Ran Wang

Person

Irving, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Dual stage sensing for non-volatile memory
- Patent number 8,537,587
- Issue date Sep 17, 2013
- Seagate Technology LLC
- Hai Li
- G11 - INFORMATION STORAGE
Information Patent Grant
Spin-transfer torque memory non-destructive self-reference read method
- Patent number 8,416,614
- Issue date Apr 9, 2013
- Seagate Technology LLC
- Yiran Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cell with proportional current self-reference sensing
- Patent number 8,203,899
- Issue date Jun 19, 2012
- Seagate Technology LLC
- Yiran Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Write current compensation using word line boosting circuitry
- Patent number 8,203,893
- Issue date Jun 19, 2012
- Seagate Technology LLC
- Hai Li
- G11 - INFORMATION STORAGE
Information Patent Grant
Spin-transfer torque memory non-destructive self-reference read method
- Patent number 8,116,123
- Issue date Feb 14, 2012
- Seagate Technology LLC
- Yiran Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Dual stage sensing for non-volatile memory
- Patent number 8,050,072
- Issue date Nov 1, 2011
- Seagate Technology LLC
- Hai Li
- G11 - INFORMATION STORAGE
Information Patent Grant
Write current compensation using word line boosting circuitry
- Patent number 8,009,457
- Issue date Aug 30, 2011
- Seagate Technology LLC
- Hai Li
- G11 - INFORMATION STORAGE
Information Patent Grant
Write current compensation using word line boosting circuitry
- Patent number 7,974,121
- Issue date Jul 5, 2011
- Seagate Technology LLC
- Hai Li
- G11 - INFORMATION STORAGE
Information Patent Grant
Write method with voltage line tuning
- Patent number 7,944,730
- Issue date May 17, 2011
- Seagate Technology LLC
- Yiran Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Write current compensation using word line boosting circuitry
- Patent number 7,855,923
- Issue date Dec 21, 2010
- Seagate Technology LLC
- Hai Li
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cell with proportional current self-reference sensing
- Patent number 7,852,665
- Issue date Dec 14, 2010
- Seagate Technology LLC
- Yiran Chen
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
NON-DESTRUCTIVE SELF-REFERENCE SPIN-TRANSFER TORQUE MEMORY
- Publication number 20130188420
- Publication date Jul 25, 2013
- Yiran Chen
- G11 - INFORMATION STORAGE
Information Patent Application
SPIN-TRANSFER TORQUE MEMORY NON-DESTRUCTIVE SELF-REFERENCE READ METHOD
- Publication number 20120127787
- Publication date May 24, 2012
- Seagate Technology LLC
- Yiran Chen
- G11 - INFORMATION STORAGE
Information Patent Application
Dual Stage Sensing for Non-Volatile Memory
- Publication number 20120014168
- Publication date Jan 19, 2012
- Seagate Technology LLC
- Hai Li
- G11 - INFORMATION STORAGE
Information Patent Application
WRITE CURRENT COMPENSATION USING WORD LINE BOOSTING CIRCUITRY
- Publication number 20110299324
- Publication date Dec 8, 2011
- Seagate Technology LLC
- Hai Li
- G11 - INFORMATION STORAGE
Information Patent Application
WRITE CURRENT COMPENSATION USING WORD LINE BOOSTING CIRCUITRY
- Publication number 20110080768
- Publication date Apr 7, 2011
- Seagate Technology LLC
- Hai Li
- G11 - INFORMATION STORAGE
Information Patent Application
WRITE CURRENT COMPENSATION USING WORD LINE BOOSTING CIRCUITRY
- Publication number 20110080782
- Publication date Apr 7, 2011
- Seagate Technology LLC
- Hai Li
- G11 - INFORMATION STORAGE
Information Patent Application
Memory Cell With Proportional Current Self-Reference Sensing
- Publication number 20110058405
- Publication date Mar 10, 2011
- Seagate Technology LLC
- Yiran Chen
- G11 - INFORMATION STORAGE
Information Patent Application
Memory Cell With Proportional Current Self-Reference Sensing
- Publication number 20100110785
- Publication date May 6, 2010
- Seagate Technology LLC
- Yiran Chen
- G11 - INFORMATION STORAGE
Information Patent Application
WRITE METHOD WITH VOLTAGE LINE TUNING
- Publication number 20100110762
- Publication date May 6, 2010
- Seagate Technology LLC
- Yiran Chen
- G11 - INFORMATION STORAGE
Information Patent Application
Write Current Compensation Using Word Line Boosting Circuitry
- Publication number 20100110763
- Publication date May 6, 2010
- Seagate Technology LLC
- Hai Li
- G11 - INFORMATION STORAGE
Information Patent Application
Integrated Circuit Active Power Supply Regulation
- Publication number 20100085110
- Publication date Apr 8, 2010
- Seagate Technology LLC
- Dong Jiao
- G05 - CONTROLLING REGULATING
Information Patent Application
DUAL STAGE SENSING FOR NON-VOLATILE MEMORY
- Publication number 20100085797
- Publication date Apr 8, 2010
- Seagate Technology LLC
- Hai Li
- G11 - INFORMATION STORAGE
Information Patent Application
SPIN-TRANSFER TORQUE MEMORY NON-DESTRUCTIVE SELF-REFERENCE READ METHOD
- Publication number 20090323403
- Publication date Dec 31, 2009
- Seagate Technology LLC
- Yiran Chen
- G11 - INFORMATION STORAGE

Person

Patents Grantslast 30 patents

Dual stage sensing for non-volatile memory

Spin-transfer torque memory non-destructive self-reference read method

Memory cell with proportional current self-reference sensing

Write current compensation using word line boosting circuitry

Spin-transfer torque memory non-destructive self-reference read method

Dual stage sensing for non-volatile memory

Write current compensation using word line boosting circuitry

Write current compensation using word line boosting circuitry

Write method with voltage line tuning

Write current compensation using word line boosting circuitry

Memory cell with proportional current self-reference sensing

Patents Applicationslast 30 patents

NON-DESTRUCTIVE SELF-REFERENCE SPIN-TRANSFER TORQUE MEMORY

SPIN-TRANSFER TORQUE MEMORY NON-DESTRUCTIVE SELF-REFERENCE READ METHOD

Dual Stage Sensing for Non-Volatile Memory

WRITE CURRENT COMPENSATION USING WORD LINE BOOSTING CIRCUITRY

WRITE CURRENT COMPENSATION USING WORD LINE BOOSTING CIRCUITRY

WRITE CURRENT COMPENSATION USING WORD LINE BOOSTING CIRCUITRY

Memory Cell With Proportional Current Self-Reference Sensing

Memory Cell With Proportional Current Self-Reference Sensing

WRITE METHOD WITH VOLTAGE LINE TUNING

Write Current Compensation Using Word Line Boosting Circuitry

Integrated Circuit Active Power Supply Regulation

DUAL STAGE SENSING FOR NON-VOLATILE MEMORY

SPIN-TRANSFER TORQUE MEMORY NON-DESTRUCTIVE SELF-REFERENCE READ METHOD