Reza Arghavani

Person

Scotts Valley, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor devices including cobalt alloys and fabrication metho...
- Patent number 11,380,619
- Issue date Jul 5, 2022
- Tohoku University
- Junichi Koike
- G11 - INFORMATION STORAGE
Information Patent Grant
Capped ALD films for doping fin-shaped channel regions of 3-D IC tr...
- Patent number 11,011,379
- Issue date May 18, 2021
- Lam Research Corporation
- Reza Arghavani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices including a first cobalt alloy in a first bar...
- Patent number 10,796,995
- Issue date Oct 6, 2020
- Tohoku University
- Junichi Koike
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective self-aligned patterning of silicon germanium, germanium a...
- Patent number 10,741,405
- Issue date Aug 11, 2020
- Lam Research Corporation
- Daniel Peter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Capped ALD films for doping fin-shaped channel regions of 3-D IC tr...
- Patent number 10,559,468
- Issue date Feb 11, 2020
- Lam Research Corporation
- Reza Arghavani
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Rare earth metal surface-activated plasma doping on semiconductor s...
- Patent number 10,068,981
- Issue date Sep 4, 2018
- Lam Research Corporation
- Yunsang Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective self-aligned patterning of silicon germanium, germanium a...
- Patent number 10,043,672
- Issue date Aug 7, 2018
- Lam Research Corporation
- Daniel Peter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Capped ALD films for doping fin-shaped channel regions of 3-D IC tr...
- Patent number 9,997,357
- Issue date Jun 12, 2018
- Lam Research Corporation
- Reza Arghavani
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Transistor with threshold voltage set notch and method of fabricati...
- Patent number 9,922,977
- Issue date Mar 20, 2018
- Mie Fujitsu Semiconductor Limited
- Reza Arghavani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to tune TiOx stoichiometry using atomic layer deposited Ti f...
- Patent number 9,478,411
- Issue date Oct 25, 2016
- Lam Research Corporation
- Shruti Vivek Thombare
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Transistor with threshold voltage set notch and method of fabricati...
- Patent number 9,418,987
- Issue date Aug 16, 2016
- Mie Fujitsu Semiconductor Limited
- Reza Arghavani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated etch/clean for dielectric etch applications
- Patent number 9,396,961
- Issue date Jul 19, 2016
- Lam Research Corporation
- Reza Arghavani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CVD based metal/semiconductor OHMIC contact for high volume manufac...
- Patent number 9,153,486
- Issue date Oct 6, 2015
- Lam Research Corporation
- Reza Arghavani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with threshold voltage set notch and method of fabricati...
- Patent number 8,759,872
- Issue date Jun 24, 2014
- SuVolta, Inc.
- Reza Arghavani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming flash memory with ultraviolet treatment
- Patent number 8,501,568
- Issue date Aug 6, 2013
- Applied Materials, Inc.
- Mihaela Balseanu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a non-volatile memory having a silicon nitride ch...
- Patent number 8,252,653
- Issue date Aug 28, 2012
- Applied Materials, Inc.
- Mihaela Balseanu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Oxide etch with NH4-NF3 chemistry
- Patent number 7,955,510
- Issue date Jun 7, 2011
- Applied Materials, Inc.
- Reza Arghavani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low temperature conformal oxide formation and applications
- Patent number 7,851,385
- Issue date Dec 14, 2010
- Applied Materials, Inc.
- Matthew Spuller
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of forming non-volatile memory having charge trap layer with...
- Patent number 7,816,205
- Issue date Oct 19, 2010
- Applied Materials, Inc.
- Mihaela Balseanu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell having stressed layers
- Patent number 7,678,662
- Issue date Mar 16, 2010
