Ravikumar Ramachandran

Person

Pleasantville, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Gate stacks with multiple high-κ dielectric layers
- Patent number 11,961,895
- Issue date Apr 16, 2024
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High aspect ratio shared contacts
- Patent number 11,935,929
- Issue date Mar 19, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked FET SRAM
- Patent number 11,895,818
- Issue date Feb 6, 2024
- International Business Machines Corporation
- Ruilong Xie
- G11 - INFORMATION STORAGE
Information Patent Grant
FinFET based ZRAM with convex channel region
- Patent number 11,139,299
- Issue date Oct 5, 2021
- International Business Machines Corporation
- Ravikumar Ramachandran
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabricating tapered semiconductor devices
- Patent number 10,832,971
- Issue date Nov 10, 2020
- International Business Machines Corporation
- Rajasekhar Venigalla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reliable gate contacts over active areas
- Patent number 10,693,005
- Issue date Jun 23, 2020
- International Business Machines Corporation
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Preserving channel strain in fin cuts
- Patent number 10,573,646
- Issue date Feb 25, 2020
- International Business Machines Corporation
- Andrew M. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Standard cell architecture with at least one gate contact over an a...
- Patent number 10,424,574
- Issue date Sep 24, 2019
- International Business Machines Corporation
- Albert M. Chu
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Standard cell architecture with at least one gate contact over an a...
- Patent number 10,424,576
- Issue date Sep 24, 2019
- International Business Machines Corporation
- Albert M. Chu
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Finfet based ZRAM with convex channel region
- Patent number 10,403,628
- Issue date Sep 3, 2019
- International Business Machines Corporation
- Ravikumar Ramachandran
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reliable gate contacts over active areas
- Patent number 10,381,480
- Issue date Aug 13, 2019
- International Business Machines Corporation
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Preserving channel strain in fin cuts
- Patent number 10,256,238
- Issue date Apr 9, 2019
- International Business Machines Corporation
- Andrew M. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor fin isolation by a well trapping fin portion
- Patent number 10,242,980
- Issue date Mar 26, 2019
- International Business Machines Corporation
- Henry K. Utomo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shallow trench isolation structures and contact patterning
- Patent number 10,242,918
- Issue date Mar 26, 2019
- International Business Machines Corporation
- Andrew M. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shallow trench isolation structures and contact patterning
- Patent number 10,177,039
- Issue date Jan 8, 2019
- International Business Machines Corporation
- Andrew M. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method to prevent EPI short between trenches in FinFE...
- Patent number 10,177,154
- Issue date Jan 8, 2019
- International Business Machines Corporation
- Michael V. Aquilino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Preserving channel strain in fin cuts
- Patent number 10,128,239
- Issue date Nov 13, 2018
- International Business Machines Corporation
- Andrew M. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Partial spacer for increasing self aligned contact process margins
- Patent number 10,083,865
- Issue date Sep 25, 2018
- International Business Machines Corporation
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self aligned contact structure
- Patent number 10,074,562
- Issue date Sep 11, 2018
- International Business Machines Corporation
- Rosa A. Orozco-Teran
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact first replacement metal gate
- Patent number 9,985,104
- Issue date May 29, 2018
- International Business Machines Corporation
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Partial spacer for increasing self aligned contact process margins
- Patent number 9,929,047
- Issue date Mar 27, 2018
- International Business Machines Corporation
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method to prevent EPI short between trenches in FINFE...
- Patent number 9,818,741
- Issue date Nov 14, 2017
- International Business Machines Corporation
- Michael V. Aquilino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming stressed epitaxial layers between gates separated by differ...
- Patent number 9,818,873
- Issue date Nov 14, 2017
- GLOBALFOUNDRIES Inc.
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dynamic random access memory cell with self-aligned strap
- Patent number 9,735,162
- Issue date Aug 15, 2017
- International Business Machines Corporation
- John E. Barth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Protection of semiconductor-oxide-containing gate dielectric during...
- Patent number 9,577,068
- Issue date Feb 21, 2017
- International Business Machines Corporation
- Gregory Costrini
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dynamic random access memory cell with self-aligned strap
- Patent number 9,564,443
- Issue date Feb 7, 2017
- International Business Machines Corporation
- John E. Barth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned contact structure
- Patent number 9,548,244
- Issue date Jan 17, 2017
- International Business Machines Corporation
- Rosa A. Orozco-Teran
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming fins of different semiconductor materials on the same subst...
- Patent number 9,536,900
- Issue date Jan 3, 2017
- GLOBALFOUNDRIES INC.
- Ravikumar Ramachandran
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact first replacement metal gate
- Patent number 9,496,362
- Issue date Nov 15, 2016
- International Business Machines Corporation
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Partial spacer for increasing self aligned contact process margins
- Patent number 9,496,368
- Issue date Nov 15, 2016
