Randall Higuchi

Person

San Jose, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method for forming a doped metal oxide for use in resistive switchi...
- Patent number 9,543,516
- Issue date Jan 10, 2017
- Intermolecular, Inc.
- Jinhong Tong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doped oxide dielectrics for resistive random access memory cells
- Patent number 9,425,394
- Issue date Aug 23, 2016
- Intermolecular, Inc.
- Brian Butcher
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive switching layers including Hf-Al-O
- Patent number 9,276,203
- Issue date Mar 1, 2016
- Intermolecular, Inc.
- Chien-Lan Hsueh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low-temperature deposition of nitrides by UV-assisted ALD or CVD
- Patent number 9,246,099
- Issue date Jan 26, 2016
- Intermolecular, Inc.
- Chien-Lan Hsueh
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Atomic layer deposition of metal oxides for memory applications
- Patent number 9,246,096
- Issue date Jan 26, 2016
- Intermolecular, Inc.
- Zhendong Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Controlling composition of multiple oxides in resistive switching l...
- Patent number 9,065,040
- Issue date Jun 23, 2015
- Intermolecular, Inc.
- Chien-Lan Hsueh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Using saturated and unsaturated ALD processes to deposit oxides as...
- Patent number 9,040,413
- Issue date May 26, 2015
- Intermolecular, Inc.
- Randall J. Higuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nonvolatile resistive memory element with a silicon-based switching...
- Patent number 9,018,068
- Issue date Apr 28, 2015
- Intermolecular, Inc.
- Randall J. Higuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical oxide-oxide interface for forming-free, low power and low...
- Patent number 9,018,037
- Issue date Apr 28, 2015
- Intermolecular, Inc.
- Federico Nardi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Atomic layer deposition of metal oxides for memory applications
- Patent number 9,006,026
- Issue date Apr 14, 2015
- Intermolecular, Inc.
- Zhendong Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal aluminum nitride embedded resistors for resistive random memo...
- Patent number 9,006,696
- Issue date Apr 14, 2015
- Intermolecular, Inc.
- Mihir Tendulkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
ReRAM cells including TaXSiYN embedded resistors
- Patent number 8,969,129
- Issue date Mar 3, 2015
- Intermolecular, Inc.
- Chien-Lan Hsueh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Controlling composition of multiple oxides in resistive switching l...
- Patent number 8,883,557
- Issue date Nov 11, 2014
- Intermolecular, Inc.
- Chien-Lan Hsueh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal aluminum nitride embedded resistors for resistive random memo...
- Patent number 8,853,661
- Issue date Oct 7, 2014
- Intermolecular, Inc.
- Mihir Tendulkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Atomic layer deposition of metal oxides for memory applications
- Patent number 8,846,443
- Issue date Sep 30, 2014
- Intermolecular, Inc.
- Zhendong Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
ReRAM cells including TaXSiYN embedded resistors
- Patent number 8,835,890
- Issue date Sep 16, 2014
- Intermolecular, Inc.
- Chien-Lan Hsueh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming resistive switching memory elements
- Patent number 8,802,492
- Issue date Aug 12, 2014
- Intermolecular, Inc.
- Jinhong Tong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Interfacial oxide used as switching layer in a nonvolatile resistiv...
- Patent number 8,791,445
- Issue date Jul 29, 2014
- Intermolecular, Inc.
- Randall Higuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Atomic layer deposition of zirconium oxide for forming resistive-sw...
- Patent number 8,741,698
- Issue date Jun 3, 2014
- Intermolecular, Inc.
- Jinhong Tong
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
DRAM Capacitors and Methods for Forming the Same
- Publication number 20170117282
- Publication date Apr 27, 2017
- Intermolecular, Inc.
- Monica S. Mathur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method For Forming Resistive Switching Memory Elements
- Publication number 20160172588
- Publication date Jun 16, 2016
- Jinhong Tong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low-Temperature Deposition of Metal Silicon Nitrides from Silicon...
- Publication number 20160133837
- Publication date May 12, 2016
- INTERMOLECULAR INC.
- Chien-Lan Hsueh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of forming nitrides at low substrate temperatures
- Publication number 20150179316
- Publication date Jun 25, 2015
- INTERMOLECULAR INC.
- Chien-Lan Hsueh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Atomic Layer Deposition of Metal Oxides for Memory Applications
- Publication number 20150179935
- Publication date Jun 25, 2015
- INTERMOLECULAR INC.
- Zhendong Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low-temperature growth of complex compound films
- Publication number 20150176122
- Publication date Jun 25, 2015
- INTERMOLECULAR INC.
- Chien-Lan Hsueh
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Feature Size Reduction in Semiconductor Devices by Selective Wet Et...
- Publication number 20150170923
- Publication date Jun 18, 2015
- Intermolecular, Inc.
- Federico Nardi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Doped Oxide Dielectrics for Resistive Random Access Memory Cells
- Publication number 20150093876
- Publication date Apr 2, 2015
- INTERMOLECULAR INC.
- Brian Butcher
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTROLLING COMPOSITION OF MULTIPLE OXIDES IN RESISTIVE SWITCHING L...
- Publication number 20150060753
- Publication date Mar 5, 2015
- INTERMOLECULAR INC.
- Chien-Lan Hsueh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Metal Aluminum Nitride Embedded Resistors for Resistive Random Memo...
- Publication number 20140377931
- Publication date Dec 25, 2014
- Mihir Tendulkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Atomic Layer Deposition of Metal Oxides for Memory Applications
- Publication number 20140363920
- Publication date Dec 11, 2014
- Zhendong Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ReRAM Cells Including TaXSiYN Embedded Resistors
- Publication number 20140357046
- Publication date Dec 4, 2014
- Chien-Lan Hsueh
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Nonvolatile resistive memory element with a silicon-based switching...
- Publication number 20140322884
- Publication date Oct 30, 2014
- INTERMOLECULAR INC.
- Randall J. Higuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Metal Aluminum Nitride Embedded Resistors for Resistive Random Memo...
- Publication number 20140264223
- Publication date Sep 18, 2014
- INTERMOLECULAR INC.
- Mihir Tendulkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Resistive Switching Layers Including Hf-Al-O
- Publication number 20140175361
- Publication date Jun 26, 2014
- INTERMOLECULAR INC.
- Chien-Lan Hsueh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Bilayered Oxide Structures for ReRAM Cells
- Publication number 20140175360
- Publication date Jun 26, 2014
- INTERMOLECULAR INC.
- Mihir Tendulkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Using saturated and unsaturated ALD processes to deposit oxides as...
- Publication number 20140166956
- Publication date Jun 19, 2014
- INTERMOLECULAR INC.
- Randall J. Higuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods and Vehicles for High Productivity Combinatorial Testing of...
- Publication number 20140154859
- Publication date Jun 5, 2014
- INTERMOLECULAR INC.
- Vidyut Gopal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ReRAM Cells Including TaXSiYN Embedded Resistors
- Publication number 20140103284
- Publication date Apr 17, 2014
- INTERMOLECULAR INC.
- Chien-Lan Hsueh
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
INTERFACIAL OXIDE USED AS SWITCHING LAYER IN A NONVOLATILE RESISTIV...
- Publication number 20130228735
- Publication date Sep 5, 2013
- Intermolecular, Inc.
- Randall Higuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ATOMIC LAYER DEPOSITION OF ZIRCONIUM OXIDE FOR FORMING RESISTIVE-SW...
- Publication number 20130134376
- Publication date May 30, 2013
- Intermolecular, Inc.
- Jinhong Tong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING RESISTIVE SWITCHING MEMORY ELEMENTS
- Publication number 20130048937
- Publication date Feb 28, 2013
- Intermolecular, Inc.
- Jinhong Tong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ATOMIC LAYER DEPOSITION OF METAL OXIDES FOR MEMORY APPLICATIONS
- Publication number 20130034947
- Publication date Feb 7, 2013
- Intermolecular, Inc.
- Zhendong Hong
- H01 - BASIC ELECTRIC ELEMENTS

