Richard Kenneth Oxland

Person

Leuven, BE

People

Patents Grantslast 30 patents

Information Patent Grant
Elongated semiconductor structure planarization
- Patent number 10,861,933
- Issue date Dec 8, 2020
- Taiwan Semiconductor Manufacturing Company , Ltd.
- Richard Kenneth Oxland
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Nanowire field effect transistor device having a replacement gate
- Patent number 10,522,621
- Issue date Dec 31, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd
- Richard Kenneth Oxland
- B82 - NANO-TECHNOLOGY
Information Patent Grant
FinFET with two fins on STI
- Patent number 10,510,853
- Issue date Dec 17, 2019
- Taiwan Semiconductor Manufacturing Company
- Georgios Vellianitis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanowire field effect transistor having a metal gate surrounding se...
- Patent number 10,276,660
- Issue date Apr 30, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd
- Richard Kenneth Oxland
- B82 - NANO-TECHNOLOGY
Information Patent Grant
FinFET with two fins on STI
- Patent number 10,164,031
- Issue date Dec 25, 2018
- Taiwan Semiconductor Manufacturing Company
- Georgios Vellianitis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterostructures for semiconductor devices and methods of forming t...
- Patent number 10,164,024
- Issue date Dec 25, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Martin Christopher Holland
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Elongated semiconductor structure planarization
- Patent number 10,121,858
- Issue date Nov 6, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Richard Kenneth Oxland
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical CMOS structure and method
- Patent number 10,049,946
- Issue date Aug 14, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Richard Kenneth Oxland
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating nanowire field effect transistor having a pre...
- Patent number 9,911,599
- Issue date Mar 6, 2018
- Taiwan Semiconductor Manufacturing Co., Ltd
- Richard Kenneth Oxland
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method for forming counterdoped semiconductor device comprising fir...
- Patent number 9,887,272
- Issue date Feb 6, 2018
- Taiwan Semiconductor Manufacturing Company Limited
- Richard Kenneth Oxland
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and FinFET devices
- Patent number 9,768,263
- Issue date Sep 19, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Martin Christopher Holland
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-V compound semiconductor device having dopant layer and method...
- Patent number 9,685,514
- Issue date Jun 20, 2017
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Richard Kenneth Oxland
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nickelide source/drain structures for CMOS transistors
- Patent number 9,680,027
- Issue date Jun 13, 2017
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Richard Kenneth Oxland
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Graded heterojunction nanowire device
- Patent number 9,590,084
- Issue date Mar 7, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Richard Kenneth Oxland
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming fins on the sidewalls of a sacrificial fin to form a FinFET
- Patent number 9,502,541
- Issue date Nov 22, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Georgios Vellianitis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical CMOS structure and method
- Patent number 9,472,551
- Issue date Oct 18, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Richard Kenneth Oxland
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanowire field effect transistor device having a replacement gate
- Patent number 9,472,618
- Issue date Oct 18, 2016
- Taiwan Semiconductor Manufacturing Company Limited
- Richard Kenneth Oxland
- B82 - NANO-TECHNOLOGY
Information Patent Grant
FinFET with channel backside passivation layer device and method
- Patent number 9,412,871
- Issue date Aug 9, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Gerben Doornbos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors, semiconductor devices, and methods of manufacture thereof
- Patent number 9,406,791
- Issue date Aug 2, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Gerben Doornbos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-V compound semiconductor device having metal contacts and metho...
- Patent number 9,391,153
- Issue date Jul 12, 2016
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Richard Kenneth Oxland
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterostructures for semiconductor devices and methods of forming t...
- Patent number 9,385,198
- Issue date Jul 5, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Martin Christopher Holland
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming semiconductor devices and FinFET devices, and Fi...
- Patent number 9,355,920
- Issue date May 31, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Martin Christopher Holland
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors, semiconductor devices, and methods of manufacture thereof
- Patent number 9,252,237
- Issue date Feb 2, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Gerben Doornbos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric semiconductor device
- Patent number 9,231,102
- Issue date Jan 5, 2016
- Taiwan Semiconductor Manufacturing Company Limited
- Richard Kenneth Oxland
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Barrier layer for FinFET channels
- Patent number 9,214,555
- Issue date Dec 15, 2015
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Richard Kenneth Oxland
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a nanowire field effect transistor device having...
- Patent number 9,136,332
- Issue date Sep 15, 2015
- Taiwan Semiconductor Manufacturing Company Limited
- Richard Kenneth Oxland
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-V compound semiconductor device having metal contacts and metho...
- Patent number 9,054,186
- Issue date Jun 9, 2015
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Richard Kenneth Oxland
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET with a buried semiconductor material between two fins
- Patent number 8,987,835
- Issue date Mar 24, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Georgios Vellianitis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-V compound semiconductor device having metal contacts and metho...
- Patent number 8,866,195
- Issue date Oct 21, 2014
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Richard Kenneth Oxland
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
NANOWIRE FIELD EFFECT TRANSISTOR DEVICE HAVING A REPLACEMENT GATE
- Publication number 20190229186
