Randy J. Koval

Person

Boise, ID, US

People

Patents Grantslast 30 patents

Information Patent Grant
Methods and apparatuses including an asymmetric assist device
- Patent number 11,798,633
- Issue date Oct 24, 2023
- Micron Technology, Inc.
- Randy J. Koval
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor devices and methods of fabrication
- Patent number 11,626,424
- Issue date Apr 11, 2023
- Micron Technology, Inc.
- Hongbin Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and methods of fabrication
- Patent number 11,088,168
- Issue date Aug 10, 2021
- Micron Technology, Inc.
- Hongbin Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods and apparatuses including an asymmetric assist device
- Patent number 11,037,633
- Issue date Jun 15, 2021
- Micron Technology, Inc.
- Randy J. Koval
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory with storage nodes having a radius of curvature
- Patent number 10,825,831
- Issue date Nov 3, 2020
- Intel Corporation
- Randy J. Koval
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Modified floating gate and dielectric layer geometry in 3D memory a...
- Patent number 10,622,450
- Issue date Apr 14, 2020
- Intel Corporation
- Randy Koval
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and methods of fabrication
- Patent number 10,608,004
- Issue date Mar 31, 2020
- Micron Technology, Inc.
- Hongbin Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods and apparatuses including an asymmetric assist device
- Patent number 10,297,325
- Issue date May 21, 2019
- Micron Technology, Inc.
- Randy J. Koval
- G11 - INFORMATION STORAGE
Information Patent Grant
Vertical memory having varying storage cell design through the stor...
- Patent number 10,128,262
- Issue date Nov 13, 2018
- Intel Corporation
- Randy J. Koval
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and methods of fabrication
- Patent number 10,038,002
- Issue date Jul 31, 2018
- Micron Technology, Inc.
- Hongbin Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming a portion of a memory array having a conductor h...
- Patent number 9,953,842
- Issue date Apr 24, 2018
- Micron Technology, Inc.
- Randy J. Koval
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods and apparatuses including an asymmetric assist device
- Patent number 9,875,801
- Issue date Jan 23, 2018
- Micron Technology, Inc.
- Randy J. Koval
- G11 - INFORMATION STORAGE
Information Patent Grant
Local buried channel dielectric for vertical NAND performance enhan...
- Patent number 9,722,074
- Issue date Aug 1, 2017
- Intel Corporation
- Randy J. Koval
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned floating gate in a vertical memory structure
- Patent number 9,698,022
- Issue date Jul 4, 2017
- Intel Corporation
- Randy J. Koval
- G11 - INFORMATION STORAGE
Information Patent Grant
Conductors having a variable concentration of germanium for governi...
- Patent number 9,666,449
- Issue date May 30, 2017
- Micron Technology, Inc.
- Randy J. Koval
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned floating gate in a vertical memory structure
- Patent number 9,443,864
- Issue date Sep 13, 2016
- Intel Corporation
- Randy J. Koval
- G11 - INFORMATION STORAGE
Information Patent Grant
Self-aligned floating gate in a vertical memory structure
- Patent number 9,196,625
- Issue date Nov 24, 2015
- Intel Corporation
- Randy J. Koval
- G11 - INFORMATION STORAGE
Information Patent Grant
Local buried channel dielectric for vertical NAND performance enhan...
- Patent number 9,190,490
- Issue date Nov 17, 2015
- Intel Corporation
- Randy J. Koval
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Use of etch process post wordline definition to improve data retent...
- Patent number 9,082,714
- Issue date Jul 14, 2015
- Intel Corporation
- Randy J. Koval
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned floating gate in a vertical memory structure
- Patent number 8,878,279
- Issue date Nov 4, 2014
- Intel Corporation
- Randy J. Koval
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
FLOATING GATE NAND CELL – METHODS AND APPROACHES FOR FABRICATION
- Publication number 20240008270
- Publication date Jan 4, 2024
- Intel NDTM US LLC
- Vijay Saradhi MANGU
Information Patent Application
ENGINEERED DIELECTRIC PROFILE FOR HIGH ASPECT-RATIO 3D NAND STRUCTURES
- Publication number 20230282578
- Publication date Sep 7, 2023
- Intel NDTM US LLC
- Vijay Saradhi MANGU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL WORDLINE DRIVER STRUCTURES AND METHODS
- Publication number 20230232633