- Applied Materials, Inc.
- Reza Arghavani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitrous oxide anneal of TEOS/ozone CVD for improved gapfill
- Patent number 7,674,727
- Issue date Mar 9, 2010
- Applied Materials, Inc.
- Zheng Yuan
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Substrate having silicon germanium material and stressed silicon ni...
- Patent number 7,563,680
- Issue date Jul 21, 2009
- Applied Materials, Inc.
- Reza Arghavani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of inducing stresses in the channel region of a transistor
- Patent number 7,528,051
- Issue date May 5, 2009
- Applied Materials, Inc.
- Reza Arghavani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Substrate having silicon germanium material and stressed silicon ni...
- Patent number 7,323,391
- Issue date Jan 29, 2008
- Applied Materials, Inc.
- Reza Arghavani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing gate stack sidewall spacers
- Patent number 7,253,123
- Issue date Aug 7, 2007
- Applied Materials, Inc.
- Reza Arghavani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitrous oxide anneal of TEOS/ozone CVD for improved gapfill
- Patent number 7,141,483
- Issue date Nov 28, 2006
- Applied Materials, Inc.
- Zheng Yuan
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Low-thermal-budget gapfill process
- Patent number 7,087,497
- Issue date Aug 8, 2006
- Applied Materials
- Zheng Yuan
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for forming a low thermal budget spacer
- Patent number 7,049,200
- Issue date May 23, 2006
- Applied Materials Inc.
- Reza Arghavani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Post treatment of low k dielectric films
- Patent number 7,018,941
- Issue date Mar 28, 2006
- Applied Materials, Inc.
- Zhenjiang Cui
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICES INCLUDING COBALT ALLOYS AND FABRICATION METHO...
- Publication number 20200365192
- Publication date Nov 19, 2020
- TOHOKU UNIVERSITY
- Junichi KOIKE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAPPED ALD FILMS FOR DOPING FIN-SHAPED CHANNEL REGIONS OF 3-D IC TR...
- Publication number 20190385850
- Publication date Dec 19, 2019
- LAM RESEARCH CORPORATION
- Reza Arghavani
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SEMICONDUCTOR DEVICES INCLUDING COBALT ALLOYS AND FABRICATION METHO...
- Publication number 20190164896
- Publication date May 30, 2019
- TOHOKU UNIVERSITY
- Junichi KOIKE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE SELF-ALIGNED PATTERNING OF SILICON GERMANIUM, GERMANIUM A...
- Publication number 20180342399
- Publication date Nov 29, 2018
- LAM RESEARCH CORPORATION
- Daniel Peter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAPPED ALD FILMS FOR DOPING FIN-SHAPED CHANNEL REGIONS OF 3-D IC TR...
- Publication number 20180269061
- Publication date Sep 20, 2018
- LAM RESEARCH CORPORATION
- Reza Arghavani
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SELECTIVE SELF-ALIGNED PATTERNING OF SILICON GERMANIUM, GERMANIUM A...
- Publication number 20170287724
- Publication date Oct 5, 2017
- LAM RESEARCH CORPORATION
- Daniel Peter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RARE EARTH METAL SURFACE-ACTIVATED PLASMA DOPING ON SEMICONDUCTOR S...
- Publication number 20170256622
- Publication date Sep 7, 2017
- LAM RESEARCH CORPORATION
- Yunsang Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAPPED ALD FILMS FOR DOPING FIN-SHAPED CHANNEL REGIONS OF 3-D IC TR...
- Publication number 20160379826
- Publication date Dec 29, 2016
- LAM RESEARCH CORPORATION
- Reza Arghavani
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Transistor with Threshold Voltage Set Notch and Method of Fabricati...
- Publication number 20160336318
- Publication date Nov 17, 2016
- MIE Fujitsu Semiconductor Limited
- Reza Arghavani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED ETCH/CLEAN FOR DIELECTRIC ETCH APPLICATIONS
- Publication number 20160181117
- Publication date Jun 23, 2016
- LAM RESEARCH CORPORATION
- Reza Arghavani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO TUNE TIOX STOICHIOMETRY USING ATOMIC LAYER DEPOSITED TI F...
