Ravi Keshav Joshi

Person

Villach, AT

People

Patents Grantslast 30 patents

Information Patent Grant
Method of manufacturing semiconductor device with silicon carbide body
- Patent number 11,881,512
- Issue date Jan 23, 2024
- Infineon Technologies AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for forming a semiconductor device
- Patent number 11,842,938
- Issue date Dec 12, 2023
- Infineon Technologies AG
- Jens Peter Konrath
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Superjunction device with oxygen inserted Si-layers
- Patent number 11,545,545
- Issue date Jan 3, 2023
- Infineon Technologies Austria AG
- Martin Poelzl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Passivation structuring and plating for semiconductor devices
- Patent number 11,387,095
- Issue date Jul 12, 2022
- Infineon Technologies Austria AG
- Ravi Keshav Joshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide device and method for forming a silicon carbide device
- Patent number 11,367,683
- Issue date Jun 21, 2022
- Infineon Technologies AG
- Edward Fuergut
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for forming a semiconductor device
- Patent number 11,217,500
- Issue date Jan 4, 2022
- Infineon Technologies AG
- Jens Peter Konrath
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with silicon carbide body
- Patent number 11,195,921
- Issue date Dec 7, 2021
- Infineon Technologies AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming oxygen inserted Si-layers in power semiconductor...
- Patent number 11,031,466
- Issue date Jun 8, 2021
- Infineon Technologies Austria AG
- Martin Poelzl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device having a power metal...
- Patent number 10,978,395
- Issue date Apr 13, 2021
- Infineon Technologies Austria AG
- Ravi Keshav Joshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanotube structure based metal damascene process
- Patent number 10,910,309
- Issue date Feb 2, 2021
- Infineon Technologies AG
- Ravi Joshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical trench power devices with oxygen inserted Si-layers
- Patent number 10,861,966
- Issue date Dec 8, 2020
- Infineon Technologies Austria AG
- Thomas Feil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with superjunction and oxygen inserted Si-layers
- Patent number 10,790,353
- Issue date Sep 29, 2020
- Infineon Technologies Austria AG
- Martin Poelzl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device having a metal adhesion and ba...
- Patent number 10,777,506
- Issue date Sep 15, 2020
- Infineon Technologies AG
- Frank Hille
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Battery, integrated circuit and method of manufacturing a battery
- Patent number 10,749,216
- Issue date Aug 18, 2020
- Infineon Technologies AG
- Ravi Keshav Joshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Oxygen inserted Si-layers for reduced substrate dopant outdiffusion...
- Patent number 10,741,638
- Issue date Aug 11, 2020
- Infineon Technologies Austria AG
- Martin Poelzl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power metallization structure for semiconductor devices
- Patent number 10,734,320
- Issue date Aug 4, 2020
- Infineon Technologies Austria AG
- Ravi Keshav Joshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC device with buried doped region
- Patent number 10,580,878
- Issue date Mar 3, 2020
- Infineon Technologies AG
- Ravi Keshav Joshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Oxygen inserted Si-layers in vertical trench power devices
- Patent number 10,573,742
- Issue date Feb 25, 2020
- Infineon Technologies Austria AG
- Thomas Feil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a metal adhesion and barrier structure...
- Patent number 10,475,743
- Issue date Nov 12, 2019
- Infineon Technologies AG
- Frank Hille
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming recombination centers in a semiconductor device
- Patent number 10,347,491
- Issue date Jul 9, 2019
- Infineon Technologies Austria AG
- Wolfgang Jantscher
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor wafer and method for processing a semiconductor wafer
- Patent number 10,325,803
- Issue date Jun 18, 2019
- Infineon Technologies AG
- Matthias Kuenle
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Forming a metal contact layer on silicon carbide and semiconductor...
- Patent number 10,256,097
- Issue date Apr 9, 2019
- Infineon Technologies AG
- Ravi Keshav Joshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor devices with transistor cells...
- Patent number 10,121,859
- Issue date Nov 6, 2018
- Infineon Technologies AG
- Ravi Keshav Joshi
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
Self aligned silicon carbide contact formation using protective layer
- Patent number 10,049,879
- Issue date Aug 14, 2018
- Infineon Technologies AG
- Ravi Keshav Joshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanotube structure based metal damascene process
- Patent number 10,043,750
- Issue date Aug 7, 2018
- Infineon Technologies AG
- Ravi Joshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor wafer and method for processing a semiconductor wafer
- Patent number 9,984,915
- Issue date May 29, 2018
- Infineon Technologies AG
- Matthias Kuenle
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Lithium ion battery, integrated circuit and method of manufacturing...
- Patent number 9,917,333
- Issue date Mar 13, 2018
- Infineon Technologies AG
- Vijaye Kumar Rajaraman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Carbon based contact structure for silicon carbide device technical...
- Patent number 9,917,170
- Issue date Mar 13, 2018
- Infineon Technologies AG
- Ravi Joshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device and method for manufacturing a device with a barrier layer
- Patent number 9,899,325
- Issue date Feb 20, 2018
- Infineon Technologies AG
- Ravi Joshi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Intermediate layer for copper structuring and methods of formation...
- Patent number 9,773,736
- Issue date Sep 26, 2017
- Infineon Technologies AG
