Richard G. Southwick III

Person

Halfmoon, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Vertical field effect transistor and method of manufacturing a vert...
- Patent number 11,201,241
- Issue date Dec 14, 2021
- International Business Machines Corporation
- Choonghyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Measurement of top contact resistance in vertical field-effect tran...
- Patent number 11,024,738
- Issue date Jun 1, 2021
- International Business Machines Corporation
- Zuoguang Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual channel silicon/silicon germanium complementary metal oxide se...
- Patent number 10,790,199
- Issue date Sep 29, 2020
- ELPIS TECHNOLOGIES INC.
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Simplified gate stack process to improve dual channel CMOS performance
- Patent number 10,395,079
- Issue date Aug 27, 2019
- International Business Machines Corporation
- Hemanth Jagannathan
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Simplified gate stack process to improve dual channel CMOS performance
- Patent number 10,395,080
- Issue date Aug 27, 2019
- International Business Machines Corporation
- Hemanth Jagannathan
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Dual channel silicon/silicon germanium complementary metal oxide se...
- Patent number 10,361,130
- Issue date Jul 23, 2019
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Simplified gate stack process to improve dual channel CMOS performance
- Patent number 9,984,263
- Issue date May 29, 2018
- International Business Machines Corporation
- Hemanth Jagannathan
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Simplified gate stack process to improve dual channel CMOS performance
- Patent number 9,741,822
- Issue date Aug 22, 2017
- International Business Machines Corporation
- Hemanth Jagannathan
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
VERTICAL FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING A VERT...
- Publication number 20210210634
- Publication date Jul 8, 2021
- International Business Machines Corporation
- Choonghyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEASUREMENT OF TOP CONTACT RESISTANCE IN VERTICAL FIELD-EFFECT TRAN...
- Publication number 20200295175
- Publication date Sep 17, 2020
- International Business Machines Corporation
- Zuoguang Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL CHANNEL SILICON/SILICON GERMANIUM COMPLEMENTARY METAL OXIDE SE...
- Publication number 20190229020
- Publication date Jul 25, 2019
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL CHANNEL SILICON/SILICON GERMANIUM COMPLEMENTARY METAL OXIDE SE...
- Publication number 20180315663
- Publication date Nov 1, 2018
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIMPLIFIED GATE STACK PROCESS TO IMPROVE DUAL CHANNEL CMOS PERFORMANCE
- Publication number 20180247096
- Publication date Aug 30, 2018
- International Business Machines Corporation
- Hemanth Jagannathan
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SIMPLIFIED GATE STACK PROCESS TO IMPROVE DUAL CHANNEL CMOS PERFORMANCE
- Publication number 20180247097
- Publication date Aug 30, 2018
- International Business Machines Corporation
- Hemanth Jagannathan
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SIMPLIFIED GATE STACK PROCESS TO IMPROVE DUAL CHANNEL CMOS PERFORMANCE
- Publication number 20180089479
- Publication date Mar 29, 2018
- International Business Machines Corporation
- Hemanth Jagannathan
- G06 - COMPUTING CALCULATING COUNTING

Richard G. Southwick III

Person

Patents Grantslast 30 patents

Vertical field effect transistor and method of manufacturing a vert...

Measurement of top contact resistance in vertical field-effect tran...

Dual channel silicon/silicon germanium complementary metal oxide se...

Simplified gate stack process to improve dual channel CMOS performance

Simplified gate stack process to improve dual channel CMOS performance

Dual channel silicon/silicon germanium complementary metal oxide se...

Simplified gate stack process to improve dual channel CMOS performance

Simplified gate stack process to improve dual channel CMOS performance

Patents Applicationslast 30 patents

VERTICAL FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING A VERT...

MEASUREMENT OF TOP CONTACT RESISTANCE IN VERTICAL FIELD-EFFECT TRAN...

DUAL CHANNEL SILICON/SILICON GERMANIUM COMPLEMENTARY METAL OXIDE SE...

DUAL CHANNEL SILICON/SILICON GERMANIUM COMPLEMENTARY METAL OXIDE SE...

SIMPLIFIED GATE STACK PROCESS TO IMPROVE DUAL CHANNEL CMOS PERFORMANCE

SIMPLIFIED GATE STACK PROCESS TO IMPROVE DUAL CHANNEL CMOS PERFORMANCE

SIMPLIFIED GATE STACK PROCESS TO IMPROVE DUAL CHANNEL CMOS PERFORMANCE