- Publication date Jul 25, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Richard Kenneth OXLAND
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FinFET with Two Fins on STI
- Publication number 20190131413
- Publication date May 2, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Georgios Vellianitis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELONGATED SEMICONDUCTOR STRUCTURE PLANARIZATION
- Publication number 20190074355
- Publication date Mar 7, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Richard Kenneth Oxland
- B82 - NANO-TECHNOLOGY
Information Patent Application
NANOWIRE FIELD EFFECT TRANSISTOR DEVICE HAVING A REPLACEMENT GATE
- Publication number 20180174821
- Publication date Jun 21, 2018
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Richard Kenneth OXLAND
- B82 - NANO-TECHNOLOGY
Information Patent Application
Elongated Semiconductor Structure Planarization
- Publication number 20170125518
- Publication date May 4, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Richard Kenneth Oxland
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN STRUCTURE FOR A FINFET DEVICE
- Publication number 20170069728
- Publication date Mar 9, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Georgios Vellianitis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical CMOS Structure and Method
- Publication number 20170033021
- Publication date Feb 2, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Richard Kenneth Oxland
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nanowire Field Effect Transistor Device Having a Replacement Gate
- Publication number 20170025538
- Publication date Jan 26, 2017
- Taiwan Semiconductor Manufacturing Company Limited
- RICHARD KENNETH OXLAND
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Heterostructures for Semiconductor Devices and Methods of Forming t...
- Publication number 20160300911
- Publication date Oct 13, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Martin Christopher Holland
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL CMOS STRUCTURE AND METHOD
- Publication number 20160240533
- Publication date Aug 18, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Richard Kenneth Oxland
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND FINFET DEVICES
- Publication number 20160225858
- Publication date Aug 4, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Martin Christopher Holland
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GRADED HETEROJUNCTION NANOWIRE DEVICE
- Publication number 20160149001
- Publication date May 26, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Richard Kenneth Oxland
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistors, Semiconductor Devices, and Methods of Manufacture Thereof
- Publication number 20160118487
- Publication date Apr 28, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Gerben Doornbos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COUNTERDOPED SEMICONDUCTOR DEVICE
- Publication number 20160118475
- Publication date Apr 28, 2016
- Taiwan Semiconductor Manufacturing Company Limited
- Richard Kenneth Oxland
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-V COMPOUND SEMICONDUCTOR DEVICE HAVING DOPANT LAYER AND METHOD...
- Publication number 20160049477
- Publication date Feb 18, 2016
- Taiwan Semiconductor Manufacturing Co., LTD
- Richard Kenneth OXLAND
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REPLACEMENT GATE NANOWIRE DEVICE
- Publication number 20160027871
- Publication date Jan 28, 2016
- Taiwan Semiconductor Manufacturing Company Limited
- RICHARD KENNETH OXLAND
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of Forming Semiconductor Devices and FinFET Devices, and Fi...
- Publication number 20150255545
- Publication date Sep 10, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Martin Christopher Holland
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-V COMPOUND SEMICONDUCTOR DEVICE HAVING METAL CONTACTS AND METHO...
- Publication number 20150243750
- Publication date Aug 27, 2015
- Taiwan Semiconductor Manufacturing Co., LTD
- Richard Kenneth OXLAND
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REPLACEMENT GATE NANOWIRE DEVICE
- Publication number 20150162403
- Publication date Jun 11, 2015
- Taiwan Semiconductor Manufacturing Company Limited
- RICHARD KENNETH OXLAND
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fin Structure for a FinFET Device
- Publication number 20150132920
- Publication date May 14, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Georgios Vellianitis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ASYMMETRIC SEMICONDUCTOR DEVICE
- Publication number 20150061005
- Publication date Mar 5, 2015
- Taiwan Semiconductor Manufacturing Company Limited
- Richard Kenneth Oxland
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-V COMPOUND SEMICONDUCTOR DEVICE HAVING METAL CONTACTS AND METHO...
- Publication number 20150014792
- Publication date Jan 15, 2015
- Taiwan Semiconductor Manufacturing Co., LTD
- Richard Kenneth OXLAND
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Barrier Layer for FinFET Channels
- Publication number 20140264592
- Publication date Sep 18, 2014
- Taiwan Semiconductor Manufacturing Co. Ltd.
- Richard Kenneth Oxland
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Heterostructures for Semiconductor Devices and Methods of Forming t...
- Publication number 20140264438
- Publication date Sep 18, 2014
- Martin Christopher Holland
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FinFET with Channel Backside Passivation Layer Device and Method
- Publication number 20140252478
- Publication date Sep 11, 2014
- Gerben Doornbos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistors, Semiconductor Devices, and Methods of Manufacture Thereof
- Publication number 20140061722
- Publication date Mar 6, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Gerben Doornbos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-V COMPOUND SEMICONDUCTOR DEVICE HAVING METAL CONTACTS AND METHO...
- Publication number 20140008699
- Publication date Jan 9, 2014
- Taiwan Semiconductor Manufacturing Co., LTD
- Richard Kenneth OXLAND
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-V COMPOUND SEMICONDUCTOR DEVICE HAVING DOPANT LAYER AND METHOD...
- Publication number 20130299895
- Publication date Nov 14, 2013
- Taiwan Semiconductor Manufacturing Co., LTD
- Richard Kenneth OXLAND
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fin Structure for a FinFET Device
- Publication number 20130256759
- Publication date Oct 3, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Georgios Vellianitis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NICKELIDE SOURCE/DRAIN STRUCTURES FOR CMOS TRANSISTORS
- Publication number 20130234205
- Publication date Sep 12, 2013
- Taiwan Semiconductor Manufacturing Co. Ltd.
- Richard Kenneth Oxland
- H01 - BASIC ELECTRIC ELEMENTS

