Richard J. Carter

Person

Saratoga Springs, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Differential SG/EG spacer integration with equivalent NFET/PFET spa...
- Patent number 11,217,678
- Issue date Jan 4, 2022
- GLOBALFOUNDRIES U.S. Inc.
- George Robert Mulfinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Differential SG/EG spacer integration with equivalent NFET/PFET spa...
- Patent number 10,522,655
- Issue date Dec 31, 2019
- GLOBALFOUNDRIES Inc.
- George Robert Mulfinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FDSOI semiconductor device with contact enhancement layer and metho...
- Patent number 10,347,543
- Issue date Jul 9, 2019
- GLOBALFOUNDRIES Inc.
- Peter Baars
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Differential SG/EG spacer integration with equivalent NFET/PFET spa...
- Patent number 9,806,170
- Issue date Oct 31, 2017
- GLOBALFOUNDRIES Inc.
- George Robert Mulfinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuits with varying gate structures and fabrication me...
- Patent number 9,576,952
- Issue date Feb 21, 2017
- GLOBALFOUNDRIES Inc.
- Manoj Joshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication methods facilitating integration of different device ar...
- Patent number 9,570,586
- Issue date Feb 14, 2017
- GLOBALFOUNDRIES Inc.
- Hong Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial block layer for a fin field effect transistor device
- Patent number 9,508,850
- Issue date Nov 29, 2016
- GLOBALFOUNDRIES Inc.
- Zhenyu Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration method for fabrication of metal gate based multiple thr...
- Patent number 9,455,201
- Issue date Sep 27, 2016
- GLOBALFOUNDRIES Inc.
- Manoj Joshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of removing fins so as to form isolation structures on prod...
- Patent number 9,455,198
- Issue date Sep 27, 2016
- GLOBALFOUNDRIES Inc.
- Hong Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit having multiple threshold voltages
- Patent number 9,362,180
- Issue date Jun 7, 2016
- GLOBALFOUNDRIES Inc.
- Bongki Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Uniform exposed raised structures for non-planar semiconductor devices
- Patent number 9,362,176
- Issue date Jun 7, 2016
- GLOBALFOUNDRIES Inc.
- Hong Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for preventing oxidation damage during FinFET fabrication
- Patent number 9,324,841
- Issue date Apr 26, 2016
- GLOBALFOUNDRIES Inc.
- Hong Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial block layer for a fin field effect transistor device
- Patent number 9,293,586
- Issue date Mar 22, 2016
- GLOBALFOUNDRIES Inc.
- Zhenyu Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Preventing EPI damage for cap nitride strip scheme in a Fin-shaped...
- Patent number 9,236,312
- Issue date Jan 12, 2016
- GLOBALFOUNDRIES Inc.
- Hong Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Overlay performance for a fin field effect transistor device
- Patent number 9,219,002
- Issue date Dec 22, 2015
- GLOBALFOUNDRIES Inc.
- Zhenyu Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Devices and methods of forming fins at tight fin pitches
- Patent number 9,105,478
- Issue date Aug 11, 2015
- GLOBALFOUNDRIES Inc.
- Andy Wei
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Modified, etch-resistant gate structure(s) facilitating circuit fab...
- Patent number 9,093,561
- Issue date Jul 28, 2015
- GLOBALFOUNDRIES, INC.
- Hong Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with isolation trench liner
- Patent number 8,716,828
- Issue date May 6, 2014
- Advanced Micro Devices, Inc.
- Richard J. Carter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of integrating reverse eSiGe on NFET and SiGe channel on PF...
- Patent number 8,232,186
- Issue date Jul 31, 2012
- International Business Machines Corporation
- Eric C. T. Harley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with isolation trench liner
