Remi COQUAND

Person

Les Marches, FR

People

Patents Grantslast 30 patents

Information Patent Grant
Creation of stress in the channel of a nanosheet transistor
- Patent number 11,575,003
- Issue date Feb 7, 2023
- International Business Machines Corporation
- Nicolas Loubet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor divice having a carbon containing insulation layer fo...
- Patent number 11,515,392
- Issue date Nov 29, 2022
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Shay Reboh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device including at least one nano-object
- Patent number 11,450,755
- Issue date Sep 20, 2022
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Shay Reboh
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Transistor with superposed bars and double-gate structure
- Patent number 11,177,371
- Issue date Nov 16, 2021
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Remi Coquand
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabrication of a semiconductor device including one or mo...
- Patent number 11,088,247
- Issue date Aug 10, 2021
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Shay Reboh
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method for making superimposed transistors
- Patent number 11,081,547
- Issue date Aug 3, 2021
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Shay Reboh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Creation of stress in the channel of a nanosheet transistor
- Patent number 11,049,933
- Issue date Jun 29, 2021
- International Business Machines Corporation
- Nicolas Loubet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor with reduced contact resistance
- Patent number 10,896,956
- Issue date Jan 19, 2021
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Remi Coquand
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method for fabricating a field-effect transistor
- Patent number 10,818,775
- Issue date Oct 27, 2020
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Shay Reboh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing at least one field effect transistor having...
- Patent number 10,727,320
- Issue date Jul 28, 2020
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Shay Reboh
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Optimizing junctions of gate all around structures with channel pul...
- Patent number 10,714,392
- Issue date Jul 14, 2020
- International Business Machines Corporation
- Nicolas Loubet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming doped extension regions in a structure having su...
- Patent number 10,553,723
- Issue date Feb 4, 2020
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Remi Coquand
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making a semiconductor device with a compressive stresse...
- Patent number 10,431,683
- Issue date Oct 1, 2019
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Shay Reboh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a semiconductor device with self-aligned inter...
- Patent number 10,269,930
- Issue date Apr 23, 2019
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Shay Reboh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a FET transistor having a strained channel
- Patent number 10,263,077
- Issue date Apr 16, 2019
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Shay Reboh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a field effect transistor having a surroundi...
- Patent number 10,256,102
- Issue date Apr 9, 2019
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Remi Coquand
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making a semiconductor device with nanowire and aligned...
- Patent number 10,217,849
- Issue date Feb 26, 2019
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Sylvain Barraud
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making a semiconductor device with self-aligned inner sp...
- Patent number 10,217,842
- Issue date Feb 26, 2019
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Shay Reboh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for fabricating a field effect transistor having a coating...
- Patent number 10,147,788
- Issue date Dec 4, 2018
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Emmanuel Augendre
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing a channel structure formed from a plurality of...
- Patent number 10,141,424
- Issue date Nov 27, 2018
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Remi Coquand
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a transistor having a vertical channel havin...
- Patent number 10,134,875
- Issue date Nov 20, 2018
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Shay Reboh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for fabricating a field effect transistor having a coating...
- Patent number 10,109,735
- Issue date Oct 23, 2018
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Remi Coquand
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for fabricating a vertical-channel nanolayer transistor
- Patent number 10,096,694
- Issue date Oct 9, 2018
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Remi Coquand
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR MAKING SUPERIMPOSED TRANSISTORS
- Publication number 20210328014
- Publication date Oct 21, 2021
- COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- Shay Reboh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CREATION OF STRESS IN THE CHANNEL OF A NANOSHEET TRANSISTOR
