HAVING A DIODE STRUCTURE IN A SIC SEMICONDU...

Silicon Carbide Device with Trench Gate Structure and Method of Man...

SiC Device with Channel Regions Extending Along at least one of the...

TRANSISTOR DEVICE WITH A VARYING GATE RUNNER RESISTIVITY PER AREA

SEMICONDUCTOR DEVICE HAVING A TRANSISTOR CELL REGION AND A TERMINAT...

Semiconductor Device Including Trench Contact Structure and Manufac...

Semiconductor Device with Spicular-Shaped Field Plate Structures an...