- Patent number 8,217,472
- Issue date Jul 10, 2012
- Advanced Micro Devices, Inc.
- Richard J. Carter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
PFET with tailored dielectric and related methods and integrated ci...
- Patent number 8,053,306
- Issue date Nov 8, 2011
- International Business Machines Corporation
- Rick Carter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a semiconductor device
- Patent number 8,048,791
- Issue date Nov 1, 2011
- GLOBALFOUNDRIES Inc.
- Michael Hargrove
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with isolation trench liner, and related fabri...
- Patent number 7,998,832
- Issue date Aug 16, 2011
- Advanced Micro Devices, Inc.
- Richard J. Carter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit having long and short channel metal gate devices...
- Patent number 7,902,599
- Issue date Mar 8, 2011
- Advanced Micro Devices, Inc.
- Richard J. Carter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit long and short channel metal gate devices and me...
- Patent number 7,723,192
- Issue date May 25, 2010
- Advanced Micro Devices, Inc.
- Richard J. Carter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for removing photoresist from semiconductor structures havi...
- Patent number 7,704,888
- Issue date Apr 27, 2010
- GlobalFoundries Inc.
- Richard J. Carter
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
DIFFERENTIAL SG/EG SPACER INTEGRATION WITH EQUIVALENT NFET/PFET SPA...
- Publication number 20200083346
- Publication date Mar 12, 2020
- GLOBALFOUNDRIES INC.
- George Robert MULFINGER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FDSOI SEMICONDUCTOR DEVICE WITH CONTACT ENHANCEMENT LAYER AND METHO...
- Publication number 20190148245
- Publication date May 16, 2019
- GLOBALFOUNDRIES INC.
- Peter Baars
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIFFERENTIAL SG/EG SPACER INTEGRATION WITH EQUIVALENT NFET/PFET SPA...
- Publication number 20180012973
- Publication date Jan 11, 2018
- GLOBALFOUNDRIES INC.
- George Robert MULFINGER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIFFERENTIAL SG/EG SPACER INTEGRATION WITH EQUIVALENT NFET/PFET SPA...
- Publication number 20170330953
- Publication date Nov 16, 2017
- GLOBALFOUNDRIES INC.
- George Robert MULFINGER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR PREVENTING OXIDATION DAMAGE DURING FINFET FABRICATION
- Publication number 20160211373
- Publication date Jul 21, 2016
- GLOBALFOUNDRIES INC.
- Hong Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL BLOCK LAYER FOR A FIN FIELD EFFECT TRANSISTOR DEVICE
- Publication number 20160163862
- Publication date Jun 9, 2016
- GLOBALFOUNDRIES INC.
- Zhenyu Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PREVENTING EPI DAMAGE FOR CAP NITRIDE STRIP SCHEME IN A FIN-SHAPED...
- Publication number 20160086952
- Publication date Mar 24, 2016
- GLOBALFOUNDRIES INC.
- HONG YU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
UNIFORM EXPOSED RAISED STRUCTURES FOR NON-PLANAR SEMICONDUCTOR DEVICES
- Publication number 20150380316
- Publication date Dec 31, 2015
- GLOBALFOUNDRIES INC.
- Hong YU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICES AND METHODS OF FORMING FINS AT TIGHT FIN PITCHES
- Publication number 20150287595
- Publication date Oct 8, 2015
- GLOBALFOUNDRIES INC.
- Andy WEI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT HAVING MULTIPLE THRESHOLD VOLTAGES
- Publication number 20150243563
- Publication date Aug 27, 2015
- GLOBALFOUNDRIES INC.
- Bongki LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATION METHOD FOR FABRICATION OF METAL GATE BASED MULTIPLE THR...
- Publication number 20150243652
- Publication date Aug 27, 2015
- GLOBALFOUNDRIES INC.
- Manoj JOSHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUITS WITH VARYING GATE STRUCTURES AND FABRICATION ME...
- Publication number 20150243658
- Publication date Aug 27, 2015
- GLOBALFOUNDRIES INC.
