Richard W. Gregor

Person

Allentown, PA, US

People

Patents Grantslast 30 patents

Information Patent Grant
MOS transistor and method of manufacture
- Patent number 7,151,059
- Issue date Dec 19, 2006
- Agere Systems Inc.
- Samir Chaudhry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Capacitor for a semiconductor device and method for fabrication the...
- Patent number 6,847,077
- Issue date Jan 25, 2005
- Agere Systems, INC
- Sylvia W. Thomas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device free of LLD regions
- Patent number 6,740,912
- Issue date May 25, 2004
- Agere Systems Inc.
- Samir Chaudhry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Damascene structure having a metal-oxide-metal capacitor associated...
- Patent number 6,680,542
- Issue date Jan 20, 2004
- Agere Systems Inc.
- Gerald W. Gibson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-layered metal silicide resistor for Si Ic's
- Patent number 6,359,339
- Issue date Mar 19, 2002
- Agere Systems Guardian Corp.
- Richard W. Gregor
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Increased cycle specification for floating-gate and method of manuf...
- Patent number 6,252,270
- Issue date Jun 26, 2001
- Agere Systems Guardian Corp.
- Richard W. Gregor
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deuterated direlectric and polysilicon film-based semiconductor dev...
- Patent number 6,023,093
- Issue date Feb 8, 2000
- Lucent Technologies Inc.
- Richard W. Gregor
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Floating gate avalanche injection MOS transistors with high K diele...
- Patent number 6,008,091
- Issue date Dec 28, 1999
- Lucent Technologies Inc.
- Richard William Gregor
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of reducing dielectric damage from plasma etch charging
- Patent number 5,843,827
- Issue date Dec 1, 1998
- Lucent Technologies Inc.
- Richard William Gregor
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Flash EEPROM fabrication process that uses a selective wet chemical...
- Patent number 5,312,781
- Issue date May 17, 1994
- AT&T Bell Laboratories
- Richard W. Gregor
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of semiconductor integrated circuit manufacturing which incl...
- Patent number 5,110,756
- Issue date May 5, 1992
- AT&T Bell Laboratories
- Richard W. Gregor
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
MOS transistor and method of manufacture
- Publication number 20040150014
- Publication date Aug 5, 2004
- Samir Chaudhry
- C30 - CRYSTAL GROWTH
Information Patent Application
Capacitor for a semiconductor device and method for fabrication the...
- Publication number 20030234416
- Publication date Dec 25, 2003
- Sylvia W. Thomas
- H01 - BASIC ELECTRIC ELEMENTS

Richard W. Gregor

Person

Patents Grantslast 30 patents

MOS transistor and method of manufacture

Capacitor for a semiconductor device and method for fabrication the...

Semiconductor device free of LLD regions

Damascene structure having a metal-oxide-metal capacitor associated...

Multi-layered metal silicide resistor for Si Ic&#x00027;s

Increased cycle specification for floating-gate and method of manuf...

Deuterated direlectric and polysilicon film-based semiconductor dev...

Floating gate avalanche injection MOS transistors with high K diele...

Method of reducing dielectric damage from plasma etch charging

Flash EEPROM fabrication process that uses a selective wet chemical...

Method of semiconductor integrated circuit manufacturing which incl...

Patents Applicationslast 30 patents

MOS transistor and method of manufacture

Capacitor for a semiconductor device and method for fabrication the...

Multi-layered metal silicide resistor for Si Ic's