- Ravi Keshav Joshi
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
VERTICAL POWER SEMICONDUCTOR DEVICE COMPRISING SOURCE OR EMITTER PAD
- Publication number 20240347456
- Publication date Oct 17, 2024
- INFINEON TECHNOLOGIES AG
- Ravi Keshav JOSHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon Carbide Device and Method for Forming a Silicon Carbide Device
- Publication number 20240113026
- Publication date Apr 4, 2024
- INFINEON TECHNOLOGIES AG
- Edward Fürgut
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING A CONTACT ON A SILICON CARBIDE SUBSTRATE,...
- Publication number 20240055257
- Publication date Feb 15, 2024
- INFINEON TECHNOLOGIES AG
- Saurabh Roy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING A CONTACT ON A SILICON CARBIDE SEMICONDUCT...
- Publication number 20240055256
- Publication date Feb 15, 2024
- INFINEON TECHNOLOGIES AG
- Ravi Keshav JOSHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING A CONTACT ON A SILICON CARBIDE SEMICONDUCT...
- Publication number 20240030032
- Publication date Jan 25, 2024
- INFINEON TECHNOLOGIES AG
- Saurabh ROY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE DEVICE WITH METALLIC INTERFACE LAYERS AND METHOD OF...
- Publication number 20230253454
- Publication date Aug 10, 2023
- INFINEON TECHNOLOGIES AG
- Ravi Keshav Joshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH METAL NITRIDE LAYER AND A METHOD OF MANUF...
- Publication number 20230238442
- Publication date Jul 27, 2023
- INFINEON TECHNOLOGIES AG
- Ravi Keshav JOSHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING OHMIC CONTACTS ON A SILICON CARBIDE (SIC) S...
- Publication number 20230024105
- Publication date Jan 26, 2023
- INFINEON TECHNOLOGIES AG
- Werner SCHUSTEREDER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE HAVING A STRUCTURED METALLIZATION LAYER
- Publication number 20220285149
- Publication date Sep 8, 2022
- Infineon Technologies Austria AG
- Ravi Keshav Joshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon Carbide Device and Method for Forming a Silicon Carbide Device
- Publication number 20220285283
- Publication date Sep 8, 2022
- Edward Fuergut
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIC MOSFET WITH REDUCED ON-RESISTANCE
- Publication number 20220262906
- Publication date Aug 18, 2022
- INFINEON TECHNOLOGIES AG
- Ralf SIEMIENIEC
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method for Forming a Semiconductor Device
- Publication number 20220093483
- Publication date Mar 24, 2022
- Jens Peter Konrath
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Silicon Carbide Body and Method of Manufa...
- Publication number 20220059659
- Publication date Feb 24, 2022
- INFINEON TECHNOLOGIES AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PASSIVATION STRUCTURING AND PLATING FOR SEMICONDUCTOR DEVICES
- Publication number 20220059347
- Publication date Feb 24, 2022
- Ravi Keshav Joshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Superjunction Device with Oxygen Inserted Si-Layers
- Publication number 20200350401
- Publication date Nov 5, 2020
- Martin Poelzl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Manufacturing a Semiconductor Device Having a Power Metal...
- Publication number 20200335448
- Publication date Oct 22, 2020
- Ravi Keshav Joshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Forming Oxygen Inserted Si-Layers in Power Semiconductor...
- Publication number 20200303498
- Publication date Sep 24, 2020
- Martin Poelzl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Superjunction and Oxygen Inserted Si-Layers
- Publication number 20200152733
- Publication date May 14, 2020
- Infineon Technologies Austria AG
- Martin Poelzl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical Trench Power Devices with Oxygen Inserted Si-Layers
- Publication number 20200127135
- Publication date Apr 23, 2020
- Thomas Feil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistor Device and Method for Forming a Recess for a Trench Gate...
- Publication number 20200111896
- Publication date Apr 9, 2020
- Thomas Feil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SiC Device with Buried Doped Region
- Publication number 20200058760
- Publication date Feb 20, 2020
- INFINEON TECHNOLOGIES AG
- Ravi Keshav Joshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Oxygen Inserted Si-Layers in Vertical Trench Power Devices
- Publication number 20200052110
- Publication date Feb 13, 2020
- Infineon Technologies Austria AG
- Thomas Feil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Oxygen Inserted Si-Layers for Reduced Substrate Dopant Outdiffusion...
- Publication number 20200052066
- Publication date Feb 13, 2020
- Infineon Technologies Austria AG
- Martin Poelzl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Metallization Structure for Semiconductor Devices
- Publication number 20200035610
- Publication date Jan 30, 2020
- Infineon Technologies Austria AG
- Ravi Keshav Joshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon Carbide Device and Method for Forming a Silicon Carbide Device
- Publication number 20200013723
- Publication date Jan 9, 2020
- Edward Fuergut
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon Carbide Semiconductor Device Having a Metal Adhesion and Ba...
- Publication number 20200013722
- Publication date Jan 9, 2020
- Frank Hille
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Silicon Carbide Body and Method of Manufa...
- Publication number 20190355819
- Publication date Nov 21, 2019
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Manufacturing
- Publication number 20190333765
- Publication date Oct 31, 2019
- Markus Kahn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method for Forming a Semiconductor Device
- Publication number 20190311966
- Publication date Oct 10, 2019
- INFINEON TECHNOLOGIES AG
- Jens Peter Konrath
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Controlling the Reflow Behaviour of BPSG Films and Devices Made The...
- Publication number 20180247820
- Publication date Aug 30, 2018
- Infineon Technologies Austria AG
- Juergen Steinbrenner
- H01 - BASIC ELECTRIC ELEMENTS