Randall Higuchi

Person

Patents Grantslast 30 patents

Method for forming a doped metal oxide for use in resistive switchi...

Doped oxide dielectrics for resistive random access memory cells

Resistive switching layers including Hf-Al-O

Low-temperature deposition of nitrides by UV-assisted ALD or CVD

Atomic layer deposition of metal oxides for memory applications

Controlling composition of multiple oxides in resistive switching l...

Using saturated and unsaturated ALD processes to deposit oxides as...

Nonvolatile resistive memory element with a silicon-based switching...

Vertical oxide-oxide interface for forming-free, low power and low...

Atomic layer deposition of metal oxides for memory applications

Metal aluminum nitride embedded resistors for resistive random memo...

ReRAM cells including TaXSiYN embedded resistors

Controlling composition of multiple oxides in resistive switching l...

Metal aluminum nitride embedded resistors for resistive random memo...

Atomic layer deposition of metal oxides for memory applications

ReRAM cells including TaXSiYN embedded resistors

Method for forming resistive switching memory elements

Interfacial oxide used as switching layer in a nonvolatile resistiv...

Atomic layer deposition of zirconium oxide for forming resistive-sw...

Patents Applicationslast 30 patents

DRAM Capacitors and Methods for Forming the Same

Method For Forming Resistive Switching Memory Elements

Low-Temperature Deposition of Metal Silicon Nitrides from Silicon...

Methods of forming nitrides at low substrate temperatures

Atomic Layer Deposition of Metal Oxides for Memory Applications

Low-temperature growth of complex compound films

Feature Size Reduction in Semiconductor Devices by Selective Wet Et...

Doped Oxide Dielectrics for Resistive Random Access Memory Cells

CONTROLLING COMPOSITION OF MULTIPLE OXIDES IN RESISTIVE SWITCHING L...

Metal Aluminum Nitride Embedded Resistors for Resistive Random Memo...

Atomic Layer Deposition of Metal Oxides for Memory Applications

ReRAM Cells Including TaXSiYN Embedded Resistors

Nonvolatile resistive memory element with a silicon-based switching...

Metal Aluminum Nitride Embedded Resistors for Resistive Random Memo...

Resistive Switching Layers Including Hf-Al-O

Bilayered Oxide Structures for ReRAM Cells

Using saturated and unsaturated ALD processes to deposit oxides as...

Methods and Vehicles for High Productivity Combinatorial Testing of...

ReRAM Cells Including TaXSiYN Embedded Resistors

INTERFACIAL OXIDE USED AS SWITCHING LAYER IN A NONVOLATILE RESISTIV...

ATOMIC LAYER DEPOSITION OF ZIRCONIUM OXIDE FOR FORMING RESISTIVE-SW...

METHOD FOR FORMING RESISTIVE SWITCHING MEMORY ELEMENTS

ATOMIC LAYER DEPOSITION OF METAL OXIDES FOR MEMORY APPLICATIONS