Regan S. Tsui

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Boise, ID, US

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Patents Grantslast 30 patents

Information Patent Grant
Biasable isolation regions using epitaxially grown silicon between...
- Patent number 6,919,612
- Issue date Jul 19, 2005
- Micron Technology, Inc.
- Darwin A. Clampitt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming biasable isolation regions using epitaxially grow...
- Patent number 6,716,719
- Issue date Apr 6, 2004
- Micron Technology, Inc.
- Darwin A. Clampitt
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Method of forming biasable isolation regions using epitaxially grow...
- Publication number 20030224569
- Publication date Dec 4, 2003
- Darwin A. Clampitt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Biasable isolation regions using epitaxially grown silicon between...
- Publication number 20030224566
- Publication date Dec 4, 2003
- Darwin A. Clampitt
- H01 - BASIC ELECTRIC ELEMENTS