- Publication number 20210257450
- Publication date Aug 19, 2021
- International Business Machines Corporation
- Nicolas Loubet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CREATION OF STRESS IN THE CHANNEL OF A NANOSHEET TRANSISTOR
- Publication number 20210020743
- Publication date Jan 21, 2021
- International Business Machines Corporation
- Nicolas Loubet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC DEVICE INCLUDING AT LEAST ONE NANO-OBJECT
- Publication number 20200321452
- Publication date Oct 8, 2020
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Shay REBOH
- B82 - NANO-TECHNOLOGY
Information Patent Application
METHOD OF FABRICATION OF A SEMICONDUCTOR DEVICE INCLUDING ONE OR MO...
- Publication number 20200212179
- Publication date Jul 2, 2020
- Commissariat A L'Energle A.tomique et aux Energies Alternatives
- Shay REBOH
- B82 - NANO-TECHNOLOGY
Information Patent Application
STRUCTURE WITH SUPERIMPOSED SEMICONDUCTOR BARS HAVING A UNIFORM SEM...
- Publication number 20200111872
- Publication date Apr 9, 2020
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Shay REBOH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MAKING SUPERIMPOSED TRANSISTORS
- Publication number 20200098859
- Publication date Mar 26, 2020
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Shay Reboh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH SUPERPOSED BARS AND DOUBLE-GATE STRUCTURE
- Publication number 20200058768
- Publication date Feb 20, 2020
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Remi COQUAND
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Optimizing Junctions of Gate All Around Structures with Channel Pul...
- Publication number 20200027791
- Publication date Jan 23, 2020
- International Business Machines Corporation
- Nicolas Loubet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING OF AT LEAST A FIELD-EFFECT TRANSISTOR
- Publication number 20190207016
- Publication date Jul 4, 2019
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Shay Reboh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATION OF A SEMICONDUCTOR DEVICE INCLUDING ONE OR MO...
- Publication number 20190198614
- Publication date Jun 27, 2019
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Shay REBOH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR WITH REDUCED CONTACT RESISTANCE
- Publication number 20190198616
- Publication date Jun 27, 2019
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Remi COQUAND
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING A FIELD-EFFECT TRANSISTOR
- Publication number 20190157422
- Publication date May 23, 2019
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Shay REBOH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING DOPED EXTENSION REGIONS IN A STRUCTURE HAVING SU...
- Publication number 20190051744
- Publication date Feb 14, 2019
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Remi Coquand
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING A FIELD EFFECT TRANSISTOR HAVING A SURROUNDI...
- Publication number 20180301341
- Publication date Oct 18, 2018
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Remi COQUAND
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING A TRANSISTOR HAVING A VERTICAL CHANNEL HAVIN...
- Publication number 20180204931
- Publication date Jul 19, 2018
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Shay REBOH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESS FOR FABRICATING A FIELD EFFECT TRANSISTOR HAVING A COATING...
- Publication number 20180182893
- Publication date Jun 28, 2018
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Remi COQUAND
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MAKING A SEMICONDUCTOR DEVICE WITH SELF-ALIGNED INNER SP...
- Publication number 20180175167
- Publication date Jun 21, 2018
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Shay Reboh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MAKING A SEMICONDUCTOR DEVICE WITH A COMPRESSIVE STRESSE...
- Publication number 20180175194
- Publication date Jun 21, 2018
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Shay Reboh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE WITH SELF-ALIGNED INTER...
- Publication number 20180175166
- Publication date Jun 21, 2018
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Shay Reboh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MAKING A SEMICONDUCTOR DEVICE WITH NANOWIRE AND ALIGNED...
- Publication number 20180175163
- Publication date Jun 21, 2018
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Sylvain BARRAUD
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESS FOR FABRICATING A FIELD EFFECT TRANSISTOR HAVING A COATING...
- Publication number 20180108733
- Publication date Apr 19, 2018
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Emmanuel AUGENDRE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF PRODUCING A CHANNEL STRUCTURE FORMED FROM A PLURALITY OF...
- Publication number 20170345915
- Publication date Nov 30, 2017
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Remi COQUAND
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING A TRANSISTOR WITH NANO-LAYERS HAVING A VERTIC...
- Publication number 20170330958
- Publication date Nov 16, 2017
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Remi COQUAND
- H01 - BASIC ELECTRIC ELEMENTS

Remi COQUAND

Person

Patents Grantslast 30 patents

Creation of stress in the channel of a nanosheet transistor

Semiconductor divice having a carbon containing insulation layer fo...

