Reinhold Kuhnert

Person

Munich, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor module having high insulating power and high thermal...
- Patent number 5,786,633
- Issue date Jul 28, 1998
- Siemens Aktiengesellschaft
- Eckhard Wolfgang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor component with pressure contact
- Patent number 5,506,452
- Issue date Apr 9, 1996
- Siemens Aktiengesellschaft
- Reinhold Kuhnert
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor component and method for the manufacturing thereof
- Patent number 5,436,502
- Issue date Jul 25, 1995
- Siemens Aktiengesellschaft
- Reinhold Kuhnert
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a semiconductor modular structure
- Patent number 5,379,942
- Issue date Jan 10, 1995
- Siemens Aktiengesellschaft
- Reinhold Kuhnert
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Semiconductor component and method for the manufacture thereof
- Patent number 5,300,458
- Issue date Apr 5, 1994
- Siemens Aktiengesellschaft
- Reinhold Kuhnert
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for the manufacturing of a thyristor with defined lateral re...
- Patent number 5,204,273
- Issue date Apr 20, 1993
- Siemens Aktiengesellschaft
- Reinhold Kuhnert
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making thyristor having low reflection light-triggering s...
- Patent number 5,169,790
- Issue date Dec 8, 1992
- Siemens Aktiengesellschaft
- Peter Tuerkes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thyristor having a low-reflection light-triggering structure
- Patent number 5,083,177
- Issue date Jan 21, 1992
- Siemens Aktiengesellschaft
- Peter Tuerkes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thyristor with high positive and negative blocking capability and m...
- Patent number 5,077,224
- Issue date Dec 31, 1991
- Siemens Aktiengesellschaft
- Herbert Schwarzbauer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thyristor with high positive and negative blocking capability
- Patent number 5,072,312
- Issue date Dec 10, 1991
- Siemens Aktiengesellschaft
- Herbert Schwarzbauer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a p-doped semiconductor region in an n-conduct...
- Patent number 4,820,656
- Issue date Apr 11, 1989
- Siemens Aktiengesellschaft
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light-triggerable thyristor having low-loss feed of the trigger energy
- Patent number 4,757,366
- Issue date Jul 12, 1988
- Siemens Aktiengesellschaft
- Tibor Salanki
- G02 - OPTICS
Information Patent Grant
Method for the manufacture of a pn-junction having high dielectric...
- Patent number 4,757,031
- Issue date Jul 12, 1988
- Siemens Aktiengesellschaft
- Reinhold Kuhnert
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing regions having adjustable uniform doping i...
- Patent number 4,728,371
- Issue date Mar 1, 1988
- Siemens Aktiengesellschaft
- Ernst W. Haas
- C30 - CRYSTAL GROWTH

Reinhold Kuhnert

Person

Patents Grantslast 30 patents

Semiconductor module having high insulating power and high thermal...

Power semiconductor component with pressure contact

Semiconductor component and method for the manufacturing thereof

Method for producing a semiconductor modular structure

Semiconductor component and method for the manufacture thereof

Method for the manufacturing of a thyristor with defined lateral re...

Method of making thyristor having low reflection light-triggering s...

Thyristor having a low-reflection light-triggering structure

Thyristor with high positive and negative blocking capability and m...

Thyristor with high positive and negative blocking capability

Method for producing a p-doped semiconductor region in an n-conduct...

Light-triggerable thyristor having low-loss feed of the trigger energy

Method for the manufacture of a pn-junction having high dielectric...

Method for manufacturing regions having adjustable uniform doping i...