Rashmi Jha

Person

Toledo, OH, US

People

Patents Grantslast 30 patents

Information Patent Grant
Changing effective work function using ion implantation during dual...
- Patent number 9,564,505
- Issue date Feb 7, 2017
- GLOBALFOUNDRIES Inc.
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Changing effective work function using ion implantation during dual...
- Patent number 8,753,936
- Issue date Jun 17, 2014
- International Business Machines Corporation
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanoelectric memristor device with dilute magnetic semiconductors
- Patent number 8,502,343
- Issue date Aug 6, 2013
- The University of Toledo
- Rashmi Jha
- G11 - INFORMATION STORAGE
Information Patent Grant
Dual metal and dual dielectric integration for metal high-K FETs
- Patent number 8,436,427
- Issue date May 7, 2013
- International Business Machines Corporation
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate effective-workfunction modification for CMOS
- Patent number 8,183,642
- Issue date May 22, 2012
- International Business Machines Corporation
- Dae-Gyu Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
In-situ silicon cap for metal gate electrode
- Patent number 8,138,041
- Issue date Mar 20, 2012
- International Business Machines Corporation
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming dual high-K metal gate using photoresist mask an...
- Patent number 8,120,144
- Issue date Feb 21, 2012
- International Business Machines Corporation
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
PFET with tailored dielectric and related methods and integrated ci...
- Patent number 8,053,306
- Issue date Nov 8, 2011
- International Business Machines Corporation
- Rick Carter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method to control oxidation in high-k gate structures
- Patent number 7,955,926
- Issue date Jun 7, 2011
- International Business Machines Corporation
- Wesley C. Natzle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate effective-workfunction modification for CMOS
- Patent number 7,947,549
- Issue date May 24, 2011
- International Business Machines Corporation
- Dae-Gyu Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual metal and dual dielectric integration for metal high-k FETs
- Patent number 7,943,457
- Issue date May 17, 2011
- International Business Machines Corporation
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dielectric spacer removal
- Patent number 7,919,379
- Issue date Apr 5, 2011
- International Business Machines Corporation
- Eduard A. Cartier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming dual high-k metal gate using photoresist mask an...
- Patent number 7,915,115
- Issue date Mar 29, 2011
- International Business Machines Corporation
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having dual metal gates and method of manufacture
- Patent number 7,838,908
- Issue date Nov 23, 2010
- International Business Machines Corporation
- Unoh Kwon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for tuning the threshold voltage of a metal gate and high-k...
- Patent number 7,754,594
- Issue date Jul 13, 2010
- International Business Machines Corporation
- Michael P Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitrogen based plasma process for metal gate MOS device
- Patent number 7,498,271
- Issue date Mar 3, 2009
- International Business Machines Corporation
- Ricardo A. Donaton
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
CHANGING EFFECTIVE WORK FUNCTION USING ION IMPLANTATION DURING DUAL...
- Publication number 20140225199
- Publication date Aug 14, 2014
- International Business Machines Corporation
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL METAL AND DUAL DIELECTRIC INTEGRATION FOR METAL HIGH-K FETS
- Publication number 20110180880
- Publication date Jul 28, 2011
- International Business Machines Corporation
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING DUAL HIGH-K METAL GATE USING PHOTORESIST MASK AN...
- Publication number 20110121436
- Publication date May 26, 2011
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gate Effective-Workfunction Modification for CMOS
- Publication number 20110121401
- Publication date May 26, 2011
- International Business Machines Corporation
- Dae-Gyu Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL METAL AND DUAL DIELECTRIC INTEGRATION FOR METAL HIGH-K FETS
- Publication number 20100258881
- Publication date Oct 14, 2010
- International Business Machines Corporation
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND STRUCTURE FOR THRESHOLD VOLTAGE CONTROL AND DRIVE CURREN...
- Publication number 20100244206
- Publication date Sep 30, 2010
- International Business Machines Corporation
- Huiming Bu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR TUNING THE THRESHOLD VOLTAGE OF A METAL GATE AND HIGH-K...
- Publication number 20100187643
- Publication date Jul 29, 2010
- International Business Machines Corporation
- MICHAEL P. CHUDZIK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING DUAL METAL GATES AND METHOD OF MANUFACTURE
- Publication number 20100187610
- Publication date Jul 29, 2010
- International Business Machines Corporation
- Unoh Kwon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHANGING EFFECTIVE WORK FUNCTION USING ION IMPLANTATION DURING DUAL...
- Publication number 20100038725
- Publication date Feb 18, 2010
- International Business Machines Corporation
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IN-SITU SILICON CAP FOR METAL GATE ELECTRODE
- Publication number 20090308636
- Publication date Dec 17, 2009
- International Business Machines Corporation
- Michael P Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING DUAL HIGH-K METAL GATE USING PHOTORESIST MASK AN...
- Publication number 20090294920
- Publication date Dec 3, 2009
- International Business Machines Corporation
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD TO CONTROL OXIDATION IN HIGH-K GATE STRUCTURES
- Publication number 20090243031
- Publication date Oct 1, 2009
- International Business Machines Corporation
- Wesley C. Natzle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gate Effective-Workfunction Modification for CMOS
- Publication number 20090212369
- Publication date Aug 27, 2009
- International Business Machines Corporation
- Dae-Gyu Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE STACK STRUCTURE WITH OXYGEN GETTERING LAYER
- Publication number 20090152651
- Publication date Jun 18, 2009
- International Business Machines Corporation
- Huiming Bu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PFET WITH TAILORED DIELECTRIC AND RELATED METHODS AND INTEGRATED CI...
- Publication number 20090152637
- Publication date Jun 18, 2009
- International Business Machines Corporation
- Rick Carter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIELECTRIC SPACER REMOVAL
- Publication number 20090065817
- Publication date Mar 12, 2009
- International Business Machines Corporation
- Eduard A. Cartier
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Changing effective work function using ion implantation during dual...