- Publication date Jul 20, 2023
- Intel NDTM US LLC
- David S. MEYAARD
- G11 - INFORMATION STORAGE
Information Patent Application
METAL HYBRID CHARGE STORAGE STRUCTURE FOR MEMORY
- Publication number 20220415908
- Publication date Dec 29, 2022
- Intel Corporation
- Guangyu Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D NAND WITH INTER-WORDLINE AIRGAP
- Publication number 20220406646
- Publication date Dec 22, 2022
- Intel Corporation
- Vijay Saradhi Mangu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL CHANNEL WITH CONDUCTIVE STRUCTURES TO IMPROVE STRING CURRENT
- Publication number 20220189987
- Publication date Jun 16, 2022
- Intel Corporation
- Henok T. MEBRAHTU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS OF FABRICATION
- Publication number 20210366931
- Publication date Nov 25, 2021
- Micron Technology, Inc.
- Hongbin Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS AND APPARATUSES INCLUDING AN ASYMMETRIC ASSIST DEVICE
- Publication number 20210280255
- Publication date Sep 9, 2021
- Micron Technology, Inc.
- Randy J. Koval
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS OF FABRICATION
- Publication number 20200227427
- Publication date Jul 16, 2020
- Micron Technology, Inc.
- Hongbin Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS AND APPARATUSES INCLUDING AN ASYMMETRIC ASSIST DEVICE
- Publication number 20190252026
- Publication date Aug 15, 2019
- Micron Technology, Inc.
- Randy J. Koval
- G11 - INFORMATION STORAGE
Information Patent Application
MODIFIED FLOATING GATE AND DIELECTRIC LAYER GEOMETRY IN 3D MEMORY A...
- Publication number 20190043960
- Publication date Feb 7, 2019
- Randy Koval
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS OF FABRICATION
- Publication number 20180315766
- Publication date Nov 1, 2018
- Micron Technology, Inc.
- Hongbin Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS AND APPARATUSES INCLUDING AN ASYMMETRIC ASSIST DEVICE
- Publication number 20180130536
- Publication date May 10, 2018
- Micron Technology, Inc.
- Randy J. Koval
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS OF FABRICATION
- Publication number 20180108669
- Publication date Apr 19, 2018
- Hongbin Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING A PORTION OF A MEMORY ARRAY HAVING A CONDUCTOR H...
- Publication number 20170263467
- Publication date Sep 14, 2017
- Micron Technology, Inc.
- Randy J. Koval
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical memory having varying storage cell design through the stor...
- Publication number 20170186765
- Publication date Jun 29, 2017
- Randy J. Koval
- G11 - INFORMATION STORAGE
Information Patent Application
SELF-ALIGNED FLOATING GATE IN A VERTICAL MEMORY STRUCTURE
- Publication number 20170011928
- Publication date Jan 12, 2017
- Intel Corporation
- Randy J. Koval
- G11 - INFORMATION STORAGE
Information Patent Application
LOCAL BURIED CHANNEL DIELECTRIC FOR VERTICAL NAND PERFORMANCE ENHAN...
- Publication number 20160190313
- Publication date Jun 30, 2016
- Intel Corporation
- Randy J. Koval
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONDUCTORS HAVING A VARIABLE CONCENTRATION OF GERMANIUM FOR GOVERNI...
- Publication number 20150364483
- Publication date Dec 17, 2015
- Micron Technology, Inc.
- Randy J. Koval
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED FLOATING GATE IN A VERTICAL MEMORY STRUCTURE
- Publication number 20150364486
- Publication date Dec 17, 2015
- Intel Corporation
- Randy J. Koval
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS AND APPARATUSES INCLUDING AN ASYMMETRIC ASSIST DEVICE
- Publication number 20150221347
- Publication date Aug 6, 2015
- Micron Technology, Inc.
- Randy J. Koval
- G11 - INFORMATION STORAGE
Information Patent Application
SELF-ALIGNED FLOATING GATE IN A VERTICAL MEMORY STRUCTURE
- Publication number 20150187785
- Publication date Jul 2, 2015
- Intel Corporation
- Randy J. Koval
- G11 - INFORMATION STORAGE
Information Patent Application
LOCAL BURIED CHANNEL DIELECTRIC FOR VERTICAL NAND PERFORMANCE ENHAN...
- Publication number 20140264527
- Publication date Sep 18, 2014
- Randy J. Koval
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED FLOATING GATE IN A VERTICAL MEMORY STRUCTURE
- Publication number 20140160841
- Publication date Jun 12, 2014
- Randy J. Koval
- G11 - INFORMATION STORAGE
Information Patent Application
USE OF ETCH PROCESS POST WORDLINE DEFINITION TO IMPROVE DATA RETENT...
- Publication number 20130264628
- Publication date Oct 10, 2013
- Randy J. Koval
- H01 - BASIC ELECTRIC ELEMENTS