- Manoj JOSHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION METHODS FACILITATING INTEGRATION OF DIFFERENT DEVICE AR...
- Publication number 20150140756
- Publication date May 21, 2015
- GLOBALFOUNDRIES INC.
- Hong YU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MODIFIED, ETCH-RESISTANT GATE STRUCTURE(S) FACILITATING CIRCUIT FAB...
- Publication number 20150140751
- Publication date May 21, 2015
- GLOBALFOUNDRIES INC.
- Hong YU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICES AND METHODS OF FORMING FINS AT TIGHT FIN PITCHES
- Publication number 20150115418
- Publication date Apr 30, 2015
- GLOBALFOUNDRIES INC.
- Andy WEI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PREVENTING EPI DAMAGE FOR CAP NITRIDE STRIP SCHEME IN A FIN-SHAPED...
- Publication number 20150102414
- Publication date Apr 16, 2015
- GLOBAL FOUNDRIES Inc.
- Hong Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR PREVENTING OXIDATION DAMAGE DURING FINFET FABRICATION
- Publication number 20150099340
- Publication date Apr 9, 2015
- GLOBALFOUNDRIES INC.
- Hong Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OVERLAY PERFORMANCE FOR A FIN FIELD EFFECT TRANSISTOR DEVICE
- Publication number 20150076653
- Publication date Mar 19, 2015
- GLOBALFOUNDRIES INC.
- Zhenyu Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL BLOCK LAYER FOR A FIN FIELD EFFECT TRANSISTOR DEVICE
- Publication number 20150021695
- Publication date Jan 22, 2015
- GLOBALFOUNDRIES INC.
- Zhenyu Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF INTEGRATING REVERSE eSiGe ON NFET AND SiGe CHANNEL ON PF...
- Publication number 20120228716
- Publication date Sep 13, 2012
- International Business Machines Corporation
- Eric C. T. Harley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH ISOLATION TRENCH LINER
- Publication number 20120223399
- Publication date Sep 6, 2012
- Advanced Micro Devices, Inc.
- Richard J. Carter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH ISOLATION TRENCH LINER
- Publication number 20110260263
- Publication date Oct 27, 2011
- Advanced Micro Devices, Inc.
- Richard J. Carter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL OXIDE SEMICONDUCTOR DEVICES HAVING BURIED GATE CHANNELS AND M...
- Publication number 20100213553
- Publication date Aug 26, 2010
- Advanced Micro Devices, Inc.
- Michael HARGROVE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL OXIDE SEMICONDUCTOR DEVICES HAVING CAPPING LAYERS AND METHODS...
- Publication number 20100213555
- Publication date Aug 26, 2010
- Advanced Micro Devices, Inc.
- Michael HARGROVE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH IMPROVED CONTACT PLUGS, AND RELATED FABRI...
- Publication number 20100072623
- Publication date Mar 25, 2010
- Advanced Micro Devices, Inc.
- Christopher M. PRINDLE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH ISOLATION TRENCH LINER, AND RELATED FABRI...
- Publication number 20100052094
- Publication date Mar 4, 2010
- Advanced Micro Devices, Inc.
- Richard J. Carter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT HAVING LONG AND SHORT CHANNEL METAL GATE DEVICES...
- Publication number 20100044782
- Publication date Feb 25, 2010
- Advanced Micro Devices, Inc.
- Richard J. CARTER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF INTEGRATING REVERSE eSiGe ON NFET AND SiGe CHANNEL ON PF...
- Publication number 20090294801
- Publication date Dec 3, 2009
- International Business Machines Corporation
- Eric C. T. Harley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT LONG AND SHORT CHANNEL METAL GATE DEVICES AND ME...
- Publication number 20090230463
- Publication date Sep 17, 2009
- Advanced Micro Devices, Inc.
- Richard J. CARTER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE STACK STRUCTURE WITH OXYGEN GETTERING LAYER
- Publication number 20090152651
- Publication date Jun 18, 2009
- International Business Machines Corporation
- Huiming Bu
- H01 - BASIC ELECTRIC ELEMENTS

