Raymond T. Lee

Person

Sunnyvale, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Minimizing transistor size in integrated circuits
- Patent number 7,026,691
- Issue date Apr 11, 2006
- Advanced Micro Devices, Inc.
- Craig S. Sander
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduced masking step CMOS transistor formation using removable amor...
- Patent number 6,479,350
- Issue date Nov 12, 2002
- Advanced Micro Devices, Inc.
- Zicheng Gary Ling
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Minimizing transistor size in integrated circuits
- Patent number 6,287,953
- Issue date Sep 11, 2001
- Advanced Micro Devices, Inc.
- Craig S. Sander
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Two step mask process to eliminate gate end cap shortening
- Patent number 6,287,904
- Issue date Sep 11, 2001
- Advanced Micro Devices, Inc.
- Raymond T. Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Aluminum disposable spacer to reduce mask count in CMOS transistor...
- Patent number 6,221,706
- Issue date Apr 24, 2001
- Advanced Micro Devices, Inc.
- Todd Lukanc
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride disposable spacer to reduce mask count in CMOS transistor f...
- Patent number 6,218,224
- Issue date Apr 17, 2001
- Advanced Micro Devices, Inc.
- Todd Lukanc
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Amorphous silicon disposable spacer to reduce mask count in CMOS tr...
- Patent number 6,214,655
- Issue date Apr 10, 2001
- Advanced Micro Devices, Inc.
- Raymond T. Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming minimal size spaces in integrated circuit conductive lines
- Patent number 6,191,034
- Issue date Feb 20, 2001
- Advanced Micro Devices
- Richard K. Klein
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of a barrier layer for tungsten damascene interconnects b...
- Patent number 6,166,428
- Issue date Dec 26, 2000
- Advanced Micro Devices, Inc.
- Sunil D. Mehta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Minimizing transistor size in integrated circuits
- Patent number 6,146,954
- Issue date Nov 14, 2000
- Advanced Micro Devices, Inc.
- Richard K. Klein
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multipurpose cap layer dielectric
- Patent number 6,114,235
- Issue date Sep 5, 2000
- Advanced Micro Devices, Inc.
- David K. Foote
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride disposable spacer to reduce mask count in CMOS transistor f...
- Patent number 6,103,563
- Issue date Aug 15, 2000
- Advanced Micro Devices, Inc.
- Todd Lukanc
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming local interconnects in integrated circuits
- Patent number 6,051,881
- Issue date Apr 18, 2000
- Advanced Micro Devices
- Richard K. Klein
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for self-aligning polysilicon gates with field isolation and...
- Patent number 6,046,088
- Issue date Apr 4, 2000
- Advanced Micro Devices, Inc.
- Richard K. Klein
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming minimal size spaces in integrated circuit conductive lines
- Patent number 5,930,659
- Issue date Jul 27, 1999
- Advanced MicroDevices, Inc.
- Richard K. Klein
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making static random access memory cell having a trench f...
- Patent number 5,879,980
- Issue date Mar 9, 1999
- Advanced Micro Devices, Inc.
- Asim A. Selcuk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell having increased capacitance via a local interconnect t...
- Patent number 5,844,836
- Issue date Dec 1, 1998
- Advanced Micro Devices, Inc.
- Nicholas John Kepler
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device using a reduced word line voltage during read operati...
- Patent number 5,796,651
- Issue date Aug 18, 1998
- Advanced Micro Devices, Inc.
- Stephen C. Horne
- G11 - INFORMATION STORAGE
Information Patent Grant
Landing pad technology doubled up as a local interconnect and borde...
- Patent number 5,674,781
- Issue date Oct 7, 1997
- Advanced Micro Devices, Inc.
- Richard J. Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Landing pad technology doubled up as local interconnect and borderl...
- Patent number 5,654,589
- Issue date Aug 5, 1997
- Advanced Micro Devices, Incorporated
- Richard J. Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for eliminating window mask process in the fabrication of a...
- Patent number 5,627,110
- Issue date May 6, 1997
- Advanced Micro Devices, Inc.
- Raymond T. Lee
- H01 - BASIC ELECTRIC ELEMENTS

Raymond T. Lee

Person

Patents Grantslast 30 patents

Minimizing transistor size in integrated circuits

Reduced masking step CMOS transistor formation using removable amor...

Minimizing transistor size in integrated circuits

Two step mask process to eliminate gate end cap shortening

Aluminum disposable spacer to reduce mask count in CMOS transistor...

Nitride disposable spacer to reduce mask count in CMOS transistor f...

Amorphous silicon disposable spacer to reduce mask count in CMOS tr...

Forming minimal size spaces in integrated circuit conductive lines

Formation of a barrier layer for tungsten damascene interconnects b...

Minimizing transistor size in integrated circuits

Multipurpose cap layer dielectric

Nitride disposable spacer to reduce mask count in CMOS transistor f...

Forming local interconnects in integrated circuits

Method for self-aligning polysilicon gates with field isolation and...

Forming minimal size spaces in integrated circuit conductive lines

Method of making static random access memory cell having a trench f...

Memory cell having increased capacitance via a local interconnect t...

Memory device using a reduced word line voltage during read operati...

Landing pad technology doubled up as a local interconnect and borde...

Landing pad technology doubled up as local interconnect and borderl...

Method for eliminating window mask process in the fabrication of a...