Electronic device including at least one nano-object

Transistor with superposed bars and double-gate structure

Method of fabrication of a semiconductor device including one or mo...

Method for making superimposed transistors

Creation of stress in the channel of a nanosheet transistor

Field effect transistor with reduced contact resistance

Method for fabricating a field-effect transistor

Method of manufacturing at least one field effect transistor having...

Optimizing junctions of gate all around structures with channel pul...

Method for forming doped extension regions in a structure having su...

Method for making a semiconductor device with a compressive stresse...

Method for producing a semiconductor device with self-aligned inter...

Method of fabricating a FET transistor having a strained channel

Method for fabricating a field effect transistor having a surroundi...

Method for making a semiconductor device with nanowire and aligned...

Method for making a semiconductor device with self-aligned inner sp...

Process for fabricating a field effect transistor having a coating...

Method of producing a channel structure formed from a plurality of...

Method for fabricating a transistor having a vertical channel havin...

Process for fabricating a field effect transistor having a coating...

Process for fabricating a vertical-channel nanolayer transistor

Patents Applicationslast 30 patents

METHOD FOR MAKING SUPERIMPOSED TRANSISTORS

CREATION OF STRESS IN THE CHANNEL OF A NANOSHEET TRANSISTOR

CREATION OF STRESS IN THE CHANNEL OF A NANOSHEET TRANSISTOR

ELECTRONIC DEVICE INCLUDING AT LEAST ONE NANO-OBJECT

METHOD OF FABRICATION OF A SEMICONDUCTOR DEVICE INCLUDING ONE OR MO...

STRUCTURE WITH SUPERIMPOSED SEMICONDUCTOR BARS HAVING A UNIFORM SEM...

METHOD FOR MAKING SUPERIMPOSED TRANSISTORS

TRANSISTOR WITH SUPERPOSED BARS AND DOUBLE-GATE STRUCTURE

Optimizing Junctions of Gate All Around Structures with Channel Pul...

METHOD FOR FABRICATING OF AT LEAST A FIELD-EFFECT TRANSISTOR

METHOD OF FABRICATION OF A SEMICONDUCTOR DEVICE INCLUDING ONE OR MO...

FIELD EFFECT TRANSISTOR WITH REDUCED CONTACT RESISTANCE

METHOD FOR FABRICATING A FIELD-EFFECT TRANSISTOR

METHOD FOR FORMING DOPED EXTENSION REGIONS IN A STRUCTURE HAVING SU...

METHOD FOR FABRICATING A FIELD EFFECT TRANSISTOR HAVING A SURROUNDI...

METHOD FOR FABRICATING A TRANSISTOR HAVING A VERTICAL CHANNEL HAVIN...

PROCESS FOR FABRICATING A FIELD EFFECT TRANSISTOR HAVING A COATING...

METHOD FOR MAKING A SEMICONDUCTOR DEVICE WITH SELF-ALIGNED INNER SP...

METHOD FOR MAKING A SEMICONDUCTOR DEVICE WITH A COMPRESSIVE STRESSE...

METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE WITH SELF-ALIGNED INTER...

METHOD FOR MAKING A SEMICONDUCTOR DEVICE WITH NANOWIRE AND ALIGNED...

PROCESS FOR FABRICATING A FIELD EFFECT TRANSISTOR HAVING A COATING...

METHOD OF PRODUCING A CHANNEL STRUCTURE FORMED FROM A PLURALITY OF...

METHOD OF FABRICATING A TRANSISTOR WITH NANO-LAYERS HAVING A VERTIC...