- Publication number 20160056037
- Publication date Feb 25, 2016
- LAM RESEARCH CORPORATION
- Shruti Vivek Thombare
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
CAPPED ALD FILMS FOR DOPING FIN-SHAPED CHANNEL REGIONS OF 3-D IC TR...
- Publication number 20150249013
- Publication date Sep 3, 2015
- LAM RESEARCH CORPORATION
- Reza Arghavani
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
CVD BASED METAL/SEMICONDUCTOR OHMIC CONTACT FOR HIGH VOLUME MANUFAC...
- Publication number 20140308812
- Publication date Oct 16, 2014
- Reza Arghavani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH THRESHOLD VOLTAGE SET NOTCH AND METHOD OF FABRICATI...
- Publication number 20140284722
- Publication date Sep 25, 2014
- Reza Arghavani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Mixing Energized and Non-Energized Gases for Silicon Nitride Deposi...
- Publication number 20120009803
- Publication date Jan 12, 2012
- Applied Materials, Inc.
- Kee Bum Jung
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
TRANSISTOR WITH THRESHOLD VOLTAGE SET NOTCH AND METHOD OF FABRICATI...
- Publication number 20110309447
- Publication date Dec 22, 2011
- Reza Arghavani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATION OF A SEMICONDUCTOR DEVICE AND STRUCTURE
- Publication number 20110031997
- Publication date Feb 10, 2011
- NuPGA Corporation
- Zvi Or-Bach
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
NON-VOLATILE MEMORY HAVING SILICON NITRIDE CHARGE TRAP LAYER
- Publication number 20100096687
- Publication date Apr 22, 2010
- APPLIED MATERIALS, INC.
- Mihaela BALSEANU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-VOLATILE MEMORY HAVING CHARGE TRAP LAYER WITH COMPOSITIONAL GRA...
- Publication number 20100096688
- Publication date Apr 22, 2010
- APPLIED MATERIALS, INC.
- Mihaela BALSEANU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FLASH MEMORY WITH TREATED CHARGE TRAP LAYER
- Publication number 20100099247
- Publication date Apr 22, 2010
- Applied Materials Inc.
- Mihaela Balseanu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OXIDE ETCH WITH NH4-NF3 CHEMISTRY
- Publication number 20100093151
- Publication date Apr 15, 2010
- Reza Arghavani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
APPARATUS AND METHOD FOR REACTION OF MATERIALS USING ELECTROMAGNETI...
- Publication number 20090295509
- Publication date Dec 3, 2009
- Universal Phase, Inc.
- Neel S. Master
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW TEMPERATURE CONFORMAL OXIDE FORMATION AND APPLICATIONS
- Publication number 20090087977
- Publication date Apr 2, 2009
- APPLIED MATERIALS, INC.
- MATTHEW SPULLER
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
UV CURING OF PECVD-DEPOSITED SACRIFICIAL POLYMER FILMS FOR AIR-GAP ILD
- Publication number 20080182403
- Publication date Jul 31, 2008
- ATIF NOORI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Substrate Having Silicon Germanium Material and Stressed Silicon Ni...
- Publication number 20080096356
- Publication date Apr 24, 2008
- Reza Arghavani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Metal layer inducing strain in silicon
- Publication number 20080061285
- Publication date Mar 13, 2008
- APPLIED MATERIALS, INC.
- Reza Arghavani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low-k spacer integration into CMOS transistors
- Publication number 20070202640
- Publication date Aug 30, 2007
- Applied Materials, Inc.
- Amir Al-Bayati
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELL HAVING STRESSED LAYERS
- Publication number 20070132054
- Publication date Jun 14, 2007
- Applied Materials
- Reza Arghavani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OXIDE ETCH WITH NH4-NF3 CHEMISTRY
- Publication number 20070123051
- Publication date May 31, 2007
- Reza Arghavani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITROUS OXIDE ANNEAL OF TEOS/OZONE CVD FOR IMPROVED GAPFILL
- Publication number 20070059896
- Publication date Mar 15, 2007
- Applied Materials, Inc.
- Zheng Yuan
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Reza Arghavani