Randy J. Koval

Person

Patents Grantslast 30 patents

Methods and apparatuses including an asymmetric assist device

Semiconductor devices and methods of fabrication

Semiconductor devices and methods of fabrication

Methods and apparatuses including an asymmetric assist device

Non-volatile memory with storage nodes having a radius of curvature

Modified floating gate and dielectric layer geometry in 3D memory a...

Semiconductor devices and methods of fabrication

Methods and apparatuses including an asymmetric assist device

Vertical memory having varying storage cell design through the stor...

Semiconductor devices and methods of fabrication

Methods of forming a portion of a memory array having a conductor h...

Methods and apparatuses including an asymmetric assist device

Local buried channel dielectric for vertical NAND performance enhan...

Self-aligned floating gate in a vertical memory structure

Conductors having a variable concentration of germanium for governi...

Self-aligned floating gate in a vertical memory structure

Self-aligned floating gate in a vertical memory structure

Local buried channel dielectric for vertical NAND performance enhan...

Use of etch process post wordline definition to improve data retent...

Self-aligned floating gate in a vertical memory structure

Patents Applicationslast 30 patents

FLOATING GATE NAND CELL – METHODS AND APPROACHES FOR FABRICATION

ENGINEERED DIELECTRIC PROFILE FOR HIGH ASPECT-RATIO 3D NAND STRUCTURES

VERTICAL WORDLINE DRIVER STRUCTURES AND METHODS

METAL HYBRID CHARGE STORAGE STRUCTURE FOR MEMORY

3D NAND WITH INTER-WORDLINE AIRGAP

VERTICAL CHANNEL WITH CONDUCTIVE STRUCTURES TO IMPROVE STRING CURRENT

SEMICONDUCTOR DEVICES AND METHODS OF FABRICATION

METHODS AND APPARATUSES INCLUDING AN ASYMMETRIC ASSIST DEVICE

SEMICONDUCTOR DEVICES AND METHODS OF FABRICATION

METHODS AND APPARATUSES INCLUDING AN ASYMMETRIC ASSIST DEVICE

MODIFIED FLOATING GATE AND DIELECTRIC LAYER GEOMETRY IN 3D MEMORY A...

SEMICONDUCTOR DEVICES AND METHODS OF FABRICATION

METHODS AND APPARATUSES INCLUDING AN ASYMMETRIC ASSIST DEVICE

SEMICONDUCTOR DEVICES AND METHODS OF FABRICATION

METHODS OF FORMING A PORTION OF A MEMORY ARRAY HAVING A CONDUCTOR H...

Vertical memory having varying storage cell design through the stor...

SELF-ALIGNED FLOATING GATE IN A VERTICAL MEMORY STRUCTURE

LOCAL BURIED CHANNEL DIELECTRIC FOR VERTICAL NAND PERFORMANCE ENHAN...

CONDUCTORS HAVING A VARIABLE CONCENTRATION OF GERMANIUM FOR GOVERNI...

SELF-ALIGNED FLOATING GATE IN A VERTICAL MEMORY STRUCTURE

METHODS AND APPARATUSES INCLUDING AN ASYMMETRIC ASSIST DEVICE

SELF-ALIGNED FLOATING GATE IN A VERTICAL MEMORY STRUCTURE

LOCAL BURIED CHANNEL DIELECTRIC FOR VERTICAL NAND PERFORMANCE ENHAN...

SELF-ALIGNED FLOATING GATE IN A VERTICAL MEMORY STRUCTURE

USE OF ETCH PROCESS POST WORDLINE DEFINITION TO IMPROVE DATA RETENT...