Richard Kenneth Oxland

Person

Patents Grantslast 30 patents

Elongated semiconductor structure planarization

Nanowire field effect transistor device having a replacement gate

FinFET with two fins on STI

Nanowire field effect transistor having a metal gate surrounding se...

FinFET with two fins on STI

Heterostructures for semiconductor devices and methods of forming t...

Elongated semiconductor structure planarization

Vertical CMOS structure and method

Method of fabricating nanowire field effect transistor having a pre...

Method for forming counterdoped semiconductor device comprising fir...

Semiconductor devices and FinFET devices

III-V compound semiconductor device having dopant layer and method...

Nickelide source/drain structures for CMOS transistors

Graded heterojunction nanowire device

Forming fins on the sidewalls of a sacrificial fin to form a FinFET

Vertical CMOS structure and method

Nanowire field effect transistor device having a replacement gate

FinFET with channel backside passivation layer device and method

Transistors, semiconductor devices, and methods of manufacture thereof

III-V compound semiconductor device having metal contacts and metho...

Heterostructures for semiconductor devices and methods of forming t...

Methods of forming semiconductor devices and FinFET devices, and Fi...

Transistors, semiconductor devices, and methods of manufacture thereof

Asymmetric semiconductor device

Barrier layer for FinFET channels

Method for forming a nanowire field effect transistor device having...

III-V compound semiconductor device having metal contacts and metho...

FinFET with a buried semiconductor material between two fins

III-V compound semiconductor device having metal contacts and metho...

Patents Applicationslast 30 patents

NANOWIRE FIELD EFFECT TRANSISTOR DEVICE HAVING A REPLACEMENT GATE

FinFET with Two Fins on STI

ELONGATED SEMICONDUCTOR STRUCTURE PLANARIZATION

NANOWIRE FIELD EFFECT TRANSISTOR DEVICE HAVING A REPLACEMENT GATE

Elongated Semiconductor Structure Planarization

FIN STRUCTURE FOR A FINFET DEVICE

Vertical CMOS Structure and Method

Nanowire Field Effect Transistor Device Having a Replacement Gate

Heterostructures for Semiconductor Devices and Methods of Forming t...

VERTICAL CMOS STRUCTURE AND METHOD

SEMICONDUCTOR DEVICES AND FINFET DEVICES

GRADED HETEROJUNCTION NANOWIRE DEVICE

Transistors, Semiconductor Devices, and Methods of Manufacture Thereof

COUNTERDOPED SEMICONDUCTOR DEVICE

III-V COMPOUND SEMICONDUCTOR DEVICE HAVING DOPANT LAYER AND METHOD...

REPLACEMENT GATE NANOWIRE DEVICE

Methods of Forming Semiconductor Devices and FinFET Devices, and Fi...

III-V COMPOUND SEMICONDUCTOR DEVICE HAVING METAL CONTACTS AND METHO...

REPLACEMENT GATE NANOWIRE DEVICE

Fin Structure for a FinFET Device

ASYMMETRIC SEMICONDUCTOR DEVICE

III-V COMPOUND SEMICONDUCTOR DEVICE HAVING METAL CONTACTS AND METHO...

Barrier Layer for FinFET Channels

Heterostructures for Semiconductor Devices and Methods of Forming t...

FinFET with Channel Backside Passivation Layer Device and Method

Transistors, Semiconductor Devices, and Methods of Manufacture Thereof

III-V COMPOUND SEMICONDUCTOR DEVICE HAVING METAL CONTACTS AND METHO...

III-V COMPOUND SEMICONDUCTOR DEVICE HAVING DOPANT LAYER AND METHOD...

Fin Structure for a FinFET Device

NICKELIDE SOURCE/DRAIN STRUCTURES FOR CMOS TRANSISTORS