Person

Patents Grantslast 30 patents

Semiconductor devices including cobalt alloys and fabrication metho...

Capped ALD films for doping fin-shaped channel regions of 3-D IC tr...

Semiconductor devices including a first cobalt alloy in a first bar...

Selective self-aligned patterning of silicon germanium, germanium a...

Capped ALD films for doping fin-shaped channel regions of 3-D IC tr...

Rare earth metal surface-activated plasma doping on semiconductor s...

Selective self-aligned patterning of silicon germanium, germanium a...

Capped ALD films for doping fin-shaped channel regions of 3-D IC tr...

Transistor with threshold voltage set notch and method of fabricati...

Method to tune TiOx stoichiometry using atomic layer deposited Ti f...

Transistor with threshold voltage set notch and method of fabricati...

Integrated etch/clean for dielectric etch applications

CVD based metal/semiconductor OHMIC contact for high volume manufac...

Transistor with threshold voltage set notch and method of fabricati...

Method of forming flash memory with ultraviolet treatment

Method of forming a non-volatile memory having a silicon nitride ch...

Oxide etch with NH4-NF3 chemistry

Low temperature conformal oxide formation and applications

Method of forming non-volatile memory having charge trap layer with...

Memory cell having stressed layers

Nitrous oxide anneal of TEOS/ozone CVD for improved gapfill

Substrate having silicon germanium material and stressed silicon ni...

Method of inducing stresses in the channel region of a transistor

Substrate having silicon germanium material and stressed silicon ni...

Method for producing gate stack sidewall spacers

Nitrous oxide anneal of TEOS/ozone CVD for improved gapfill

Low-thermal-budget gapfill process

Method for forming a low thermal budget spacer

Post treatment of low k dielectric films

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICES INCLUDING COBALT ALLOYS AND FABRICATION METHO...

CAPPED ALD FILMS FOR DOPING FIN-SHAPED CHANNEL REGIONS OF 3-D IC TR...

SEMICONDUCTOR DEVICES INCLUDING COBALT ALLOYS AND FABRICATION METHO...

SELECTIVE SELF-ALIGNED PATTERNING OF SILICON GERMANIUM, GERMANIUM A...

CAPPED ALD FILMS FOR DOPING FIN-SHAPED CHANNEL REGIONS OF 3-D IC TR...

SELECTIVE SELF-ALIGNED PATTERNING OF SILICON GERMANIUM, GERMANIUM A...

RARE EARTH METAL SURFACE-ACTIVATED PLASMA DOPING ON SEMICONDUCTOR S...

CAPPED ALD FILMS FOR DOPING FIN-SHAPED CHANNEL REGIONS OF 3-D IC TR...

Transistor with Threshold Voltage Set Notch and Method of Fabricati...

INTEGRATED ETCH/CLEAN FOR DIELECTRIC ETCH APPLICATIONS

METHOD TO TUNE TIOX STOICHIOMETRY USING ATOMIC LAYER DEPOSITED TI F...

CAPPED ALD FILMS FOR DOPING FIN-SHAPED CHANNEL REGIONS OF 3-D IC TR...

CVD BASED METAL/SEMICONDUCTOR OHMIC CONTACT FOR HIGH VOLUME MANUFAC...

TRANSISTOR WITH THRESHOLD VOLTAGE SET NOTCH AND METHOD OF FABRICATI...

Mixing Energized and Non-Energized Gases for Silicon Nitride Deposi...

TRANSISTOR WITH THRESHOLD VOLTAGE SET NOTCH AND METHOD OF FABRICATI...

METHOD FOR FABRICATION OF A SEMICONDUCTOR DEVICE AND STRUCTURE

NON-VOLATILE MEMORY HAVING SILICON NITRIDE CHARGE TRAP LAYER

NON-VOLATILE MEMORY HAVING CHARGE TRAP LAYER WITH COMPOSITIONAL GRA...

FLASH MEMORY WITH TREATED CHARGE TRAP LAYER

OXIDE ETCH WITH NH4-NF3 CHEMISTRY

APPARATUS AND METHOD FOR REACTION OF MATERIALS USING ELECTROMAGNETI...

LOW TEMPERATURE CONFORMAL OXIDE FORMATION AND APPLICATIONS

UV CURING OF PECVD-DEPOSITED SACRIFICIAL POLYMER FILMS FOR AIR-GAP ILD

Substrate Having Silicon Germanium Material and Stressed Silicon Ni...

Metal layer inducing strain in silicon

Low-k spacer integration into CMOS transistors

MEMORY CELL HAVING STRESSED LAYERS

OXIDE ETCH WITH NH4-NF3 CHEMISTRY

NITROUS OXIDE ANNEAL OF TEOS/OZONE CVD FOR IMPROVED GAPFILL