Changing effective work function using ion implantation during dual...

Nanoelectric memristor device with dilute magnetic semiconductors

Dual metal and dual dielectric integration for metal high-K FETs

Gate effective-workfunction modification for CMOS

In-situ silicon cap for metal gate electrode

Method for forming dual high-K metal gate using photoresist mask an...

PFET with tailored dielectric and related methods and integrated ci...

Structure and method to control oxidation in high-k gate structures

Gate effective-workfunction modification for CMOS

Dual metal and dual dielectric integration for metal high-k FETs

Dielectric spacer removal

Method for forming dual high-k metal gate using photoresist mask an...

Semiconductor device having dual metal gates and method of manufacture

Method for tuning the threshold voltage of a metal gate and high-k...

Nitrogen based plasma process for metal gate MOS device

Patents Applicationslast 30 patents

CHANGING EFFECTIVE WORK FUNCTION USING ION IMPLANTATION DURING DUAL...

DUAL METAL AND DUAL DIELECTRIC INTEGRATION FOR METAL HIGH-K FETS

METHOD FOR FORMING DUAL HIGH-K METAL GATE USING PHOTORESIST MASK AN...

Gate Effective-Workfunction Modification for CMOS

DUAL METAL AND DUAL DIELECTRIC INTEGRATION FOR METAL HIGH-K FETS

METHOD AND STRUCTURE FOR THRESHOLD VOLTAGE CONTROL AND DRIVE CURREN...

METHOD FOR TUNING THE THRESHOLD VOLTAGE OF A METAL GATE AND HIGH-K...

SEMICONDUCTOR DEVICE HAVING DUAL METAL GATES AND METHOD OF MANUFACTURE

CHANGING EFFECTIVE WORK FUNCTION USING ION IMPLANTATION DURING DUAL...

IN-SITU SILICON CAP FOR METAL GATE ELECTRODE

METHOD FOR FORMING DUAL HIGH-K METAL GATE USING PHOTORESIST MASK AN...

STRUCTURE AND METHOD TO CONTROL OXIDATION IN HIGH-K GATE STRUCTURES

Gate Effective-Workfunction Modification for CMOS

GATE STACK STRUCTURE WITH OXYGEN GETTERING LAYER

PFET WITH TAILORED DIELECTRIC AND RELATED METHODS AND INTEGRATED CI...

DIELECTRIC SPACER REMOVAL