Ravi Keshav Joshi

Person

Patents Grantslast 30 patents

Method of manufacturing semiconductor device with silicon carbide body

Semiconductor device and method for forming a semiconductor device

Superjunction device with oxygen inserted Si-layers

Passivation structuring and plating for semiconductor devices

Silicon carbide device and method for forming a silicon carbide device

Semiconductor device and method for forming a semiconductor device

Semiconductor device with silicon carbide body

Method of forming oxygen inserted Si-layers in power semiconductor...

Method of manufacturing a semiconductor device having a power metal...

Nanotube structure based metal damascene process

Vertical trench power devices with oxygen inserted Si-layers

Semiconductor device with superjunction and oxygen inserted Si-layers

Silicon carbide semiconductor device having a metal adhesion and ba...

Battery, integrated circuit and method of manufacturing a battery

Oxygen inserted Si-layers for reduced substrate dopant outdiffusion...

Power metallization structure for semiconductor devices

SiC device with buried doped region

Oxygen inserted Si-layers in vertical trench power devices

Semiconductor device having a metal adhesion and barrier structure...

Forming recombination centers in a semiconductor device

Semiconductor wafer and method for processing a semiconductor wafer

Forming a metal contact layer on silicon carbide and semiconductor...

Method of manufacturing semiconductor devices with transistor cells...

Self aligned silicon carbide contact formation using protective layer

Nanotube structure based metal damascene process

Semiconductor wafer and method for processing a semiconductor wafer

Lithium ion battery, integrated circuit and method of manufacturing...

Carbon based contact structure for silicon carbide device technical...

Device and method for manufacturing a device with a barrier layer

Intermediate layer for copper structuring and methods of formation...

Patents Applicationslast 30 patents

VERTICAL POWER SEMICONDUCTOR DEVICE COMPRISING SOURCE OR EMITTER PAD

Silicon Carbide Device and Method for Forming a Silicon Carbide Device

METHOD FOR MANUFACTURING A CONTACT ON A SILICON CARBIDE SUBSTRATE,...

METHOD FOR MANUFACTURING A CONTACT ON A SILICON CARBIDE SEMICONDUCT...

METHOD FOR MANUFACTURING A CONTACT ON A SILICON CARBIDE SEMICONDUCT...

SILICON CARBIDE DEVICE WITH METALLIC INTERFACE LAYERS AND METHOD OF...

SEMICONDUCTOR DEVICE WITH METAL NITRIDE LAYER AND A METHOD OF MANUF...

METHOD OF MANUFACTURING OHMIC CONTACTS ON A SILICON CARBIDE (SIC) S...

POWER SEMICONDUCTOR DEVICE HAVING A STRUCTURED METALLIZATION LAYER

Silicon Carbide Device and Method for Forming a Silicon Carbide Device

SIC MOSFET WITH REDUCED ON-RESISTANCE

Semiconductor Device and Method for Forming a Semiconductor Device

Semiconductor Device with Silicon Carbide Body and Method of Manufa...

PASSIVATION STRUCTURING AND PLATING FOR SEMICONDUCTOR DEVICES

Superjunction Device with Oxygen Inserted Si-Layers

Method of Manufacturing a Semiconductor Device Having a Power Metal...

Method of Forming Oxygen Inserted Si-Layers in Power Semiconductor...

Semiconductor Device with Superjunction and Oxygen Inserted Si-Layers

Vertical Trench Power Devices with Oxygen Inserted Si-Layers

Transistor Device and Method for Forming a Recess for a Trench Gate...

SiC Device with Buried Doped Region

Oxygen Inserted Si-Layers in Vertical Trench Power Devices

Oxygen Inserted Si-Layers for Reduced Substrate Dopant Outdiffusion...

Power Metallization Structure for Semiconductor Devices

Silicon Carbide Device and Method for Forming a Silicon Carbide Device

Silicon Carbide Semiconductor Device Having a Metal Adhesion and Ba...

Semiconductor Device with Silicon Carbide Body and Method of Manufa...

Semiconductor Device and Manufacturing

Semiconductor Device and Method for Forming a Semiconductor Device

Controlling the Reflow Behaviour of BPSG Films and Devices Made The...