Rebecca PARK

Person

Menlo Park, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Fully aligned via integration with selective catalyzed vapor phase...
- Patent number 11,705,363
- Issue date Jul 18, 2023
- Samsung Electronics Co., Ltd.
- Ming He
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SYSTEMS AND METHODS OF APPLYING STRESS IN TRANSISTORS
- Publication number 20240429307
- Publication date Dec 26, 2024
- Samsung Electronics Co., Ltd.
- Rebecca Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH PERFORMANCE FETS
- Publication number 20240413232
- Publication date Dec 12, 2024
- Samsung Electronics Co., Ltd.
- Mehdi Saremi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR (FET) AND METHOD OF MANUFACTURING THE SAME
- Publication number 20240405128
- Publication date Dec 5, 2024
- Samsung Electronics Co., Ltd.
- Aravindh Kumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMMON OUTPUT IN 3D STACK FET
- Publication number 20240347537
- Publication date Oct 17, 2024
- Samsung Electronics Co., Ltd.
- Mehdi Saremi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D STACKED FIELD-EFFECT TRANSISTOR DEVICE WITH PN JUNCTION STRUCTURE
- Publication number 20240047539
- Publication date Feb 8, 2024
- Samsung Electronics Co., Ltd.
- Ming HE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3DSFET STANDARD CELL ARCHITECTURE WITH SOURCE-DRAIN JUNCTION ISOLATION
- Publication number 20240047456
- Publication date Feb 8, 2024
- Samsung Electronics Co., Ltd.
- Ming HE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FULLY ALIGNED VIA INTEGRATION WITH SELECTIVE CATALYZED VAPOR PHASE...
- Publication number 20230317513
- Publication date Oct 5, 2023
- Samsung Electronics Co., Ltd.
- Ming HE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSHEET TRANSISTOR DEVICES AND RELATED FABRICATION METHODS
- Publication number 20230178420
- Publication date Jun 8, 2023
- Samsung Electronics Co., Ltd.
- Ming He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING INTEGRATED CIRCUIT DEVICES INCLUDING STACKED TRA...
- Publication number 20230178440
- Publication date Jun 8, 2023
- Samsung Electronics Co., Ltd.
- MING HE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED TRANSISTORS HAVING AN ISOLATION REGION THEREBETWEEN AND A C...
- Publication number 20230086084
- Publication date Mar 23, 2023
- Samsung Electronics Co., Ltd.
- Seungchan Yun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FULLY ALIGNED VIA INTEGRATION WITH SELECTIVE CATALYZED VAPOR PHASE...
- Publication number 20220301924
- Publication date Sep 22, 2022
- Samsung Electronics Co., Ltd.
- Ming HE
- H01 - BASIC ELECTRIC ELEMENTS

Rebecca PARK

Person

Patents Grantslast 30 patents

Fully aligned via integration with selective catalyzed vapor phase...

Patents Applicationslast 30 patents

SYSTEMS AND METHODS OF APPLYING STRESS IN TRANSISTORS

HIGH PERFORMANCE FETS

FIELD EFFECT TRANSISTOR (FET) AND METHOD OF MANUFACTURING THE SAME

COMMON OUTPUT IN 3D STACK FET

3D STACKED FIELD-EFFECT TRANSISTOR DEVICE WITH PN JUNCTION STRUCTURE

3DSFET STANDARD CELL ARCHITECTURE WITH SOURCE-DRAIN JUNCTION ISOLATION

FULLY ALIGNED VIA INTEGRATION WITH SELECTIVE CATALYZED VAPOR PHASE...

NANOSHEET TRANSISTOR DEVICES AND RELATED FABRICATION METHODS

METHODS OF FORMING INTEGRATED CIRCUIT DEVICES INCLUDING STACKED TRA...

STACKED TRANSISTORS HAVING AN ISOLATION REGION THEREBETWEEN AND A C...

FULLY ALIGNED VIA INTEGRATION WITH SELECTIVE CATALYZED VAPOR PHASE...