Richard W. Foote

Person

Kennedale, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
Trench DMOS transistor with reduced gate-to-drain capacitance
- Patent number 10,741,687
- Issue date Aug 11, 2020
- Texas Instruments Incorporated
- Yaojian Leng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench DMOS transistor with reduced gate-to-drain capacitance
- Patent number 9,716,167
- Issue date Jul 25, 2017
- National Semiconductor Corporation
- Yaojian Leng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ohmic contact schemes for group III-V devices having a two-dimensio...
- Patent number 8,946,780
- Issue date Feb 3, 2015
- National Semiconductor Corporation
- Sandeep R. Bahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
DMOS transistor with a slanted super junction drift structure
- Patent number 8,878,295
- Issue date Nov 4, 2014
- National Semiconductor Corporation
- Peter J. Hopper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
DMOS Transistor with a cavity that lies below the drift region
- Patent number 8,524,548
- Issue date Sep 3, 2013
- National Semiconductor Corporation
- William French
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing bipolar transistors
- Patent number 8,298,901
- Issue date Oct 30, 2012
- National Semiconductor Corporation
- Richard W. Foote
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor apparatus comprising bipolar transistors and metal ox...
- Patent number 7,939,402
- Issue date May 10, 2011
- National Semiconductor Corporation
- Richard W. Foote
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System and method for applying a pre-gate plasma etch in a semicond...
- Patent number 7,879,694
- Issue date Feb 1, 2011
- National Semiconductor Corporation
- Richard W. Foote
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System and method for increasing breakdown voltage of LOCOS isolate...
- Patent number 7,867,871
- Issue date Jan 11, 2011
- National Semiconductor Corporation
- Richard W. Foote
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor apparatus comprising bipolar transistors and metal ox...
- Patent number 7,772,653
- Issue date Aug 10, 2010
- National Semiconductor Corporation
- Richard W. Foote
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System and method for providing improved trench isolation of semico...
- Patent number 7,745,902
- Issue date Jun 29, 2010
- National Semiconductor Corporation
- Richard W. Foote
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System and method for providing a uniform oxide layer over a laser...
- Patent number 7,589,397
- Issue date Sep 15, 2009
- National Semiconductor Corporation
- Richard W. Foote
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System and method for providing a deep connection to a substrate or...
- Patent number 7,547,618
- Issue date Jun 16, 2009
- National Semiconductor Corporation
- Richard W. Foote
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for providing a deep connection to substrate or buried layer...
- Patent number 7,348,639
- Issue date Mar 25, 2008
- National Semiconductor Corporation
- Richard W. Foote
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System and method for providing a self heating adjustable TiSi2 res...
- Patent number 7,332,794
- Issue date Feb 19, 2008
- National Semiconductor Corporation
- Richard W. Foote
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System and method for providing improved trench isolation of semico...
- Patent number 7,291,541
- Issue date Nov 6, 2007
- National Semiconductor Corporation
- Richard W. Foote
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for providing a deep connection to a substrate or buried lay...
- Patent number 7,262,111
- Issue date Aug 28, 2007
- National Semiconductor Corporation
- Richard W. Foote
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System and method for providing a uniform oxide layer over a laser...
- Patent number 7,238,620
- Issue date Jul 3, 2007
- National Semiconductor Corporation
- Richard W. Foote
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System and method for selectively modifying a wet etch rate in a la...
- Patent number 7,172,973
- Issue date Feb 6, 2007
- National Semiconductor Corporation
- Richard W. Foote
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System and method for providing a self heating adjustable TiSi2 res...
- Patent number 7,166,518
- Issue date Jan 23, 2007
- National Semiconductor Corporation
- Richard W. Foote
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System and method for providing a variable breakdown bipolar transi...
- Patent number 7,053,464
- Issue date May 30, 2006
- National Semiconductor Corporation
- Richard W. Foote
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
TRENCH DMOS TRANSISTOR WITH REDUCED GATE-TO-DRAIN CAPACITANCE
- Publication number 20170309743
- Publication date Oct 26, 2017
- National Semiconductor Corporation
- Yaojian Leng
- H01 - BASIC ELECTRIC ELEMENTS

Richard W. Foote

Person

Patents Grantslast 30 patents

Trench DMOS transistor with reduced gate-to-drain capacitance

Trench DMOS transistor with reduced gate-to-drain capacitance

Ohmic contact schemes for group III-V devices having a two-dimensio...

DMOS transistor with a slanted super junction drift structure

DMOS Transistor with a cavity that lies below the drift region

Method for manufacturing bipolar transistors

Semiconductor apparatus comprising bipolar transistors and metal ox...

System and method for applying a pre-gate plasma etch in a semicond...

System and method for increasing breakdown voltage of LOCOS isolate...

Semiconductor apparatus comprising bipolar transistors and metal ox...

System and method for providing improved trench isolation of semico...

System and method for providing a uniform oxide layer over a laser...

System and method for providing a deep connection to a substrate or...

Method for providing a deep connection to substrate or buried layer...

System and method for providing a self heating adjustable TiSi2 res...

System and method for providing improved trench isolation of semico...

Method for providing a deep connection to a substrate or buried lay...

System and method for providing a uniform oxide layer over a laser...

System and method for selectively modifying a wet etch rate in a la...

System and method for providing a self heating adjustable TiSi2 res...

System and method for providing a variable breakdown bipolar transi...

Patents Applicationslast 30 patents

TRENCH DMOS TRANSISTOR WITH REDUCED GATE-TO-DRAIN CAPACITANCE