- International Business Machines Corporation
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
MIDDLE OF LINE CONTACT FOR ADVANCED NODES
- Publication number 20240321982
- Publication date Sep 26, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IRREGULAR-SHAPED POWER RAIL IN CELL POWER DISTRIBUTION
- Publication number 20240321748
- Publication date Sep 26, 2024
- International Business Machines Corporation
- Lawrence A. Clevenger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSHEET WITH GRADED SILICON GERMANIUM LAYER UNDER ISOLATION REGIO...
- Publication number 20240145238
- Publication date May 2, 2024
- International Business Machines Corporation
- Reinaldo Vega
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSHEET WITH DUAL ISOLATION REGIONS SEPARATED BY BURIED INNER SPACER
- Publication number 20240145578
- Publication date May 2, 2024
- International Business Machines Corporation
- Reinaldo Vega
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCED GATE TOP CD WITH WRAP-AROUND GATE CONTACT
- Publication number 20240128345
- Publication date Apr 18, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE TO FORM AND INTEGRATE HIGH VOLTAGE FINFET I/O DEVICE WITH...
- Publication number 20240105769
- Publication date Mar 28, 2024
- International Business Machines Corporation
- Shahab Siddiqui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR BACKSIDE TRANSISTOR INTEGRATION WITH BACKSIDE POWER D...
- Publication number 20240105605
- Publication date Mar 28, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED FET SRAM
- Publication number 20240008242
- Publication date Jan 4, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUBTRACTIVE SOURCE DRAIN CONTACT FOR STACKED DEVICES
- Publication number 20230420502
- Publication date Dec 28, 2023
- International Business Machines Corporation
- Heng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND STRUCTURE OF FORMING INDEPENDENT CONTACT FOR STAGGERED CFET
- Publication number 20230411358
- Publication date Dec 21, 2023
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND STRUCTURE OF FORMING SIDEWALL CONTACT FOR STACKED FET
- Publication number 20230411397
- Publication date Dec 21, 2023
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED FET SRAM
- Publication number 20230345690
- Publication date Oct 26, 2023
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ASPECT RATIO SHARED CONTACTS
- Publication number 20230130305
- Publication date Apr 27, 2023
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE STACKS WITH MULTIPLE HIGH-K DIELECTRIC LAYERS
- Publication number 20230075740
- Publication date Mar 9, 2023
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATING TAPERED SEMICONDUCTOR DEVICES
- Publication number 20200075428
- Publication date Mar 5, 2020
- International Business Machines Corporation
- Rajasekhar VENIGALLA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET BASED ZRAM WITH CONVEX CHANNEL REGION
- Publication number 20190304980
- Publication date Oct 3, 2019
- International Business Machines Corporation
- Ravikumar Ramachandran
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RELIABLE GATE CONTACTS OVER ACTIVE AREAS
- Publication number 20190259869
- Publication date Aug 22, 2019
- International Business Machines Corporation
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RELIABLE GATE CONTACTS OVER ACTIVE AREAS
- Publication number 20190097016
- Publication date Mar 28, 2019
- International Business Machines Corporation
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PRESERVING CHANNEL STRAIN IN FIN CUTS
- Publication number 20180323193
- Publication date Nov 8, 2018
- International Business Machines Corporation
- Andrew M. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PRESERVING CHANNEL STRAIN IN FIN CUTS
- Publication number 20180323194
- Publication date Nov 8, 2018
- International Business Machines Corporation
- Andrew M. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHALLOW TRENCH ISOLATION STRUCTURES AND CONTACT PATTERNING
- Publication number 20180226299
- Publication date Aug 9, 2018
- International Business Machines Corporation
- Andrew M. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHALLOW TRENCH ISOLATION STRUCTURES AND CONTACT PATTERNING
- Publication number 20180226298
- Publication date Aug 9, 2018
- International Business Machines Corporation
- Andrew M. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STANDARD CELL ARCHITECTURE WITH AT LEAST ONE GATE CONTACT OVER AN A...
- Publication number 20180211948
- Publication date Jul 26, 2018
- International Business Machines Corporation
- Albert M. Chu
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
STANDARD CELL ARCHITECTURE WITH AT LEAST ONE GATE CONTACT OVER AN A...
- Publication number 20180211947
- Publication date Jul 26, 2018
- International Business Machines Corporation
- Albert M. Chu
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
PRESERVING CHANNEL STRAIN IN FIN CUTS
- Publication number 20180108655
- Publication date Apr 19, 2018
- International Business Machines Corporation
- Andrew M. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PARTIAL SPACER FOR INCREASING SELF ALIGNED CONTACT PROCESS MARGINS
- Publication number 20180068893
- Publication date Mar 8, 2018
- International Business Machines Corporation
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD TO PREVENT EPI SHORT BETWEEN TRENCHES IN FINFE...
- Publication number 20170365606
- Publication date Dec 21, 2017
- International Business Machines Corporation
- Michael V. Aquilino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT FIRST REPLACEMENT METAL GATE
- Publication number 20170194452
- Publication date Jul 6, 2017
- International Business Machines Corporation
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING STRESSED EPITAXIAL LAYER USING DUMMY GATES
- Publication number 20170104100
- Publication date Apr 13, 2017
- GLOBALFOUNDRIES INC.
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR FIN ISOLATION BY A WELL TRAPPING FIN PORTION
- Publication number 20170040320
- Publication date Feb 9, 2017
- International Business Machines Corporation
- Henry K. Utomo
- H01 - BASIC ELECTRIC ELEMENTS

