Richard L. Woodin

Person

Austin, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
Wide bandgap device in parallel with a device that has a lower aval...
- Patent number 8,357,976
- Issue date Jan 22, 2013
- Fairchild Semiconductor Corporation
- Joseph A. Yedinak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Rugged semiconductor device architecture
- Patent number 8,124,981
- Issue date Feb 28, 2012
- Fairchild Semiconductor Corporation
- Christopher L. Rexer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact method for thin silicon carbide epitaxial layer and semicon...
- Patent number RE42423
- Issue date Jun 7, 2011
- Fairchild Semiconductor Corporation
- Martin E. Kordesch
- 257 - Active solid-state devices
Information Patent Grant
Wide bandgap device in parallel with a device that has a lower aval...
- Patent number 7,859,057
- Issue date Dec 28, 2010
- Fairchild Semiconductor Corporation
- Joseph A. Yedinak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact method for thin silicon carbide epitaxial layer and semicon...
- Patent number 7,638,820
- Issue date Dec 29, 2009
- Fairchild Semiconductor Corporation
- Martin E. Kordesch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and device with durable contact on silicon carbide
- Patent number 7,618,884
- Issue date Nov 17, 2009
- Fairchild Semiconductor Corporation
- William F. Seng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wide bandgap device in parallel with a device that has a lower aval...
- Patent number 7,586,156
- Issue date Sep 8, 2009
- Fairchild Semiconductor Corporation
- Joseph A. Yedinak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Uniform contact
- Patent number 7,411,219
- Issue date Aug 12, 2008
- Fairchild Semiconductor Corporation
- Richard L. Woodin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and device with durable contact on silicon carbide
- Patent number 7,411,218
- Issue date Aug 12, 2008
- Fairchild Semiconductor Corporation
- William F. Seng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact method for thin silicon carbide epitaxial layer and semicon...
- Patent number 7,132,701
- Issue date Nov 7, 2006
- Fairchild Semiconductor Corporation
- Martin E. Kordesch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Uniform contact
- Patent number 6,955,978
- Issue date Oct 18, 2005
- Fairchild Semiconductor Corporation
- Richard L. Woodin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gated electron field emitter having an interlayer
- Patent number 6,664,721
- Issue date Dec 16, 2003
- Extreme Devices Incorporated
- Keith D. Jamison
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
LOW TEMPERATURE, LONG TERM ANNEALING OF NICKEL CONTACTS TO LOWER IN...
- Publication number 20110318920
- Publication date Dec 29, 2011
- Fairchild Semiconductor Corporation
- William F. Seng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WIDE BANDGAP DEVICE IN PARALLEL WITH A DEVICE THAT HAS A LOWER AVAL...
- Publication number 20110089432
- Publication date Apr 21, 2011
- Fairchild Semiconductor Corporation
- Joseph A. Yedinak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WIDE BANDGAP DEVICE IN PARALLEL WITH A DEVICE THAT HAS A LOWER AVAL...
- Publication number 20090315040
- Publication date Dec 24, 2009
- Joseph A. Yedinak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RUGGED SEMICONDUCTOR DEVICE ARCHITECTURE
- Publication number 20090302327
- Publication date Dec 10, 2009
- Christopher L. Rexer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND DEVICE WITH DURABLE CONTACT ON SILICON CARBIDE
- Publication number 20080227275
- Publication date Sep 18, 2008
- Fairchild Semiconductor Corporation
- William F. Seng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AVALANCHE PROTECTION FOR WIDE BANDGAP DEVICES
- Publication number 20080042143
- Publication date Feb 21, 2008
- Joseph A. Yedinak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW TEMPERATURE, LONG TERM ANNEALING OF NICKEL CONTACTS TO LOWER IN...
- Publication number 20080014764
- Publication date Jan 17, 2008
- Fairchild Semiconductor Corporation
- William F. Seng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT METHOD FOR THIN SILICON CARBIDE EPITAXIAL LAYER AND SEMICON...
- Publication number 20070117366
- Publication date May 24, 2007
- Martin E. Kordesch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Uniform contact
- Publication number 20050269574
- Publication date Dec 8, 2005
- Richard L. Woodin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and device with durable contact on silicon carbide
- Publication number 20050269573
- Publication date Dec 8, 2005
- William F. Seng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low temperature, long term annealing of nickel contacts to lower in...
- Publication number 20050215041
- Publication date Sep 29, 2005
- William F. Seng
- H01 - BASIC ELECTRIC ELEMENTS

Richard L. Woodin

Person

Patents Grantslast 30 patents

Wide bandgap device in parallel with a device that has a lower aval...

Rugged semiconductor device architecture

Contact method for thin silicon carbide epitaxial layer and semicon...

Wide bandgap device in parallel with a device that has a lower aval...

Contact method for thin silicon carbide epitaxial layer and semicon...

Method and device with durable contact on silicon carbide

Wide bandgap device in parallel with a device that has a lower aval...

Uniform contact

Method and device with durable contact on silicon carbide

Contact method for thin silicon carbide epitaxial layer and semicon...

Uniform contact

Gated electron field emitter having an interlayer

Patents Applicationslast 30 patents

LOW TEMPERATURE, LONG TERM ANNEALING OF NICKEL CONTACTS TO LOWER IN...

WIDE BANDGAP DEVICE IN PARALLEL WITH A DEVICE THAT HAS A LOWER AVAL...

WIDE BANDGAP DEVICE IN PARALLEL WITH A DEVICE THAT HAS A LOWER AVAL...

RUGGED SEMICONDUCTOR DEVICE ARCHITECTURE

METHOD AND DEVICE WITH DURABLE CONTACT ON SILICON CARBIDE

AVALANCHE PROTECTION FOR WIDE BANDGAP DEVICES

LOW TEMPERATURE, LONG TERM ANNEALING OF NICKEL CONTACTS TO LOWER IN...

CONTACT METHOD FOR THIN SILICON CARBIDE EPITAXIAL LAYER AND SEMICON...

Uniform contact

Method and device with durable contact on silicon carbide

Low temperature, long term annealing of nickel contacts to lower in...