Richard LAI

Person

Redondo Beach, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Embedded hydrogen inhibitors for semiconductor field effect transis...
- Patent number 9,577,083
- Issue date Feb 21, 2017
- Northrop Grumman Systems Corporation
- Yeong-Chang Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monolithically integrated active electronic circuit and waveguide s...
- Patent number 8,686,813
- Issue date Apr 1, 2014
- Northrop Grumman Systems Corporation
- William Roland Deal
- G02 - OPTICS
Information Patent Grant
High electron mobility transistor semiconductor device and fabricat...
- Patent number 7,709,860
- Issue date May 4, 2010
- Northrop Grumman Space & Mission Systems Corp.
- Linh Dang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor semiconductor device and fabricat...
- Patent number 7,582,518
- Issue date Sep 1, 2009
- Northrop Grumman Space & Mission Systems Corp.
- Linh Dang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor (HEMT) structure with refractory...
- Patent number 7,411,226
- Issue date Aug 12, 2008
- Northrop Grumman Corporation
- Yeong-Chang Choug
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric, optimized common-source bi-directional amplifier
- Patent number 7,239,852
- Issue date Jul 3, 2007
- Northrop Grumman Corporation
- Jeffrey Ming-Jer Yang
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Grant
Wafer thinning techniques
- Patent number 6,764,573
- Issue date Jul 20, 2004
- Northrop Grumman Corporation
- Richard Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wafer adhesive for semiconductor dry etch applications
- Patent number 6,551,905
- Issue date Apr 22, 2003
- TRW Inc.
- Michael E. Barsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for forming a large area, high gate current HEMT diode
- Patent number 6,524,899
- Issue date Feb 25, 2003
- TRW Inc.
- Ronald W. Grundbacher
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhancement mode device
- Patent number 6,452,221
- Issue date Sep 17, 2002
- TRW Inc.
- Richard Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single-layer dielectric structure with rounded corners, and circuit...
- Patent number 6,396,679
- Issue date May 28, 2002
- TRW Inc.
- Ronald W. Grundbacher
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for determining etch depth
- Patent number 6,383,826
- Issue date May 7, 2002
- TRW Inc.
- Michael E. Barsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor with double sided airbridge
- Patent number 6,201,283
- Issue date Mar 13, 2001
- TRW Inc.
- Richard Lai
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
PASSIVE MILLIMETER WAVE IMAGE CONVERTER
- Publication number 20150122994
- Publication date May 7, 2015
- Northrop Grumman Systems Corporation
- Mikio Larry YUJIRI
- G01 - MEASURING TESTING
Information Patent Application
Monolithically integrated active electronic circuit and waveguide s...
- Publication number 20110050371
- Publication date Mar 3, 2011
- William Roland Deal
- G02 - OPTICS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR SEMICONDUCTOR DEVICE AND FABRICAT...
- Publication number 20090206369
- Publication date Aug 20, 2009
- Northrop Grumman Space & Mission Systems Corp.
- Linh Dang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High electron mobility transistor semiconductor device and fabricat...
- Publication number 20080111157
- Publication date May 15, 2008
- Northrop Grumman Corporation
- Linh Dang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High electron mobility transistor (HEMT) structure with refractory...
- Publication number 20060244009
- Publication date Nov 2, 2006
- Northrop Grumman Corporation
- Yeong-Chang Choug
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Asymmetric, optimized common-source bi-directional amplifier
- Publication number 20050026571
- Publication date Feb 3, 2005
- Northrop Grumman Space & Mission Systems Corporation
- Jeffrey Ming-Jer Yang
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Application
Wafer thinning techniques
- Publication number 20030071009
- Publication date Apr 17, 2003
- Richard Lai
- H01 - BASIC ELECTRIC ELEMENTS

Richard LAI

Person

Patents Grantslast 30 patents

Embedded hydrogen inhibitors for semiconductor field effect transis...

Monolithically integrated active electronic circuit and waveguide s...

High electron mobility transistor semiconductor device and fabricat...

High electron mobility transistor semiconductor device and fabricat...

High electron mobility transistor (HEMT) structure with refractory...

Asymmetric, optimized common-source bi-directional amplifier

Wafer thinning techniques

Wafer adhesive for semiconductor dry etch applications

Process for forming a large area, high gate current HEMT diode

Enhancement mode device

Single-layer dielectric structure with rounded corners, and circuit...

Method for determining etch depth

Field effect transistor with double sided airbridge

Patents Applicationslast 30 patents

PASSIVE MILLIMETER WAVE IMAGE CONVERTER

Monolithically integrated active electronic circuit and waveguide s...

HIGH ELECTRON MOBILITY TRANSISTOR SEMICONDUCTOR DEVICE AND FABRICAT...

High electron mobility transistor semiconductor device and fabricat...

High electron mobility transistor (HEMT) structure with refractory...

Asymmetric, optimized common-source bi-directional amplifier

Wafer thinning techniques