Ravikumar Ramachandran

Person

Patents Grantslast 30 patents

Gate stacks with multiple high-κ dielectric layers

High aspect ratio shared contacts

Stacked FET SRAM

FinFET based ZRAM with convex channel region

Fabricating tapered semiconductor devices

Reliable gate contacts over active areas

Preserving channel strain in fin cuts

Standard cell architecture with at least one gate contact over an a...

Standard cell architecture with at least one gate contact over an a...

Finfet based ZRAM with convex channel region

Reliable gate contacts over active areas

Preserving channel strain in fin cuts

Semiconductor fin isolation by a well trapping fin portion

Shallow trench isolation structures and contact patterning

Shallow trench isolation structures and contact patterning

Structure and method to prevent EPI short between trenches in FinFE...

Preserving channel strain in fin cuts

Partial spacer for increasing self aligned contact process margins

Self aligned contact structure

Contact first replacement metal gate

Partial spacer for increasing self aligned contact process margins

Structure and method to prevent EPI short between trenches in FINFE...

Forming stressed epitaxial layers between gates separated by differ...

Dynamic random access memory cell with self-aligned strap

Protection of semiconductor-oxide-containing gate dielectric during...

Dynamic random access memory cell with self-aligned strap

Self-aligned contact structure

Forming fins of different semiconductor materials on the same subst...

Contact first replacement metal gate

Partial spacer for increasing self aligned contact process margins

Patents Applicationslast 30 patents

MIDDLE OF LINE CONTACT FOR ADVANCED NODES

IRREGULAR-SHAPED POWER RAIL IN CELL POWER DISTRIBUTION

NANOSHEET WITH GRADED SILICON GERMANIUM LAYER UNDER ISOLATION REGIO...

NANOSHEET WITH DUAL ISOLATION REGIONS SEPARATED BY BURIED INNER SPACER

REDUCED GATE TOP CD WITH WRAP-AROUND GATE CONTACT

STRUCTURE TO FORM AND INTEGRATE HIGH VOLTAGE FINFET I/O DEVICE WITH...

SEMICONDUCTOR BACKSIDE TRANSISTOR INTEGRATION WITH BACKSIDE POWER D...

STACKED FET SRAM

SUBTRACTIVE SOURCE DRAIN CONTACT FOR STACKED DEVICES

METHOD AND STRUCTURE OF FORMING INDEPENDENT CONTACT FOR STAGGERED CFET

METHOD AND STRUCTURE OF FORMING SIDEWALL CONTACT FOR STACKED FET

STACKED FET SRAM

HIGH ASPECT RATIO SHARED CONTACTS

GATE STACKS WITH MULTIPLE HIGH-K DIELECTRIC LAYERS

FABRICATING TAPERED SEMICONDUCTOR DEVICES

FINFET BASED ZRAM WITH CONVEX CHANNEL REGION

RELIABLE GATE CONTACTS OVER ACTIVE AREAS

RELIABLE GATE CONTACTS OVER ACTIVE AREAS

PRESERVING CHANNEL STRAIN IN FIN CUTS

PRESERVING CHANNEL STRAIN IN FIN CUTS

SHALLOW TRENCH ISOLATION STRUCTURES AND CONTACT PATTERNING

SHALLOW TRENCH ISOLATION STRUCTURES AND CONTACT PATTERNING

STANDARD CELL ARCHITECTURE WITH AT LEAST ONE GATE CONTACT OVER AN A...

STANDARD CELL ARCHITECTURE WITH AT LEAST ONE GATE CONTACT OVER AN A...

PRESERVING CHANNEL STRAIN IN FIN CUTS

PARTIAL SPACER FOR INCREASING SELF ALIGNED CONTACT PROCESS MARGINS

STRUCTURE AND METHOD TO PREVENT EPI SHORT BETWEEN TRENCHES IN FINFE...

CONTACT FIRST REPLACEMENT METAL GATE

FORMING STRESSED EPITAXIAL LAYER USING DUMMY GATES

SEMICONDUCTOR FIN ISOLATION BY A WELL TRAPPING FIN PORTION