Reet Chaudhuri

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Ithaca, NY, US

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Patents Grantslast 30 patents

Information Patent Grant
RF high-electron-mobility transistors including group III-N stress...
- Patent number 11,710,785
- Issue date Jul 25, 2023
- Cornell University
- Austin Hickman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-voltage p-channel FET based on III-nitride heterostructures
- Patent number 11,522,080
- Issue date Dec 6, 2022
- Cornell University
- Samuel James Bader
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Polarization-induced 2D hole gases for high-voltage p-channel trans...
- Patent number 11,158,709
- Issue date Oct 26, 2021
- Cornell University
- Reet Chaudhuri
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
INTEGRATED ELECTRONICS ON THE ALUMINUM NITRIDE PLATFORM
- Publication number 20220199782
- Publication date Jun 23, 2022
- Cornell University
- Austin Hickman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POLARIZATION-INDUCED 2D HOLE GASES FOR HIGH-VOLTAGE P-CHANNEL TRANS...
- Publication number 20210249513
- Publication date Aug 12, 2021
- Cornell University
- Reet Chaudhuri
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RF HIGH-ELECTRON-MOBILITY TRANSISTORS INCLUDING GROUP III-N STRESS...
- Publication number 20200388701
- Publication date Dec 10, 2020
- Comell University
- Austin Hickman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-VOLTAGE P-CHANNEL FET BASED ON III-NITRIDE HETEROSTRUCTURES
- Publication number 20200144407
- Publication date May 7, 2020
- Cornell University
- Samuel James Bader
- H01 - BASIC ELECTRIC ELEMENTS