Richard Frederick Rutz

Person

Cold Spring, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Group III-V semiconductor electrical contact
- Patent number 4,757,369
- Issue date Jul 12, 1988
- International Business Machines Corporation
- Thomas N. Jackson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon cap for annealing gallium arsenide
- Patent number 4,615,766
- Issue date Oct 7, 1986
- International Business Machines Corporation
- Thomas N. Jackson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure containing epitaxial crystals on a substrate
- Patent number 4,489,128
- Issue date Dec 18, 1984
- International Business Machines Corporation
- Richard F. Rutz
- C30 - CRYSTAL GROWTH
Information Patent Grant
Epitaxial crystal fabrication of SiC:AlN
- Patent number 4,382,837
- Issue date May 10, 1983
- International Business Machines Corporation
- Richard F. Rutz
- C30 - CRYSTAL GROWTH
Information Patent Grant
Refractory oxide fabrication
- Patent number 4,357,202
- Issue date Nov 2, 1982
- International Business Machines Corporation
- Richard F. Rutz
- C04 - CEMENTS CONCRETE ARTIFICIAL STONE CERAMICS REFRACTORIES
Information Patent Grant
Process for producing electronic grade aluminum nitride films utili...
- Patent number 4,152,182
- Issue date May 1, 1979
- International Business Machines Corporation
- Richard F. Rutz
- C30 - CRYSTAL GROWTH
Information Patent Grant
Fabrication of an epitaxial layer diode in aluminum nitride on sapp...
- Patent number 4,095,331
- Issue date Jun 20, 1978
- The United States of America as represented by the Secretary of the Air Force
- Richard Frederick Rutz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
AlN masking for selective etching of sapphire
- Patent number 4,008,111
- Issue date Feb 15, 1977
- International Business Machines Corporation
- Richard Frederick Rutz
- C04 - CEMENTS CONCRETE ARTIFICIAL STONE CERAMICS REFRACTORIES

Richard Frederick Rutz

Person

Patents Grantslast 30 patents

Group III-V semiconductor electrical contact

Silicon cap for annealing gallium arsenide

Structure containing epitaxial crystals on a substrate

Epitaxial crystal fabrication of SiC:AlN

Refractory oxide fabrication

Process for producing electronic grade aluminum nitride films utili...

Fabrication of an epitaxial layer diode in aluminum nitride on sapp...

AlN masking for selective etching of sapphire