Richard J. Carter

Person

Patents Grantslast 30 patents

Differential SG/EG spacer integration with equivalent NFET/PFET spa...

Differential SG/EG spacer integration with equivalent NFET/PFET spa...

FDSOI semiconductor device with contact enhancement layer and metho...

Differential SG/EG spacer integration with equivalent NFET/PFET spa...

Integrated circuits with varying gate structures and fabrication me...

Fabrication methods facilitating integration of different device ar...

Epitaxial block layer for a fin field effect transistor device

Integration method for fabrication of metal gate based multiple thr...

Methods of removing fins so as to form isolation structures on prod...

Integrated circuit having multiple threshold voltages

Uniform exposed raised structures for non-planar semiconductor devices

Methods for preventing oxidation damage during FinFET fabrication

Epitaxial block layer for a fin field effect transistor device

Preventing EPI damage for cap nitride strip scheme in a Fin-shaped...

Overlay performance for a fin field effect transistor device

Devices and methods of forming fins at tight fin pitches

Modified, etch-resistant gate structure(s) facilitating circuit fab...

Semiconductor device with isolation trench liner

Methods of integrating reverse eSiGe on NFET and SiGe channel on PF...

Semiconductor device with isolation trench liner

PFET with tailored dielectric and related methods and integrated ci...

Method of forming a semiconductor device

Semiconductor device with isolation trench liner, and related fabri...

Integrated circuit having long and short channel metal gate devices...

Integrated circuit long and short channel metal gate devices and me...

Methods for removing photoresist from semiconductor structures havi...

Patents Applicationslast 30 patents

DIFFERENTIAL SG/EG SPACER INTEGRATION WITH EQUIVALENT NFET/PFET SPA...

FDSOI SEMICONDUCTOR DEVICE WITH CONTACT ENHANCEMENT LAYER AND METHO...

DIFFERENTIAL SG/EG SPACER INTEGRATION WITH EQUIVALENT NFET/PFET SPA...

DIFFERENTIAL SG/EG SPACER INTEGRATION WITH EQUIVALENT NFET/PFET SPA...

METHODS FOR PREVENTING OXIDATION DAMAGE DURING FINFET FABRICATION

EPITAXIAL BLOCK LAYER FOR A FIN FIELD EFFECT TRANSISTOR DEVICE

PREVENTING EPI DAMAGE FOR CAP NITRIDE STRIP SCHEME IN A FIN-SHAPED...

UNIFORM EXPOSED RAISED STRUCTURES FOR NON-PLANAR SEMICONDUCTOR DEVICES

DEVICES AND METHODS OF FORMING FINS AT TIGHT FIN PITCHES

INTEGRATED CIRCUIT HAVING MULTIPLE THRESHOLD VOLTAGES

INTEGRATION METHOD FOR FABRICATION OF METAL GATE BASED MULTIPLE THR...

INTEGRATED CIRCUITS WITH VARYING GATE STRUCTURES AND FABRICATION ME...

FABRICATION METHODS FACILITATING INTEGRATION OF DIFFERENT DEVICE AR...

MODIFIED, ETCH-RESISTANT GATE STRUCTURE(S) FACILITATING CIRCUIT FAB...

DEVICES AND METHODS OF FORMING FINS AT TIGHT FIN PITCHES

PREVENTING EPI DAMAGE FOR CAP NITRIDE STRIP SCHEME IN A FIN-SHAPED...

METHODS FOR PREVENTING OXIDATION DAMAGE DURING FINFET FABRICATION

OVERLAY PERFORMANCE FOR A FIN FIELD EFFECT TRANSISTOR DEVICE

EPITAXIAL BLOCK LAYER FOR A FIN FIELD EFFECT TRANSISTOR DEVICE

METHODS OF INTEGRATING REVERSE eSiGe ON NFET AND SiGe CHANNEL ON PF...

SEMICONDUCTOR DEVICE WITH ISOLATION TRENCH LINER

SEMICONDUCTOR DEVICE WITH ISOLATION TRENCH LINER

METAL OXIDE SEMICONDUCTOR DEVICES HAVING BURIED GATE CHANNELS AND M...

METAL OXIDE SEMICONDUCTOR DEVICES HAVING CAPPING LAYERS AND METHODS...

SEMICONDUCTOR DEVICE WITH IMPROVED CONTACT PLUGS, AND RELATED FABRI...

SEMICONDUCTOR DEVICE WITH ISOLATION TRENCH LINER, AND RELATED FABRI...

INTEGRATED CIRCUIT HAVING LONG AND SHORT CHANNEL METAL GATE DEVICES...

METHODS OF INTEGRATING REVERSE eSiGe ON NFET AND SiGe CHANNEL ON PF...

INTEGRATED CIRCUIT LONG AND SHORT CHANNEL METAL GATE DEVICES AND ME...

GATE STACK STRUCTURE WITH OXYGEN GETTERING LAYER